Direct bonding of copper composites to ceramics
First Claim
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1. A process for direct bonding a ceramic to a copper composite, said process comprising the steps of:
- heating a copper composite substrate to a first temperature at which copper diffuses to a region adjacent the surface of said substrate,oxidizing said substrate after heating,placing a ceramic member in contact with the resulting oxidized substrate in an inert atmosphere at a second temperature sufficient to produce a copper-copper oxide eutectic at the interface between said oxidized substrate and said ceramic member, said eutectic, upon cooling, forming a bond between said ceramic and said copper composite.
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Abstract
A ceramic member (52) is direct-bonded to a copper composite substrate (58) by heating to diffuse copper to the surface (56) of the copper composite substrate, oxidizing the surface of the copper composite substrate following heating, placing a ceramic member in contact with the resulting oxidized substrate, and forming a copper-copper oxide eutectic (54) at the interface between the copper composite substrate and the ceramic member by heating. The eutectic, upon cooling, forms a bond between the copper composite and the ceramic.
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Citations
10 Claims
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1. A process for direct bonding a ceramic to a copper composite, said process comprising the steps of:
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heating a copper composite substrate to a first temperature at which copper diffuses to a region adjacent the surface of said substrate, oxidizing said substrate after heating, placing a ceramic member in contact with the resulting oxidized substrate in an inert atmosphere at a second temperature sufficient to produce a copper-copper oxide eutectic at the interface between said oxidized substrate and said ceramic member, said eutectic, upon cooling, forming a bond between said ceramic and said copper composite. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A process for direct bonding a ceramic member to a copper-tungsten substrate, said process comprising the steps of:
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heating a copper-tungsten substrate to a temperature of about 1200°
C.,oxidizing said substrate after heating, placing a ceramic member in contact with the resulting oxidized copper-tungsten substrate in an inert atmosphere at a temperature in the range of about 1065°
C. to 1083°
C. to produce a copper-copper oxide eutectic at the interface between said oxidized copper-tungsten substrate and said ceramic member,cooling to form a bond between said ceramic member and said copper-tungsten substrate. - View Dependent Claims (10)
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Specification