Method of forming a semiconductor device having a LC element

• US 5,492,856 A
• Filed: 06/02/1995
• Issued: 02/20/1996
• Est. Priority Date: 11/10/1993
• Status: Expired due to Term

• Current Assignee: Niigata Seimitsu Co., Ltd. (Tetsuo Funai)
• Original Assignee: Susumu Okamura, Takeshi Ikeda
• Inventors: Ikeda, Takeshi, Okamura, Susumu
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): TSAI, H JEY
• Application Number:
  US08/460,165
• Time in Patent Office: 263 Days
• Field of Search: 437/904, 437/47, 437/60, 437/919, 437/957-958, 257/531, 257/277, 257/275, 148/DIG. 163, 333/184, 333/242, 333/247, 333/191, 333/248
• US Class Current: 438/381
• CPC Class Codes: H01F 2017/008 Electric or magnetic shielding of printed inductances
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H03H 2001/0064 comprising semiconductor material
• CPC Class Codes: H03H 2001/0078 comprising spiral inductor on a substrate
• CPC Class Codes: H03H 7/0115 comprising only inductors and capacitors H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence
• CPC Class Codes: Y10S 438/901 Capacitive junction

Abstract

An LC element with a pn junction layer formed near the surface of a p-Si substrate by forming an n⁺ region having a predetermined shape and in a portion thereof additionally forming a p⁺ region having the same shape, and with first and second electrodes formed over entire length on the surface of this pn junction layer; wherein the two electrodes respectively function as inductors and by using the pn junction layer with reverse bias, a distributed constant type capacitor is formed between these inductors, thereby providing excellent attenuation characteristics over a wide band, a semiconductor device including the LC element, and a method of manufacturing the LC element. This LC element and semiconductor device can be easily manufactured; in the case of manufacturing as a portion of an IC or LSI device, component assembly work in subsequent processing can be abbreviated, and by changing the capacitance of the distributed constant type capacitor according to requirements, the characteristics can be changed.

Claims

1. A method of manufacturing an LC element comprising the steps of:

a first process whereby a spiral shaped second conductivity type region is formed in a semiconductor substrate having a first conductivity type,

a second process whereby a spiral shaped pn junction layer is formed by forming an inverted layer of a first conductivity type region in a portion of said second conductivity type region including a surface formed in said first process,

a third process whereby two inductor electrodes respectively having inductances are formed, electrically connected over their entire length respectively to said first conductivity type region and said second conductivity type region, on a surface of said pn junction layer, and

a fourth process whereby wiring layers are formed respectively connected to said two inductor electrodes.

2. A method of manufacturing an LC element comprising the steps of:

a first process whereby a meander shaped second conductivity type region is formed in a semiconductor substrate having a first conductivity type,

a second process whereby a meander shaped pn junction layer is formed by forming an inverted layer of a first conductivity type region in a portion of said second conductivity type region including a surface formed in said first process,

a third process whereby two inductor electrodes respectively having inductances are formed, electrically connected over their entire length respectively to said first conductivity type region and said second conductivity type region, on a surface of said pn junction layer, and

a fourth process whereby wiring layers are formed respectively connected to said two inductor electrodes.