Highly resistive structures for integrated circuits and method of manufacturing the same

• US 5,496,762 A
• Filed: 06/02/1994
• Issued: 03/05/1996
• Est. Priority Date: 06/02/1994
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Semiconductor, Inc. (Micron Technology, Inc.)
• Inventors: Sandhu, Gurtej S., Doan, Trung T., Cathey, David A.
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): EVERHART, CARIDAD
• Application Number:
  US08/253,049
• Time in Patent Office: 642 Days
• Field of Search: 437/60, 437/918, 148/DIG. 136, 148/DIG. 117
• US Class Current: 438/384
• CPC Class Codes: H01L 28/24 with an active material comprising a refractory, transition or noble metal, metal compound or metal alloy, e.g. silicides, oxides, nitrides
• CPC Class Codes: H10B 10/00 Static random access memory [SRAM] devices
• CPC Class Codes: H10B 10/15 comprising a resistor load element
• CPC Class Codes: Y10S 148/117 Oxidation, selective
• CPC Class Codes: Y10S 148/136 Resistors

Abstract

This invention is a process for making resistor structures having high stability and reliability characteristics. Process parameters are easily modifiable to adjust the resistivity of the structures. A layer of titanium nitride, which may contain certain impurities such as carbon, is deposited via chemical vapor deposition by pyrolization of an organometallic precursor compound of the formula Ti(NR₂)₄ either alone or in the presence of either a nitrogen source (e.g. ammonia or nitrogen gas) or an activated species (which may include a halogen, NH₃, or hydrogen radicals, or combinations thereof). The TiN film is then oxidized to create a structure that demonstrates highly stable, highly reliable resistive characteristics, with bulk resistivity values in giga ohm range. In a preferred embodiment of the invention, a predominantly amorphous titanium carbonitride film is deposited on an insulative substrate in a chemical vapor deposition chamber. A layer of titanium is then deposited on top of the titanium carbonitride film. The titanium layer is then patterned with photoresist. The exposed titanium is then etched with a reagent that is selective for titanium over titanium carbonitride (HF, for example, has better than 10:1 selectivity) so that the etch essentially stops when the titanium carbonitride film is exposed. The exposed titanium carbonitride film is then oxidized to achieve the desired resistivity.

Claims

1. A process for manufacturing highly-resistive structures for use in integrated circuits, said process comprising the following sequence of steps:

(a) forming an insulative layer on a semiconductor substrate;

(b) depositing a predominantly amorphous titanium carbonitride layer on top of the insulative layer;

(c) depositing a titanium layer on top of the titanium carbonitride layer;

(d) masking the titanium layer so as to protect certain portions thereof and expose other portions thereof;

(e) removing the exposed portions of the titanium layer so as to expose the underlying titanium carbonitride layer; and

(f) oxidizing the exposed portions of the titanium carbonitride layer.

2. The process of claim 1, wherein the predominantly amorphous titanium carbonitride layer is deposited via chemical vapor deposition by pyrolization of an organometallic precursor compound of the formula Ti(NR₂)₄ wherein R is an alkyl group.

3. The process of claim 2, wherein pyrolization of the organometallic precursor compound takes place in the presence of a nitrogen source.

4. The process of claim 3, wherein said nitrogen source is ammonia.

5. The process of claim 3, wherein said nitrogen source is nitrogen gas.

6. The process of claim 2, wherein pyrolization of the organometallic precursor compound takes place in the presence of "at least one radical species derived from the group consisting of halogens, ammonia, and hydrogen".

7. The process of claim 1, wherein the exposed portions of the titanium layer are removed with a hydrofluoric acid etch.

8. The process of claim 1, wherein the exposed portions of the titanium layer are removed selectively with respect to the titanium carbonitride layer with a dry etch.

9. The process of claim 1, wherein the exposed portions of the titanium carbonitride layer are oxidized in an oxygen plasma.

10. The process of claim 1, wherein the exposed portions of the titanium carbonitride layer are oxidized by at least one oxidant gas.

11. A process for manufacturing highly-resistive structures for use in integrated circuits, said process comprising the following sequence of steps:

(a) depositing a predominantly amorphous titanium carbonitride layer on top of an insulative layer;

(b) depositing a titanium layer on top of the titanium nitride layer;

(c) masking the titanium layer so as to protect certain portions thereof and expose other portions thereof;

(d) removing the exposed portions of the titanium layer so as to expose the underlying titanium carbonitride layer; and

(e) oxidizing the exposed portions of the titanium carbonitride layer.

12. The process of claim 11, wherein the predominantly amorphous titanium carbonitride layer is deposited via chemical vapor deposition by pyrolization of an organometallic precursor compound of the formula Ti(NR₂)₄ wherein R is an alkyl group.

13. The process of claim 12, wherein pyrolization of the organometallic precursor compound takes place in the presence of a nitrogen source.

14. The process of claim 13, wherein said nitrogen source is ammonia.

15. The process of claim 13, wherein said nitrogen source is nitrogen gas.

16. The process of claim 12, wherein pyrolization of the organometallic precursor compound takes place in the presence of "at least one radical species derived from the group consisting of halogens, ammonia, and hydrogen".