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Strain-compensated multiple quantum well laser structures

  • US 5,491,710 A
  • Filed: 05/05/1994
  • Issued: 02/13/1996
  • Est. Priority Date: 05/05/1994
  • Status: Expired due to Term
First Claim
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1. A semiconductor vertical cavity surface emitting laser structure comprising:

  • a) a substrate;

    b) a laser body on said substrate;

    c) a strain-compensated multiple quantum well structure in said laser body and forming a gain medium for said laser structure; and

    d) first and second reflective means positioned below and above, respectively, said strain-compensated multiple quantum well structure for forming a vertical cavity for said laser structure in said laser body.

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