SOI MOSFET with floating gate
First Claim
1. A semiconductor device comprisinga semiconductor substrate,a thin film single-crystalline semiconductor layer with an insulating layer interposed therebetween, the insulating layer containing a floating electroconductive layer buried therein,a MOSFET comprising source and drain regions in the thin film single-crystalline semiconductor layer,a gate insulating film on the thin film single-crystalline semiconductor layer,a polysilicon gate on the gate insulating film,a second thin film single-crystalline semiconductor layer on the insulating layer and insulated from the MOSFET,a tunnel insulating film on the second thin film single-crystalline semiconductor layer,a doped polysilicon layer on the tunnel insulating layer,a second metal electrode layer on the doped polysilicon layer, anda metal electrode layer connected to the semiconductor substrate acting as an electrode for applying a voltage to store electric charges in the floating electroconductive layer,the thin film single-crystalline semiconductor layer having a channel region at a portion corresponding to the polysilicon gate,the floating electroconductive layer being located at least at a position corresponding to the channel region of the MOSFET and being electrically insulated,wherein the second thin film single-crystalline semiconductor layer is connected to the floating electroconductive layer, whereby the electric charge is introduced in the floating electroconductive layer by applying a voltage between the metal electrode layer and the second metal electrode layer so that electrons are injected from the doped polysilicon layer into the floating electroconductive layer through the tunnel insulating film.
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Accused Products
Abstract
A semiconductor device of an SOIMOSFET comprising a semiconductor substrate, an insulating layer and a thin film single-crystalline semiconductor layer, the insulating layer containing a floating electrically conductive layer buried therein at a portion corresponding to the channel, the floating electrically conductive layer being electrically insulated from the other portions, the semiconductor device further comprising an electrode adjacent to the floating electrically conductive layer for applying a voltage by which an electric charge is injected into and stored in the floating electroconductive layer.
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Citations
10 Claims
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1. A semiconductor device comprising
a semiconductor substrate, a thin film single-crystalline semiconductor layer with an insulating layer interposed therebetween, the insulating layer containing a floating electroconductive layer buried therein, a MOSFET comprising source and drain regions in the thin film single-crystalline semiconductor layer, a gate insulating film on the thin film single-crystalline semiconductor layer, a polysilicon gate on the gate insulating film, a second thin film single-crystalline semiconductor layer on the insulating layer and insulated from the MOSFET, a tunnel insulating film on the second thin film single-crystalline semiconductor layer, a doped polysilicon layer on the tunnel insulating layer, a second metal electrode layer on the doped polysilicon layer, and a metal electrode layer connected to the semiconductor substrate acting as an electrode for applying a voltage to store electric charges in the floating electroconductive layer, the thin film single-crystalline semiconductor layer having a channel region at a portion corresponding to the polysilicon gate, the floating electroconductive layer being located at least at a position corresponding to the channel region of the MOSFET and being electrically insulated, wherein the second thin film single-crystalline semiconductor layer is connected to the floating electroconductive layer, whereby the electric charge is introduced in the floating electroconductive layer by applying a voltage between the metal electrode layer and the second metal electrode layer so that electrons are injected from the doped polysilicon layer into the floating electroconductive layer through the tunnel insulating film.
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4. A semiconductor device comprising:
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a semiconductor substrate; a thin film single-crystalline semiconductor layer with a first insulating layer interposed therebetween; a plurality of MOSFETs comprising source and drain regions in the thin film single-crystalline semiconductor layer; a gate insulating film on the thin film single-crystalline semiconductor layer; a polysilicon gate on the gate insulating film; a floating electroconductive layer; and a metal electrode layer connected to the semiconductor substrate for applying such a voltage to store electric charges in the floating electroconductive layer, the thin film single-crystalline semiconductor layer having a channel region at a portion corresponding to the polysilicon gate, and the floating electroconductive layer being under the first insulating layer at least at a position corresponding to the channel region of one of the plurality of MOSFETs and a second insulating layer underlying the floating electroconductive layer, the floating electroconductive layer being by the first and second insulating layers and being electrically insulated wherein the floating electroconductive layer is common to more than one of the plurality of MOSFETs. - View Dependent Claims (5, 6)
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7. A semiconductor device comprising:
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a semiconductor substrate, a thin film single-crystalline semiconductor layer with an insulating layer interposed therebetween, a plurality of MOSFETs each comprising source and drain regions in the thin film single-crystalline semiconductor layer, a gate insulating film on the thin film single-crystalline semiconductor layer, and a polysilicon gate on the gate insulating film, and an electrode, the thin film single-crystalline semiconductor layer having a channel region at a portion corresponding to the polysilicon gate, the insulating layer containing a floating electroconductive layer buried therein, the floating electroconductive layer being located at least at a position corresponding to the channel region of more than one said plurality of MOSFETs and being electrically insulated, and the electrode being connected to the semiconductor substrate for applying a voltage to store electric charges in the floating electroconductive layer. - View Dependent Claims (8, 9)
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10. A semiconductor device comprising:
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a semiconductor substrate; a thin film single-crystalline semiconductor layer with a first insulating layer interposed therebetween; a MOSFET comprising source and drain regions in the thin film single-crystalline semiconductor layer; a gate insulating film on the thin film single-crystalline semiconductor layer; a polysilicon gate on the gate insulating film; a floating electroconductive layer; a metal electrode layer connected to the semiconductor substrate for applying such a voltage to store electric charges in the floating electroconductive layer; a second thin film single-crystalline semiconductor layer on the first insulating layer; a tunnel insulating film on the second thin film single-crystalline semiconductor layer; a doped polysilicon layer on the tunnel insulating layer and a second metal electrode layer on the doped polysilicon layer, the thin film single-crystalline semiconductor layer having a channel region at a portion corresponding to the polysilicon gate, and the floating electroconductive layer being under the first insulating layer at least at a position corresponding to the channel region of the MOSFET and a second insulating layer underlying the floating electroconductive layer, the floating electroconductive layer being buried by the first and second insulating layers and being electrically insulated, the second thin film single-crystalline semiconductor layer being insulated from the MOSFET and connected to the floating electroconductive layer, by which the electric charge is introduced in the floating electroconductive layer by applying a voltage between the metal electrode layer and the second metal layer so that the electric charge is injected from the doped polysilicon layer into the floating electroconductive layer through the tunnel insulating film.
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Specification