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Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility

  • US 5,489,792 A
  • Filed: 04/07/1994
  • Issued: 02/06/1996
  • Est. Priority Date: 04/07/1994
  • Status: Expired due to Term
First Claim
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1. A field effect transistor formed in a semiconductor material layer on an insulating layer formed in a supporting substrate comprisinga first region in said semiconductor material and having a first conductivity type, said first layer functioning as a source region,a second region in said semiconductor material layer having said first conductivity type and spaced from said first region, said second region functioning as a drain region,a third region in said semiconductor material layer underlying said first region abutting said insulating layer and separating said first region from said insulating layer, said third region having a second conductivity type and functioning as a body contact for charge carriers,a fourth region in said semiconductor material layer between said first region and said second region and functioning as a channel interconnecting said first region and said second region,a conductor overlying said fourth region and insulatively spaced therefrom and functioning as a gate contact,a source contact to said first region, and a drain contact to said second region.

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