Semiconductor device using element isolation by field shield
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
a field-shield electrode made of a thin film of at least one of polysilicon and amorphous silicon and formed on a surface of an element-isolation region of the substrate with an insulating film interposed therebetween for defining an active region in said substrate; and
a transistor having a gate electrode formed on a surface of said active region of said substrate with a gate insulating film interposed between said substrate and said gate electrode;
wherein said field-shield electrode is connected to a predetermined potential and said insulating film has a thickness of 5 nm-10 nm which is less than a thickness of the gate insulating film of said transistor.
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Accused Products
Abstract
A semiconductor device comprises a semiconductor substrate a field-shield electrode made of a thin film of at least one of polysilicon and amorphous silicon and formed on a surface of an element-isolation region of the substrate with an insulating film interposed therebetween for defining an active region in the substrate and a transistor having a gate electrode formed on a surface of the active region of the substrate with a gate insulating film interposed between the substrate and the gate electrode wherein the field-shield electrode is connected to a predetermined potential and the insulating film has a thickness of 5 nm-10 nm which is less than a thickness of the gate insulating film of the transistor.
9 Citations
4 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a field-shield electrode made of a thin film of at least one of polysilicon and amorphous silicon and formed on a surface of an element-isolation region of the substrate with an insulating film interposed therebetween for defining an active region in said substrate; and a transistor having a gate electrode formed on a surface of said active region of said substrate with a gate insulating film interposed between said substrate and said gate electrode; wherein said field-shield electrode is connected to a predetermined potential and said insulating film has a thickness of 5 nm-10 nm which is less than a thickness of the gate insulating film of said transistor. - View Dependent Claims (2, 3, 4)
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Specification
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- Resources
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Current AssigneeUnited Microelectronics Corporation
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Original AssigneeNippon Steel Corporation
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InventorsKawamura, Koichiro
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Primary Examiner(s)Hille, Rolf
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Assistant Examiner(s)TRAN, MINH LOAN
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Application NumberUS08/362,784Time in Patent Office445 DaysField of Search257/372, 257/394, 257/409, 257/488, 257/503, 257/508, 257/630, 257/659, 257/913US Class Current257/503CPC Class CodesH01L 29/402 Field platesY10S 257/913 with means to absorb or loc...
