Method of manufacturing film carrier type substrate

• US 5,496,772 A
• Filed: 06/04/1992
• Issued: 03/05/1996
• Est. Priority Date: 04/07/1992
• Status: Expired due to Fees

• Current Assignee: Nissin Electric Company Limited (Sumitomo Corporation)
• Original Assignee: Nissin Electric Company Limited (Sumitomo Corporation)
• Inventors: Ebe, Akinori, Nishiyama, Satoshi, Ogata, Kiyoshi
• Primary Examiner(s): BRENEMAN, ROBERT B
• Application Number:
  US07/892,380
• Time in Patent Office: 1,370 Days
• Field of Search: 437/228, 437/187, 437/245, 156/667, 156/659.1, 204/192.14, 204/192.3
• US Class Current: 427/537
• CPC Class Codes: H01L 21/4846 Leads on or in insulating or insulated substrates, e.g. metallisation H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00
• CPC Class Codes: H05K 1/0393 Flexible materials H05K1/038 takes precedence; specific organic compositions are classified in H05K1/0313 and subgroups
• CPC Class Codes: H05K 2201/2063 mixed adhesion layer containing metallic/inorganic and polymeric materials
• CPC Class Codes: H05K 3/022 Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
• CPC Class Codes: H05K 3/388 by the use of a metallic or inorganic thin film adhesion layer

Abstract

A film carrier type substrate includes a film made of organic high molecular substance, a metal layer formed over the film by depositing metal vapor and irradiating nitrogen gas ions on the film and a mixing layer made of a mixture of the materials of both the metal layer and the film formed in the interface between the metal layer and the film. Prior to forming the metal layer, inert gas ions and/or nitrogen gas ions may be irradiated on the film in advance.

Claims

1. A method of manufacturing a film carrier type substrate in vacuum, comprising the steps of:

depositing metal vapor on a file made of organic high molecular substance; and

irradiating accelerated nitrogen gas ions on said film simultaneously with the step of depositing metal vapor, an accelerating energy x of which is defined by the range 2 KeV<

x<

10 KeV, whereby a metal layer is formed over said film and a mixing layer made of a mixture of materials of both said metal layer and said film is formed in an interface between said metal layer and said film.

2. A method of manufacturing a film carrier type substrate in vacuum, comprising the steps of:

irradiating accelerated ions of a gas selected from the group consisting of nitrogen and an inert gas on a film made of organic high molecular substance, wherein an accelerating energy x of said ions is defined by the range 2 KeV<

x<

10 KeV; and

after the step of irradiating ions, conducting deposition of metal vapor on said film and irradiation of accelerated ions of said gas on said film simultaneously, whereby a metal layer is formed over said film and a mixing layer made of a mixture of materials of both said metal layer and said film is formed in an interface between said metal layer and said film.