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Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same

  • US 5,499,207 A
  • Filed: 07/28/1994
  • Issued: 03/12/1996
  • Est. Priority Date: 08/06/1993
  • Status: Expired due to Term
First Claim
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1. A semiconductor memory device having a plurality of capacitors arranged in parallel, wherein each capacitor include at least one electrode, said memory device comprising:

  • a first insulator arranged between the electrodes of said capacitors; and

    a second insulator acting as dielectrics of said capacitors,wherein said first insulator is a modified portion of said second insulator.

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