Method of manufacturing a magnetoresistive sensor

• US 5,492,720 A
• Filed: 04/06/1995
• Issued: 02/20/1996
• Est. Priority Date: 08/15/1994
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Lin, Tsann, Gill, Hardayal S., Wallash, Albert J., Tsang, Ching H.
• Primary Examiner(s): PIANALTO, BERNARD D
• Application Number:
  US08/417,874
• Time in Patent Office: 320 Days
• Field of Search: 427/128-132, 428/900, 428/928
• US Class Current: 427/131
• CPC Class Codes: G11B 5/3932 Magnetic biasing films
• CPC Class Codes: G11B 5/399 with intrinsic biasing, e.g. provided by equipotential strips

Abstract

In a magnetoresistive (MR) read sensor in which the MR layer is transversely biased by a soft magnetic layer separated from the MR layer by a nonmagnetic spacer layer an antiferromagnetic stabilization layer of NiO provides a stabilizing exchange-coupled magnetic field to the transverse bias layer insuring that the transverse bias layer is fully saturated in a preferred direction during sensor operation.

Claims

1. A method or fabricating a magnetoresistive sensor of the type having a transverse bias layer of ferromagnetic material separated from a magnetoresistive layer by a nonmagnetic spacer layer, said transverse bias layer for providing a transverse bias magnetic field in said magnetoresistive layer, and a longitudinal bias layer of an antiferromagnetic material formed in direct contact with said magnetoresistive layer for providing an exchange-coupled longitudinal bias field in said magnetoresistive layer, wherein a stabilization layer of an antiferromagnetic material is in direct contact with said transverse bias layer for inducing an exchange-coupled magnetic field in said transverse bias layer, said method comprising the steps of:

depositing a stabilization layer of a first antiferromagnetic material on a substrate;

depositing a transverse bias layer of a ferromagnetic material over and in contact with said stabilization layer;

depositing a spacer layer of a nonmagnetic material over said transverse bias layer;

depositing a layer of magnetoresistive material over said spacer layer, said magnetoresistive layer separated from said transverse bias layer by said spacer layer;

depositing a longitudinal bias layer of a second antiferromagnetic material over said magnetoresistive layer and in direct contact with said magnetoresistive layer, said first and second antiferromagnetic materials having different Neel temperatures;

annealing said magnetoresistive sensor at a temperature approximately equal to the higher of the Neel temperatures of said first and second antiferromagnetic materials in the presence of a magnetic field having a desired direction for setting the direction of the exchange-coupled magnetic field induced by the first or second antiferromagnetic material associated with the higher of the two Neel temperatures; and

annealing said magnetoresistive sensor at a temperature approximately equal to the lower of the Neel temperatures of said first and second antiferromagnetic materials in the presence of a magnetic field having a desired direction for setting the direction of the exchange-coupled magnetic field induced by the first or second antiferromagnetic material associated with the lower of the two Neel temperatures.

2. The method of claim 1 wherein said first antiferromagnetic material has a lower Neel temperature than said second antiferromagnetic material.

3. The method of claim 2 wherein said first antiferromagnetic material comprises nickel oxide and said second antiferromagnetic material is an alloy of manganese.

4. The method of claim 3 wherein said second antiferromagnetic material is selected from the group consisting of nickel-manganese and manganese-iron.

5. The method of claim 1 further comprising the additional step of first depositing a heat sink layer on said substrate, said stabilization layer being deposited over and in contact with said heat sink layer.

6. The method of claim 5 wherein said head sink layer comprises tantalum.

7. The method of claim 1 wherein said first antiferromagnetic material comprises a dielectric antiferromagnetic material having a low Neel temperature when compared to the Neel temperature of said second antiferromagnetic material.

8. A method for fabricating a magnetoresistive sensor of the type having a transverse bias layer of ferromagnetic material separated from magnetoresistive layer by a nonmagnetic spacer layer formed in a central region of said magnetoresistive sensor, said transverse bias layer for providing a transverse bias magnetic field in said magnetoresistive layer, and a longitudinal bias layer of a high coercivity material formed in end regions of said magnetoresistive sensor, said end regions separated by said central region, said longitudinal bias layer for providing a longitudinal bias field in said magnetoresistive layer, wherein a stabilization layer of an antiferromagnetic material is in direct contact with said transverse bias layer for inducing an exchange-coupled magnetic field in said transverse bias layer, said method comprising the steps of:

depositing a stabilization layer of an antiferromagnetic material on a substrate;

depositing a transverse bias layer of a ferromagnetic material over and in contact with said stabilization layer;

depositing a spacer layer of a nonmagnetic material over said transverse bias layer;

depositing a layer of magnetoresistive material over said spacer layer, said magnetoresistive layer separated from said transverse bias layer by said spacer layer;

patterning said transverse bias layer, said spacer layer and said magnetoresistive layer to extend over only said central region;

depositing a longitudinal bias layer of a high coercivity material in said end regions of said magnetoresistive sensor for providing a longitudinal bias field in said magnetoresistive layer;

saturating said longitudinal bias layer with an externally applied magnetic field having a desired direction with respect to the longitudinal axis of said magnetoresistive layer for setting the magnetic field direction of said longitudinal bias layer; and

annealing said magnetoresistive sensor at a temperature approximately equal to the Neel temperature of antiferromagnetic material in the presence of a magnetic field having a desired direction for setting the direction of the exchange-coupled magnetic field induced in the transverse bias layer by said stabilization layer.

9. The method of claim 8 wherein said antiferromagnetic material comprises a dielectric antiferromagnetic material.

10. The method of claim 8 wherein said antiferromagnetic material comprises nickel-oxide.

11. The method of claim 8 wherein said high coercivity material is selected from the group consisting of cobalt-platinum-chromium, cobalt-nickel-chromium and cobalt-chromium.

12. The method of claim 8 wherein said transverse bias layer comprises a material selected from the group consisting of nickel-iron-niobium, nickel-iron-rhodium and nickel-iron-chromium.

13. The method of claim 8 wherein said stabilization layer extends over said end regions and said central region of said magnetoresistive sensor, said longitudinal bias layer being deposited on said stabilization layer in said end regions of said magnetoresistive sensor.

14. The method of claim 8 further comprising the additional steps of first depositing a heat sink layer on said substrate, said stabilization layer being deposited over and in contact with said heat sink layer.

15. The method of claim 14 wherein said head sink layer comprises tantalum.