Metal/semiconductor junction Schottky diode optical device using a distortion grown layer

• US 5,488,231 A
• Filed: 12/09/1994
• Issued: 01/30/1996
• Est. Priority Date: 11/23/1994
• Status: Expired due to Fees

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Choi, Young-Wan, Kwon, O-Kyun, Lee, El-Hang
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/352,628
• Time in Patent Office: 417 Days
• Field of Search: 257/21, 257/17, 257/15, 257/184, 257/432, 257/453, 257/454, 257/449, 257/455, 257/456, 257/18
• US Class Current: 257/17
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type

Abstract

A metal/semiconductor junction Schottky diode optical device using a distortion grown layer is described. A plurality of GaAs mirror and AlAs mirror layers are periodically grown on a semi-insulating GaAs substrate. An n+ or p+ semiconductor layer is formed on the GaAs mirror and AlAs mirror layers. A GaAs buffer layer is formed on the semiconductor layer to grow a Schottky metal layer serving as an electrode and a mirror. A multiple quantum well structure having an electro-optical absorption characteristic is positioned between the semiconductor layer and Schottky metal layer, for constructing a diode with the metal layer/multiple quantum well structure. At least a part of the mirror layers and diode are formed with a layer in order to have resonance and non-resonance conditions between the metal layer and mirror layers. The substrate on which the diode is formed has an opposite side formed with an optical non-reflective layer.

Claims

1. A metal/semiconductor junction Schottky diode optical device formed on a structure comprising:

a plurality of GaAs mirror and AlAs mirror layers grown on a semi-insulating GaAs substrate, one of an n+ and a p+ semiconductor layer formed on said GaAs mirror and AlAs mirror layers, a GaAs buffer layer formed on said one of said n+ and p+ semiconductor layer providing a Schottky metal layer serving as an electrode and a mirror, and a multiple quantum well structure having an electro-optical absorption characteristic, formed between said one of said n+ and p+ semiconductor layer and Schottky metal layer, to provide a diode with said multiple quantum well structure.

2. A metal/semiconductor junction Schottky diode optical device as claimed in claim 1, wherein at least a part of said mirror layers and diode are formed with a layer in order to have resonance and non-resonance conditions between said metal layer and mirror layers.

3. A metal/semiconductor junction Schottky diode optical device as claimed in claim 1, wherein said substrate on which said diode is formed has an opposite side formed with an optical non-reflective layer.