Method for treating surface of aluminum material and plasma treating apparatus

• US 5,494,713 A
• Filed: 02/03/1995
• Issued: 02/27/1996
• Est. Priority Date: 02/03/1994
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Ootuki, Hayashi
• Primary Examiner(s): PIANALTO, BERNARD D
• Application Number:
  US08/383,232
• Time in Patent Office: 389 Days
• Field of Search: 427/579, 427/585, 427/294, 427/419.2, 427/419.7, 204/181.2, 118/723 R
• US Class Current: 427/579
• CPC Class Codes: C23C 8/36 using ionised gases, e.g. ionitriding
• CPC Class Codes: C23C 8/80 After-treatment
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32559 Protection means, e.g. coatings
• CPC Class Codes: Y10S 156/914 Differential etching apparatus including particular materials of construction

Abstract

An alumite coating film is formed on a surface of an aluminum electrode by anodic oxidation. Pores formed on the alumite coating film are sealed. Thereafter, a silicon nitride film is formed on a surface of the alumite coating film by plasma CVD. In a plasma etching apparatus using the aluminum electrode on which the alumite coating film and the silicon nitride film are sequentially layered, HBr/HCl gas is used as process gas to perform plasma etching of a wafer. An active radical generated from HBr/HCl etches the wafer and attacks the aluminum electrode. Since the aluminum electrode is protected with the silicon nitride film, an aluminum substrate and the alumite coating film are prevented from being etched. Therefore, impurity materials of the aluminum substrate and the alumite coating film are not dispersed into the chamber of the plasma etching apparatus. As a result, the wafer can be prevented from being contaminated by the impurity materials.

Claims

1. A method for treating a surface of aluminum material made of aluminum, comprising the steps of:

forming an anodic oxide coating film on the surface of aluminum material by anodic oxidation;

sealing pores formed on said anodic oxide coating film by said anodic oxidation treatment; and

forming a silicon coating film on a surface of said anodic oxide coating film by plasma CVD after said sealing treatment.

2. A method according to claim 1, wherein a thickness of said silicon coating film is within 5 to 10 μ

m.

3. A method according to claim 1, wherein said silicon coating film is at least one selected from a group consisting of SiO₂ and SiN₂.

4. A method according to claim 1, wherein aluminum material is material to be used in a plasma treating apparatus.

5. A method according to claim 4, wherein said aluminum material is used as a mount electrode, an opposite electrode, and an inner wall material of a chamber of said plasma treating apparatus.

6. A method according to claim 1, wherein forming is provided to the surface of said aluminum material before said anodic oxidation.

7. A plasma treating apparatus comprising:

a chamber;

a mount electrode provided in said chamber;

an opposite electrode provided in said chamber so as to be opposite to said mount electrode;

process gas supplying means for supplying process gas to said chamber; and

a high-frequency power source for supplying a high frequency to at least one of said mount electrode and said opposite electrode,

wherein when at least one of said mount electrode and said opposite electrode is made of aluminum, an anodic oxide film and a silicon coating film are sequentially layered on a surface of said aluminum.

8. A plasma treating apparatus according to claim 7, wherein a thickness of said silicon coating film is within 5 to 10 μ

m.

9. A plasma treating apparatus according to claim 7, wherein said silicon coating film is at least one selected from a group consisting of SiO₂ and SiN₂.

10. A plasma treating apparatus according to claim 7, wherein a large number of openings is formed on said opposite electrode to supply process gas, and said anodic oxide film and said silicon coating film are formed on a surface of said opposite electrode including inner peripheral surfaces of these openings.

11. A plasma treating apparatus according to claim 7, wherein process gas is etching gas.

12. A plasma treating apparatus according to claim 11, wherein etching gas is HBr/HCl.