Semiconductor device

• US 5,495,121 A
• Filed: 09/30/1992
• Issued: 02/27/1996
• Est. Priority Date: 09/30/1991
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Mase, Akira, Takemura, Yasuhiko, Uochi, Hideki, Yamazaki, Shunpei
• Primary Examiner(s): Crane, Sara W.
• Assistant Examiner(s): Wallace, Valencia Martin
• Application Number:
  US07/953,943
• Time in Patent Office: 1,245 Days
• Field of Search: 257/324, 257/410, 257/412, 257/401, 257/57, 257/66, 257/383, 257/408, 257/384
• US Class Current: 257/384
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136245 having complementary transistors
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78666 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

A semiconductor device or a semiconductor integrated circuit includes a field effect transistor having a source region, a drain region and a channel regions formed within a semiconductor substrate. A lower wiring is formed on the semiconductor substrate to form a gate electrode and its extension and oxidized to form an oxide film covering the lower wiring. An upper wiring is formed over the lower wiring on the semiconductor substrate to make contact with the drain or source region. The lower wiring is electrically insulated from the upper wiring by the oxide film.

Claims

1. A semiconductor device comprising:

a semiconductor layer;

a first insulating layer formed on the semiconductor layer, said first insulating layer including a gate insulating layer;

a gate electrode formed on the insulating layer;

a first wiring formed on said first insulating layer provided on said semiconductor layer, said wiring comprising the same material as said gate electrode and connected to said gate electrode; and

a second wiring extending over said first wiring,

wherein a surface of said gate electrode and said first wiring is each covered with an anodic oxidation film of said gate electrode and said first wiring, and said second wiring is isolated from said first wiring by the anodic oxidation film of said first wiring.

2. The semiconductor device as claimed in claim 1 wherein said gate electrode and said first wiring comprise the same material selected from the group consisting of Ti, Al, Ta, Cr, silicon, WSi₂ and MoSi₂.

3. The semiconductor device as claimed in claim 1 further comprising another insulating layer interposed between said second wiring and said anodic oxidation film of said first wiring.

4. The semiconductor device as claimed in claim 1 wherein said second wiring is connected through at least one contact hole in at least said first insulating layer with at least one of source and drain regions formed within said semiconductor.

5. The semiconductor device as claimed in claim 1 wherein said gate electrode and said first wiring comprise a phosphorus doped polycrystalline silicon.

6. The semiconductor integrated circuit as claimed in claim 1 wherein said second insulating layer is a field insulator.

7. The semiconductor device as claimed in claim 1 wherein said gate electrode comprises a multi-layer of a phosphorus doped silicon film and a silicide film selected from the group consisting of a WSi₂ film and a MoSi₂ film.

10. A device as in claim 1 where said semiconductor comprises a semiconductor substrate.

11. A device as in claim 1 where said semiconductor comprises a semiconductor layer disposed on an insulating surface.

12. A device as in claim 1 where said device is an integrated circuit.

8. A semiconductor device comprising:

a gate insulating layer formed on a semiconductor;

a gate electrode formed on said gate insulating layer;

a channel region formed within said semiconductor below said gate electrode;

a pair of first impurity regions formed within said semiconductor between which said channel region is defined, where said first impurity regions are doped with an impurity at a first concentration; and

a pair of second impurity regions adjacent to said first impurity regions within said semiconductor where said second impurity regions are doped with the impurity at a second concentration higher than said first concentration,

wherein said gate electrode is covered with an oxide layer of said gate electrode and said channel region extends beyond edges of said gate electrode.

9. The device of claim 8 wherein said oxide layer is an anodic oxidation layer of said gate electrode.

13. A semiconductor device comprising:

a gate insulating layer formed on a semiconductor layer;

a gate electrode formed on said gate insulating layer;

a channel region formed within said semiconductor layer below said gate electrode;

a pair of first impurity regions formed within said semiconductor layer between which said channel region is defined, where said first impurity regions are doped with an impurity at a first concentration; and

a pair of second impurity regions adjacent to said first impurity regions within said semiconductor layer where said second impurity regions are doped with the impurity at a second concentration higher than said first concentration,

wherein said gate electrode is covered with an oxide layer of said gate electrode and where said first impurity regions are located under said oxide layer.

14. The device of claim 13 wherein said oxide layer of said gate electrode is an anodic oxidation layer of said gate electrode.

15. The device of claim 13 wherein said gate electrode and said first wiring comprise the same material selected from the group consisting of Ti, Al, Ta, Cr, silicon, WSi₂ and MoSi₂.

16. The device of claim 14 further comprising another insulating layer interposed between said second wiring and said anodic oxidation film of said first wiring.

17. A semiconductor device comprising:

a gate insulating layer formed on a semiconductor layer;

a gate electrode formed on said gate insulating layer;

a channel region formed within said semiconductor layer below said gate electrode;

a pair of first impurity regions formed within said semiconductor layer between which said channel region is defined, where said first impurity regions are doped with an impurity at a first concentration; and

a pair of second impurity regions adjacent to said first impurity regions within said semiconductor layer where said second impurity regions are doped with the impurity at a second concentration higher than said first concentration,

wherein said gate electrode is covered with an oxide layer of said gate electrode and where said channel region extends to but not beyond edges of said gate electrode.

18. The device of claim 17 wherein said oxide layer of said gate electrode is an anodic oxidation layer of said gate electrode.

19. The device of claim 17 wherein said gate electrode and said first wiring comprise the same material selected from the group consisting of Ti, Al, Ta, Cr, silicon, WSi₂ and MoSi₂.

20. The device of claim 18 further comprising another insulating layer interposed between said second wiring and said anodic oxidation film of said first wiring.

21. A semiconductor device comprising:

a gate insulating layer formed on a semiconductor layer;

a gate electrode formed on said gate insulating layer;

a channel region formed within said semiconductor layer below said gate electrode;

a pair of first impurity regions formed within said semiconductor layer between which said channel region is defined, where said first impurity regions are doped with an impurity at a first concentration; and

a pair of second impurity regions adjacent to said first impurity regions within said semiconductor layer where said second impurity regions are doped with the impurity at a second concentration higher than said first concentration,

a further insulating layer formed on said semiconductor layer over at least said second impurity regions;

wherein said gate electrode is covered with an oxide layer of said gate electrode and where said further insulating layer is thicker than said gate insulating layer.

22. The device of claim 21 wherein said oxide layer of said gate electrode is an anodic oxidation layer of said gate electrode.

23. The device of claim 21 wherein said gate electrode and said first wiring comprise the same material selected from the group consisting of Ti, Al, Ta, Cr, silicon, WSi₂ and MoSi₂.

24. The device of claim 22 further comprising another insulating layer interposed between said second wiring and said anodic oxidation film of said first wiring.

25. The device of claim 21 wherein said channel region extends beyond edges of said gate electrode.

26. The device of claim 21 wherein said channel region extends to but not beyond edges of said gate electrode.