Measuring film etching uniformity during a chemical etching process

• US 5,489,361 A
• Filed: 12/13/1994
• Issued: 02/06/1996
• Est. Priority Date: 06/30/1994
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Wong, Justin W., Barbee, Steven G., Hsiao, Yiping, Li, Leping, Ratzlaff, Eugene H., Heinz, Tony F.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/354,567
• Time in Patent Office: 420 Days
• Field of Search: 156/626, 156/627, 156/657, 156/662, 156/345, 156/626.1, 156/627.1, 156/657.1, 156/662.1, 204/129.2, 216/84
• US Class Current: 438/8
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: G01N 2291/0231 Composite or layered materials
• CPC Class Codes: G01N 2291/2694 Wings or other aircraft parts
• CPC Class Codes: G01N 29/348 with frequency characteristics, e.g. single frequency signals, chirp signals measuring frequency of mechanical vibrations or acoustic waves in general G01H1/06, G01H3/04; measuring frequency or analysing frequency spectra G01R23/00
• CPC Class Codes: G01N 29/42 by frequency filtering or by tuning to resonant frequency
• CPC Class Codes: G03F 7/3028 characterised by means for on-wafer monitoring of the processing
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine a film etching uniformity value. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station, and are useful for film deposition process quality control.

Claims

1. A method for contactless, real-time, in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath, said method comprising the steps of:

a) providing two conductive electrodes in the wet chemical bath, wherein said two electrodes are proximate to but not in contact with the at least one wafer;

b) monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a change in the electrical characteristic is indicative of a state of the etching process;

c) detecting a minimum value of said electrical characteristic during etching;

d) determining a time of the minimum value of said electrical characteristic;

e) detecting a maximum value of said electrical characteristic during etching;

f) determining a time of the maximum value of said electrical characteristic; and

g) comparing the time of said minimum value and the time of said maximum value and determining a film etching uniformity value therefrom.

2. The method of claim 1, wherein the monitoring of an electrical characteristic in step (b) comprises monitoring impedance and further wherein the change in the electrical characteristic comprises a change in impedance.

3. The method of claim 2, wherein the monitoring of an electrical characteristic in step (b) comprises monitoring impedance and further wherein the change in the electrical characteristic comprises a change in a component of impedance, wherein said component is selected from the group consisting of admittance, reactance, resistance, capacitance, and inductance.

4. The method of claim 1, wherein an etching end point is determined in real time in response to said film etching uniformity value and an etching starting point.

5. The method of claim 4, further comprising the step of controlling the etching process in response to the etching end point, wherein the end point is determined in real time.