SOI actuators and microsensors

• US 5,490,034 A
• Filed: 03/05/1993
• Issued: 02/06/1996
• Est. Priority Date: 01/13/1989
• Status: Expired due to Fees

• Current Assignee: Kopin Corporation
• Original Assignee: Kopin Corporation
• Inventors: Zavracky, Paul M., Morrison, Richard H. Jr.
• Primary Examiner(s): Ledynh, Bot L.
• Application Number:
  US08/027,249
• Time in Patent Office: 1,068 Days
• Field of Search: 361/280, 361/283.1, 361/283.2, 361/283.4, 29/25.41, 29/25.42, 177/210 C, 73/718, 73/715, 73/517 R
• US Class Current: 361/283.4
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: Y10T 29/43 Electric condenser making

Abstract

The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which may incorporate electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

Claims

1. A pressure sensor comprising:

an insulating layer formed over a substrate, the insulating layer having a cavity formed therein;

a flexible diaphragm positioned over the cavity, the diaphragm being formed in a layer of single crystal or essentially single crystal silicon material positioned over a portion of the insulating layer and having a silicon-on-insulator structure; and

an insulating clamp structure extending through the silicon layer and the insulating layer along a peripheral portion of the diaphragm, the clamp structure being positioned adjacent to the cavity and attached to the diaphragm for supporting the diaphragm over the cavity, the clamp structure being formed to support the diaphragm over the cavity.

2. The pressure sensor of claim 1 wherein the clamp structure comprises silicon nitride.

3. The pressure sensor of claim 1 wherein the clamp structure comprises polysilicon.

4. The pressure sensor of claim 1 wherein the insulating layer comprises silicon oxide.

5. The pressure sensor of claim 1 wherein the support substrate comprises a semiconductor material.

6. The pressure sensor of claim 5 wherein the semiconductor material is silicon.

7. The pressure sensor of claim 1 further comprising channels formed in the silicon layer adjacent to a peripheral portion of the diaphragm and in the insulating layer adjacent to the cavity, wherein the clamp is positioned in a channel adjacent to the cavity.

8. The pressure sensor of claim 1 wherein a portion of the cavity adjacent to the substrate has a cross-sectional area which is larger than a cross-sectional area of the diaphragm.

9. A pressure sensor comprising:

a semiconductor substrate;

a layer of insulating material formed on the substrate;

a layer of single crystal or essentially single crystal silicon material formed over the insulating layer and having a silicon-on-insulator structure;

a flexible diaphragm formed in the silicon layer and supported over a cavity formed in the insulating layer;

a channel formed through the layer of silicon material adjacent a peripheral portion of the diaphragm and into the insulating layer adjacent to the cavity; and

a clamp structure formed in the channel, the clamp structure being attached to the diaphragm for supporting the diaphragm over the cavity and being formed of an electrical insulating material for electrically isolating the diaphragm from the substrate.

10. The pressure sensor of claim 9 wherein the clamp structure comprises silicon nitride.

11. The pressure sensor of claim 9 wherein the clamp structure comprises polysilicon.

12. The pressure sensor of claim 9 wherein the layer of insulating material comprises silicon oxide.

13. The pressure sensor of claim 9 wherein the semiconductor material is silicon.

14. The pressure sensor of claim 9 wherein a portion of the cavity adjacent to the substrate has a cross-sectional area which is larger than a cross-sectional area of the diaphragm.

15. A method of making a pressure sensor comprising the steps of:

forming an insulating layer on a substrate;

forming a layer of single crystal silicon over the insulating layer to provide a silicon-on-insulator structure;

forming a diaphragm positioned in or on the layer of single crystal silicon;

forming a clamp system extending through the silicon layer and the insulating layer along a peripheral portion of the diaphragm, the clamp system being attached to the diaphragm for supporting the diaphragm over a cavity to be formed in the insulator; and

removing a portion of the insulating layer under the diaphragm to form the cavity such that the diaphragm can be displaced.

16. The method of step 15 wherein the step of forming a clamp system further comprises forming regions of silicon nitride.

17. The method of step 15 wherein the step of forming a clamp system further comprises forming regions of polysilicon.

18. An electromechanical device comprising:

a supporting substrate;

an insulating layer formed on the substrate, the insulating layer having a cavity formed therein;

a micromechanical structure positioned over the cavity, the micromechanical structure formed in a layer of single crystal or essentially single crystal silicon material positioned on the insulating layer and having a silicon-on-insulator structure; and

an insulating clamp extending through the silicon layer and the insulating layer at a supporting location of the micromechanical structure, the clamp being formed of an electrical insulator for electrically isolating the micromechanical structure from the substrate.

19. The electromechanical device of claim 18 wherein the clamp comprises silicon nitride.

20. The electromechanical device of claim 18 wherein the micromechanical structure is a bridge.

21. The electromechanical device of claim 18 wherein the micromechanical structure is a beam.

22. The electromechanical device of claim 21 wherein the beam is a cantilever beam.

23. The electromechanical device of claim 18 wherein the insulating layer comprises silicon oxide.

24. The electromechanical device of claim 18 wherein the support substrate comprises a semiconductor material.

25. The electromechanical device of claim 24 wherein the support substrate is silicon.