Ultrasonic transducer and method for using same

• US 5,488,954 A
• Filed: 09/09/1994
• Issued: 02/06/1996
• Est. Priority Date: 09/09/1994
• Status: Expired due to Fees

• Current Assignee: Georgia Tech Research Corporation (University System of Georgia), Medical College of Georgia (University System of Georgia)
• Original Assignee: Georgia Tech Research Corporation (University System of Georgia), Medical College of Georgia (University System of Georgia)
• Inventors: Sleva, Michael Z., Hunt, William D., Briggs, Ronald D., Connuck, David M.
• Primary Examiner(s): JAWORSKI, FRANCIS J
• Application Number:
  US08/303,638
• Time in Patent Office: 515 Days
• Field of Search: 128/662.03, 128/662.06, 310/334, 310/336, 310/338, 310/339, 310/380
• US Class Current: 600/459
• CPC Class Codes: B06B 1/0685 on the back only of piezoelectric elements
• CPC Class Codes: B06B 1/0692 with a continuous electrode on one side and a plurality of electrodes on the other side

Abstract

An improved ultrasonic transducer fabricated on a silicon base has a piezoelectric layer of polyvinylidene fluoride-trfluroethylene copolymer. The piezoelectric layer is sandwiched between two conductive electrodes, all of which are supported on a dielectric layer on top of the silicon base. At least one of the electrodes forms a Fresnel zone plate to focus the ultrasonic signals from the transducers. To improve the performance of the transducer, the silicon base behind the active area is removed, leaving the dielectric layer as a membrane to support the electrodes and the piezoelectric layer. The resulting void in the silicon base is filled with an acoustically matched backing, such as an epoxy, to enhance the wideband performance of the transducer. The transducer is especially suited for characterizing anatomical structures or features requiring very high resolution.

Claims

1. A wide bandwidth ultrasonic transducer capable of both transmitting and receiving signals, comprising:

a semiconductor base having a first layer which is heavily doped, a second layer which is lightly doped, and a void formed therein;

a dielectric layer disposed on said first layer of said semiconductor base and spanning said void in said semiconductor base such that said dielectric layer has a first surface in contact with said first layer of said semiconductor base;

a first conductive electrode disposed on a second surface of said dielectric layer and having a first surface in contact with said second surface of said dielectric layer, said conducting electrode having a second surface opposite said first surface of said first conductive layer;

a piezoelectric film disposed on said second surface of said first conductive electrode layer and having a first surface in contact with said second surface of said first conductive electrode, said piezoelectric film having a second surface opposite said first surface;

a second conductive electrode disposed on said second surface of said piezoelectric film and having a first surface in contact with said second surface of said piezoelectric film, said second conductive layer having a second surface opposite said first surface;

a Fresnel zone plate pattern in at least one of said first conductive electrode and said second conductive electrode for focusing ultrasound waves emitting from said transducer; and

backing means disposed in said void, said backing means having an acoustic impedance substantially matched to said piezoelectric layer.

2. The wide bandwidth ultrasonic transducer of claim 1, wherein said semiconductor base comprises silicon.

3. The wide bandwidth ultrasonic transducer of claim 1, wherein said piezoelectric film comprises PVDF-TrFE.

4. The wide bandwidth ultrasonic transducer of claim 1, wherein said semiconductor base comprises integrated electronic circuitry associated with said wideband ultrasonic transducer.

5. The wide bandwidth transducer of claim 1, wherein said void in said semiconductor base extends through said first layer of said semiconductor base.

6. The wide bandwidth transducer of claim 1, wherein said void in said semiconductor base extends through second layer of said semiconductor base.

7. The wide bandwidth transducer of claim 1, wherein said backing means absorbs substantially all the energy transmitted toward said semiconductor base when said transducer is electrically excited.

8. The wide bandwidth transducer of claim 1, wherein said backing means comprises a filling disposed in said void, said filling having an acoustic impedance between 1.0 to 4.5 MRayls.

9. The wide bandwidth transducer of claim 1, wherein said backing means is an epoxy.

10. The wide bandwidth transducer of claim 1, wherein said backing means is a metal loaded epoxy.

11. A wide bandwidth ultrasonic transducer comprising:

a piezoelectric layer having a first and second surface;

a first conductive electrode attached to said piezoelectric layer, said first conductive electrode having a first surface in contact with said first surface of said piezoelectric layer, said first conductive layer having a second surface opposite said first surface;

a second conductive electrode attached to said second surface of said piezoelectric layer;

focusing means in at least one of said first conductive electrode and said second conductive electrode;

a dielectric layer attached to said first conductive electrode, said dielectric layer having a first surface in contact with said second surface of said first conductive electrode, said dielectric layer having a second surface opposite said first surface;

a semiconductive base layer attached to said dielectric layer, said semiconductor base layer having a first surface in contact with said second surface of said dielectric layer, said semiconductor base layer having a second surface opposite said first surface;

said semiconductor base layer having a void in said second surface, said void aligned with a portion of said piezoelectric layer in contact with said first conductive layer on said first surface of said piezoelectric layer and said second conductive electrode on said second surface as a piezoelectric layer; and

said void filled with a backing means having an acoustic impedance substantially matched to said piezoelectric layer.