Light emitting diode and process for fabricating the same

• US 5,491,350 A
• Filed: 06/30/1994
• Issued: 02/13/1996
• Est. Priority Date: 06/30/1993
• Status: Expired due to Fees

• Current Assignee: Hitachi Cable Limited (Proterial Ltd.)
• Original Assignee: Hitachi Cable Limited (Proterial Ltd.)
• Inventors: Unno, Tsunehiro, Konno, Taichiro
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US08/268,644
• Time in Patent Office: 593 Days
• Field of Search: 257/99, 257/95, 257/81
• US Class Current: 257/99
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Disclosed is a light emitting diode in which double hetero-structure epitaxial layers defining a light emitting portion are connected with a substrate by a mesa portion, and a cavity layer is formed by providing a mesa portion between the substrate and an adjoining layer of the epitaxial layers. Resin may be put into the cavity layer. Also provided is a process for fabricating a light emitting diode wherein the process comprises the steps of growing an AlGaAs layer with high mixed crystal ratio as a sacrificial layer, growing the epitaxial layers on the sacrificial layer to be connected with the mesa portion, and dissolving and removing the sacrificial layer to form the cavity layer. Light is reflected at the interface between a clad layer and the cavity layer or the resin put into the cavity layer, as a consequence, a light-emitting output can be improved. A thick AlGaAs layer with high AlAs mixed crystal ratio for the substrate is not required to be provided, so that the fabrication becomes easy, and uniformity in characteristics can be obtained.

Claims

1. A light emitting diode which is formed with a plurality of epitaxial layers defining a light emitting portion on a substrate, comprising:

a column-shaped mesa portion providing cavities on a surface of said substrate, said epitaxial layers being partially connected with said substrate by said column-shaped mesa portion; and

a cavity layer formed between said substrate and said epitaxial layers at said cavities except for said column-shaped mesa portion, said cavity layer reflecting light emitted from said light emitting portion to said substrate to propagate light in a direction away from said substrate.

2. A light emitting diode, according to claim 1, wherein said substrate is GaAs, and said epitaxial layers are GaAlAs.

3. A light emitting diode, according to claim 1 wherein resin is put into said cavity layer.

4. A light emitting diode which is formed with a plurality of epitaxial layers defining a light emitting portion on a substrate, comprising:

an outwardly protruding portion on a back surface of said epitaxial layers, said epitaxial layers being partially connected with said substrate by said outwardly protruding portion; and

a cavity layer formed between said substrate and said epitaxial layers except for said outwardly protruding portion, said cavity layer reflecting light emitted from said light emitting portion to said substrate to propagate light in a direction away from said substrate.

5. A light emitting diode, according to claim 4, wherein said substrate is GaAs, and said epitaxial layers are GaAls.

6. A light emitting diode, according to claim 4, wherein resin is put into said cavity layer.

7. A light emitting diode which is formed with a plurality of epitaxial layers defining a light emitting portion on a substrate, comprising:

a column-shaped mesa portion on a surface of said substrate;

an outwardly protruding portion on a back surface of said epitaxial layers;

said eptiaxial layers being partially connected with said substrate by said column-shaped mesa portion and said outwardly protruding portion; and

a cavity layer formed between said substrate and said epitaxial layers except for said column-shaped mesa portion and said outwardly protruding portion, said cavity layer reflecting light emitted from said light emitting portion to said substrate to propagate light in a direction away from said substrate.

8. A light emitting diode, according to claim 7, wherein said substrate is GaAs, and said epitaxial layers are GaAls.

9. A light emitting diode, according to claim 7, wherein resin is put into said cavity layer.

10. A light emitting diode, comprising:

a semiconductor substrate of a first conductivity type;

a clad layer grown on a top surface of said semiconductor substrate, said clad layer being of said first conductivity type;

an active layer grown on said clad layer, said active layer being of said first conductivity type;

a window layer grown on said active layer, said window layer being of a second conductivity type;

a first electrode provided on a back surface of said semiconductor substrate, said back surface being opposite to said top surface; and

a second electrode provided on a top surface of said window layer, said top surface of said window layer being opposite to a back surface facing said active layer;

wherein a plurality of cavities are provided at an interface between said semiconductor substrate and said clad layer, said interface reflecting light emitted by said active layer to said substrate to propagate light in a direction away from said substrate.

11. A light emitting diode, according to claim 10, wherein each of said plurality of cavities is semicircular.

12. A light emitting diode, according to claim 10, wherein each of said plurality of cavities is rectangular.