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Method of forming a semiconductor device having a LC element

  • US 5,492,856 A
  • Filed: 06/02/1995
  • Issued: 02/20/1996
  • Est. Priority Date: 11/10/1993
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing an LC element comprising the steps of:

  • a first process whereby a spiral shaped second conductivity type region is formed in a semiconductor substrate having a first conductivity type,a second process whereby a spiral shaped pn junction layer is formed by forming an inverted layer of a first conductivity type region in a portion of said second conductivity type region including a surface formed in said first process,a third process whereby two inductor electrodes respectively having inductances are formed, electrically connected over their entire length respectively to said first conductivity type region and said second conductivity type region, on a surface of said pn junction layer, anda fourth process whereby wiring layers are formed respectively connected to said two inductor electrodes.

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