Strain-compensated multiple quantum well laser structures

• US 5,491,710 A
• Filed: 05/05/1994
• Issued: 02/13/1996
• Est. Priority Date: 05/05/1994
• Status: Expired due to Term

• Current Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Original Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Inventors: Lo, Yu-Hwa
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): McNutt, Robert
• Application Number:
  US08/238,500
• Time in Patent Office: 649 Days
• Field of Search: 372/96, 372/102, 372/45, 372/46, 372/43, 372/92, 257/18
• US Class Current: 372/45.011
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18375 based on metal reflectors
• CPC Class Codes: H01S 5/18394 Apertures, e.g. defined by the shape of the upper electrode
• CPC Class Codes: H01S 5/187 using Bragg reflection
• CPC Class Codes: H01S 5/3054 p-doping
• CPC Class Codes: H01S 5/3406 including strain compensation
• CPC Class Codes: H01S 5/34306 emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
• CPC Class Codes: H01S 5/3434 with a well layer comprising at least both As and P as V-compounds
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

Semiconductor laser structures utilize strain-compensated multiple quantum wells as the laser gain medium to greatly increase the gain and substantially reduce mirror reflectivity constraints in long wavelength (1.3 and 1.55 μm) surface emitting, and other, lasers. The strain-compensated multiple quantum well structures include a plurality of quantum well barrier layer pairs with each quantum well layer being placed under strain and each barrier layer being placed under an equal and opposite strain so that the net overall strain on the quantum well structure is zero. As a result, it can be made as thick as necessary for the lasers to operate efficiently at long wavelengths. Each of the quantum well layers are also preferably p-doped to further increase the optical gain. Another embodiment of the present invention employs the strain-compensated multiple quantum wells in combination with grating-coupling in a surface or edge emitting laser. The gratings are formed on top of the multiple quantum well structure to simplify the fabrication process, and are provided with strong light coupling characteristics to reduce the overall width of the laser structure to as low as 10 microns.

Claims

1. A semiconductor vertical cavity surface emitting laser structure comprising:

a) a substrate;

b) a laser body on said substrate;

c) a strain-compensated multiple quantum well structure in said laser body and forming a gain medium for said laser structure; and

d) first and second reflective means positioned below and above, respectively, said strain-compensated multiple quantum well structure for forming a vertical cavity for said laser structure in said laser body.

2. The laser structure of claim 1, wherein said strain-compensated multiple quantum well structure includes a plurality of p-doped quantum well layers.

3. The laser structure of claim 1, wherein said multiple quantum well structure includes a plurality of strained quantum well layers alternating with a plurality of oppositely strained barrier layers.

4. The laser structure of claim 1, wherein said laser structure is a single frequency laser operating at a wavelength of at least approximately 1.3 μ

m.

5. The laser structure of claim 1, wherein said first and second reflective means further comprise:

i) a first reflective mirror layer between said substrate and said laser body; and

ii) a second reflective mirror layer on top of said laser body.

6. The laser structure of claim 5, further including an index matching layer between said laser body and said second reflective mirror.

7. The laser structure of claim 1, wherein said first reflective means comprises a semiconductor Bragg mirror, and said second reflective means comprises a dielectric mirror.

8. The laser structure of claim 1, wherein said first and second reflective means comprise first and second dielectric mirrors.

9. The laser structure of claim 1, wherein said first reflective means comprises a bonded Bragg mirror disposed between said substrate and said laser body.

10. The laser structure of claim 9, wherein said substrate is formed from GaAs, and said bonded Bragg mirror is formed from GaAs/AlAs.