Method of forming a plasma polymerized film

• US 5,494,712 A
• Filed: 11/17/1994
• Issued: 02/27/1996
• Est. Priority Date: 08/27/1993
• Status: Expired due to Term

• Current Assignee: The Dow Chemical Company (Dow, Inc.)
• Original Assignee: The Dow Chemical Company (Dow, Inc.)
• Inventors: Hu, Ing-Feng, Tou, James C.
• Primary Examiner(s): PIANALTO, BERNARD D
• Application Number:
  US08/341,243
• Time in Patent Office: 467 Days
• Field of Search: 427/489, 427/493, 427/571, 427/574, 427/578, 427/585, 427/598, 427/294
• US Class Current: 427/489
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/3266 Magnetic control means

Abstract

A method of preparing a coated substrate is disclosed. The substrate is coated with a plasma generated polymer containing Si, O, C and H in specific atom ratio wherein the polymer also contains certain functional groups. A power density of about 10⁶ to about 10⁸ J/Kg is employed in the plasma polymerization process.

Claims

1. A method of forming a plasma polymerized organosilicone film on a surface of a substrate which comprises:

a) providing the substrate within a a reaction zone of a reaction vessel,

b) providing a vacuum within said reaction vessel ranging from about 10^-3 to about 1 Torr,

c) forming a plasma of reaction gases from organosilicone monomer and excess oxygen while flowing said reaction gases essentially perpendicular to the surface of said substrate, and

d) intensifying the plasma by magnetic confinement of at least 100 gauss to form a concentrated reaction plasma said magnetic confinement being positioned within said reaction zone at a point adjacent to and extending into said concentrated reaction plasma and,

e) continuing said film formation to a thickness of about 2 to about 8 microns.

2. The method of claim 1 wherein said organosilicone monomer is selected from the group consisting of silanes, siloxanes, silazanes or mixtures thereof.

3. The method of claim 1 wherein the organosilicone monomer is selected from the group consisting of tetramethyldisiloxane, hexamethyldisiloxane or mixture thereof.

4. The method of claim 1 wherein the organosilicone monomer is selected from the group consisting of hexamethylsilazane, tetramethylsiloxane or mixture thereof.

5. The method of claim 1 wherein the organosilicone monomer is selected from the group consisting of dimethoxydimethylsilane, methyltrimethoxysilane, tetramethoxysilane, ethyltrimethoxysilane, diethoxydimethylsilane, methyltriethoxysilane, octamethylcyclotetrasilane, triethoxyvinylsilane, tetraethoxysilane, dimethoxy-methylphenylsilane, phenyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-methacryloxy-propyltrimthoxysilane, diethoxymethylphenylsilane, tris(2-methoxyethoxy)vinylsilane, phenyltriethoxysilane, and dimethoxydiphenylsilane or mixtures thereof.