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Metal/semiconductor junction Schottky diode optical device using a distortion grown layer

  • US 5,488,231 A
  • Filed: 12/09/1994
  • Issued: 01/30/1996
  • Est. Priority Date: 11/23/1994
  • Status: Expired due to Fees
First Claim
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1. A metal/semiconductor junction Schottky diode optical device formed on a structure comprising:

  • a plurality of GaAs mirror and AlAs mirror layers grown on a semi-insulating GaAs substrate, one of an n+ and a p+ semiconductor layer formed on said GaAs mirror and AlAs mirror layers, a GaAs buffer layer formed on said one of said n+ and p+ semiconductor layer providing a Schottky metal layer serving as an electrode and a mirror, and a multiple quantum well structure having an electro-optical absorption characteristic, formed between said one of said n+ and p+ semiconductor layer and Schottky metal layer, to provide a diode with said multiple quantum well structure.

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