Charged particle detection device and charged particle radiation apparatus

• US 5,491,339 A
• Filed: 09/19/1994
• Issued: 02/13/1996
• Est. Priority Date: 09/21/1993
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Okumura, Katsuya, Mitsui, Tadashi, Harada, Nozomu, Miyoshi, Motosuke, Sekine, Makoto, Okano, Haruo
• Primary Examiner(s): Anderson, Bruce C.
• Application Number:
  US08/308,420
• Time in Patent Office: 512 Days
• Field of Search: 250/310, 250/370.14, 250/370.01, 250/397, 257/429, 257/430
• US Class Current: 250/310
• CPC Class Codes: H01J 37/244 Detectors; Associated components or circuits therefor

Abstract

According to this invention, there is provided a charged particle detection device including a semiconductor substrate, an insulating film formed on the semiconductor substrate, an electrode formed on the insulating film, a member for forming a potential well, which is constituted by a depletion layer, near a surface of the semiconductor substrate under the electrode, a member for sweeping, into the semiconductor substrate, charges which are generated in the semiconductor substrate by charged particles incident from the electrode and are stored in the potential well, and a member for detecting signal charges generated by the charged particles swept into the semiconductor substrate.

Claims

1. A charge particle detection device comprising:

a semiconductor substrate;

an insulating film formed on said semiconductor substrate;

an electrode formed on said insulating film;

means for forming a potential well, which is constituted by a depletion layer in a first region of said semiconductor substrate, near a surface of said semiconductor substrate under said electrode;

means for sweeping, into a second region of said semiconductor substrate, charges which are generated in said semiconductor substrate by charged particles incident through said electrode and that are stored in said potential well; and

means for detecting electrical signals generated by the charged particles swept into said second region of said semiconductor substrate.

2. A device according to claim 1, wherein said means for forming a potential well and said means for sweeping are electrically connected to said electrode, and operate as means for applying a voltage to said electrode.

3. A device according to claim 1, wherein said electrode is made of a material selected from the group consisting of aluminum, titanium nitride, chromium, carbon, and silicon.

4. A device according to claim 1, wherein a carbon thin film is formed on a surface of said electrode.

5. A device according to claim 1, wherein a region of a conductivity type different from a conductivity type of said semiconductor substrate is formed at a position closer to said electrode than a region having said conductivity type of said semiconductor substrate.

6. A device according to claim 1, wherein said charged particles are electrons.

7. A charged particle detection device comprising:

a semiconductor substrate having a hole for causing charged particles to pass therethrough;

a first insulating film formed on said semiconductor substrate;

an electrode formed on said first insulating film;

means for forming a potential well, which is constituted by a depletion layer in a first region of said semiconductor substrate, near a surface of said semiconductor substrate under said electrode;

means for sweeping, into a second region of said semiconductor substrate, charges which are generated in said semiconductor substrate by charged particles incident through said electrode and that are stored in said potential well;

means for detecting electrical signals generated by the charged particles swept into said second region of said semiconductor substrate; and

a conductive thin film formed on an inner wall of said hole through a second insulating film and electrically connected to said electrode.

8. A device according to claim 7, wherein said means for forming a potential well and said means for sweeping are electrically connected to said electrode, and operate as means for applying a voltage to said electrode.

9. A device according to claim 7, wherein a region of a conductivity type different from a conductivity type of said semiconductor substrate is formed at a position closer to said electrode than a region having said conductivity type of said semiconductor substrate.

10. A device according to claim 7, wherein said conductive thin film is made of a material selected from the group consisting of gold, platinum, nickel and titanium.

11. A charged particle radiation apparatus comprising:

a radiation device for radiating charged particles onto a sample; and

a charged particle detection unit for detecting charged particles reflected by said sample,

said charged particle detection comprising;

a semiconductor substrate,

an insulating film formed on said semiconductor substrate,

an electrode formed on said insulating film,

means for forming a potential well, which is constituted by a depletion layer in a first region of said semiconductor substrate, near a surface of said semiconductor substrate under said electrode,

means for sweeping, into a second region of said semiconductor substrate, charges which are generated in said semiconductor substrate by charged particles incident from said electrode and that are stored in said potential well, and

means for detecting electrical signals generated by the charged particles swept into said second region of said semiconductor substrate.

12. An apparatus according to claim 11, wherein said means for forming a potential well and said means for sweeping are electrically connected to said electrode, and operate as means for applying a voltage to said electrode.

13. An apparatus according to claim 11, wherein a region of a conductivity type different from a conductivity type of said semiconductor substrate is formed at a position closer to said electrode than a region having said conductivity type of said semiconductor substrate.

14. An apparatus according to claim 11, wherein holes for causing charged particles to pass therethrough are formed in said semiconductor substrate, said insulating film, and said electrode.

15. An apparatus according to claim 14, further comprising a conductive thin film formed on inner walls of said holes through an insulating film.

16. An apparatus according to claim 11, wherein charged particles radiated onto said sample are a linear beam.

17. An apparatus according to claim 16, wherein said charged particle detection unit comprises a plurality of charged particle detection units which are linearly connected to each other.

18. An apparatus according to claim 11, said charged particles are electrons.

19. A charged particle detection device comprising:

a semiconductor substrate;

an insulating film formed on said semiconductor substrate;

an electrode formed on said insulating film;

means for forming a potential well, which is constituted by a depletion layer in a first region of said semiconductor substrate, near a surface of said semiconductor substrate under said electrode, by applying a first voltage to said electrode;

means for sweeping, into a second region of said semiconductor substrate, charges which are generated in said semiconductor substrate by electrons incident from said electrode and that are stored in said potential well, by applying a second voltage that is lower than said first voltage to said electrode; and

means for detecting electrical signals generated by the electrons swept into said second region of said semiconductor substrate.

20. A device according to claim 19, wherein said electrode is made of a material selected from the group consisting of aluminum, titanium nitride, chromium, carbon, and silicon.

21. A device according to claim 19, wherein a carbon thin film is formed on a surface of said electrode.

22. A device according to claim 19, wherein a region of a conductivity type that is different from a conductivity type of said semiconductor substrate is formed at a position closer to said electrode than a region having said conductivity type of said semiconductor substrate.