Integration of surface emitting laser and photodiode for monitoring power output of surface emitting laser

• US 5,491,712 A
• Filed: 10/31/1994
• Issued: 02/13/1996
• Est. Priority Date: 10/31/1994
• Status: Expired due to Fees

• Current Assignee: Hewlett-Packard Company (HP Inc.)
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Yang, Long, Lin, Hong, Tan, Michael R. T., Wang, Shih-Yuan
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): Song, Yisun
• Application Number:
  US08/332,231
• Time in Patent Office: 470 Days
• Field of Search: 372/43, 372/50, 372/96, 257/84, 257/85, 257/81
• US Class Current: 372/50.21
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/0264 for monitoring the laser-output
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/2027 Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment

Abstract

The present invention provides a structure and method for integrating a photodiode and surface emitting laser on a substrate which minimizes both process complexity and exposure of epitaxial layers. In a first embodiment, a photodiode structure is integrated with the surface emitting laser simply by adding a separate Schottky contact to the surface of the SEL. In a second embodiment, a photodiode structure is integrated with the surface emitting laser by positioning a current isolation region between the photodiode and the SEL. The current isolation region should extend into a first mirror region but not into the light generation region of the active region so that the light generation region of the SEL is optically coupled to the light absorption region of the photodiode.

Claims

1. An integrated light emitting device and photodetecting device comprising:

an active region including a light generation region for generating light in response to light passing therethrough, the active region having a first side and a second opposite side, the light generation region emitting light in a first direction through a first surface;

a second mirror region having a first side and a second opposite side, the second mirror region for reflecting light towards the light generation region, the second mirror region being located on the first side of the active region;

a first mirror region having a first side and a second opposite side, the first mirror region for reflecting light towards the light generation region, the first side of the first mirror region being located on the second side of the active region;

a substrate having a first side and a second opposite side, the first side of the substrate being located on the second side of the first mirror region; and

a Schottky contact for detecting light emitted in the first direction, the Schottky contact being formed on the first surface.

2. The integrated light emitting device and photodetecting device recited in claim 1, wherein the Schottky barrier of the Schottky contact is less than the photon energy of the light emitted in the first direction.

3. The integrated light emitting device and photodetecting device recited in claim 1 wherein the first surface is the second side of the second mirror region.

4. The integrated light emitting device and photodetecting device recited in claim 1 wherein the first surface is the second side of the substrate.

5. The integrated light emitting device and photodetecting device recited in claim 1 wherein the Schottky contact is comprised of a metal, the metal being at least partially transparent to the light emitted in the first direction.

6. The integrated light emitting device and photodetecting device recited in claim 1 further including a first ohmic contact formed on the first surface, wherein the Schottky contact is comprised of a metal, wherein the sidewall of the first ohmic contact does not extend past the sidewall of the Schottky contact.

7. The integrated light emitting device and photodetecting device recited in claim 6 wherein the first ohmic contact and the Schottky contact are separated by a first dielectric layer.

8. The integrated light emitting device and photodetecting device recited in claim 6, the first ohmic contact having a first sidewall, the Schottky contact including a first region generally parallel to the first surface and a second region generally orthogonal to the first surface, the second region of the Schottky contact region extending past the first sidewall of the first ohmic contact to make contact with the first surface.

9. The integrated light emitting device and photodetecting device recited in claim 6 further including an absorption layer formed on the first surface, the absorption layer being positioned underneath the Schottky contact.

10. The integrated light emitting device and photodetecting device recited in claim 1 further including a first ohmic contact formed on the first surface, wherein the first ohmic contact is biased to forward biased the light emitting device and the Schottky contact is biased to reverse bias the photodetecting device.

11. A method of forming an integrated light emitting device and photodetecting device comprising the steps of:

forming a first mirror region on a substrate having a first side and a second opposite side, the first mirror region having a first and second opposite side, the first mirror region for reflecting light towards a light generation region, wherein the second side of the first mirror region is located on the first side of the substrate;

forming an active region including the light generation region for generating light in response to light passing therethrough, the light generation region for emitting light in a first direction through a first surface, the active region having a first side and a second opposite side, wherein the second side of the active region is located on the first side of the first mirror region;

forming a second mirror region, having a first side and a second opposite side, the second mirror region for reflecting light towards the light generation region, the first side of the second mirror region being located on the first side of the active region; and

forming a Schottky contact on the first surface.

12. The method recited in claim 11 where Schottky barrier of the Schottky contact is less than the photon energy of the light emitted in the first direction.

13. The method recited in claim 11 wherein the first surface is the second side of the second mirror region.

14. The method recited in claim 11 wherein the first surface is the second side of the substrate.

15. The method recited in claim 11 wherein the Schottky contact is comprised of a metal, the metal being at least partially transparent to the light emitted in the first direction.

16. The method recited in claim 11 further including the step of forming a first ohmic contact on the first surface.

17. The method recited in claim 11 including the step of forming an absorption layer between the first surface and the Schottky contact.

18. The method recited in claim 16 further including the step of forming a dielectric region between the first ohmic contact and the Schottky contact.