Dry process apparatus using plural kinds of gas

• US 5,500,256 A
• Filed: 05/24/1995
• Issued: 03/19/1996
• Est. Priority Date: 08/16/1994
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Watabe, Masahiro
• Primary Examiner(s): BUEKER, RICHARD R
• Application Number:
  US08/449,268
• Time in Patent Office: 300 Days
• Field of Search: 118/715, 118/723 E, 118/725, 427/255.2, 427/255.3, 427/255.7, 427/579, 427/585, 437/238, 437/241
• US Class Current: 427/579
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus

Abstract

An apparatus for manufacturing a semiconductor device including: a process chamber capable of being evacuated; a wafer susceptor disposed in the process chamber, the wafer susceptor having a plane on which a wafer to be processed is placed; a plurality of gas flow paths forming a structure of a plurality of spirals, facing the table, and being disposed along a flat plane generally parallel to the plane of the susceptor; and a plurality of gas ejecting holes formed in a plane of the gas flow paths facing the susceptor, for and along each gas flow path. A plurality of processes can be performed in the same chamber.

Claims

1. A vapor phase processing system comprising:

a process chamber capable of being evacuated;

a wafer susceptor disposed in the process chamber, the wafer susceptor having a plane on which a wafer to be processed is placed;

a plurality of gas flow paths forming a structure of a plurality of spirals, facing the wafer susceptor, and being disposed along a flat plane generally parallel to the wafer susceptor; and

a plurality of gas supply holes formed in a plane of the gas flow paths facing the wafer susceptor, for and along each gas flow path.

2. A vapor phase processing apparatus according to claim 1, wherein all of the plurality of gas flow paths are formed to have the same conductance of gas flow under equivalent conditions.

3. A vapor phase processing apparatus according to claim 1, wherein the size of each of the gas supply holes is different form one gas flow path to another.

4. A vapor phase processing apparatus according to claim 1, wherein the pitch of the gas supply holes is different from one flow path to another.

5. A vapor phase processing apparatus according to claim 1, further comprising a plurality of gas pipes for supplying a process gas to respective gas flow paths, each gas pipe being connected to the inner spiral start area of one of the gas flow paths.

6. A vapor phase processing apparatus according to claim 1, wherein the plurality of gas flow paths are made of conductive material, and the vapor phase process apparatus further comprises one or more high frequency power sources for supplying a high frequency power to one or more of the plurality of gas flow paths.

7. A vapor phase processing apparatus according to claim 6, wherein the plurality of gas flow paths are electrically isolated from each other and the high frequency power source is provided for each of the plurality of gas flow paths.

8. A vapor phase processing apparatus according to claim 7, wherein one of the one or more high frequency power sources is adapted to supply a high frequency power at two or more frequencies superposed on each other and at a desired frequency component power ratio.

9. A vapor phase processing apparatus according to claim 6, wherein the plane of the plurality of gas flow paths facing the susceptor is a flat plane parallel to the plane of the susceptor.

10. A vapor phase processing apparatus according to claim 7, wherein the plane of the plurality of gas flow paths facing the susceptor is a flat plane parallel to the plane of the susceptor.

11. A method for a vapor phase process comprising:

a step of placing a wafer to be processed, in a process chamber capable of being evacuated;

a first vapor phase process step of processing the wafer by supplying a first process gas from a first gas flow path group including one or more gas flow paths, the first gas flow path group being selected from a plurality of gas flow paths disposed along a flat plane generally parallel to the wafer and forming a structure of a plurality of spirals, each gas flow path independently supplying a process gas; and

a second vapor phase process step of processing the wafer by supplying out a second process gas from a second gas flow path group including one or more gas flow paths different from the first gas flow path group selected from the plurality of gas flow paths.

12. A method for a vapor phase process according to claim 11, wherein one of the first and second vapor phase process steps processes the wafer while supplying a high frequency power to the plurality of gas flow paths and generating high frequency plasma in the process chamber.

13. A method for a vapor phase process according to claim 11, wherein the first and second vapor phase process steps process the wafer while supplying a high frequency power to the plurality of gas flow paths and generating high frequency plasma in the process chamber.

14. A method for a vapor phase process according to claim 13, wherein one of the first and second vapor phase process steps supplies a superposed high frequency power at two or more frequencies to one of the first and second gas flow path groups.

15. A method for a vapor phase process according to claim 11, wherein the first and second vapor phase process steps supply a high frequency power only to the first and second gas flow path groups.

16. A method for a vapor phase process according to claim 14, wherein the one of the first and second vapor phase process steps is a step of forming an SiN film by supplying a mixed gas of SiH₄ and NH₃, and the other of the first and second vapor phase process steps is a process of forming an SiO₂ film by supplying a mixed gas of SiH₄ and N₂ O.

17. A method for a vapor phase process according to claim 11, wherein the first and second vapor phase process steps are repeated by a certain number of times for certain time periods.

18. A method for a vapor phase process according to claim 13, wherein the first and second vapor phase process steps are performed at the same time.

19. A method for a vapor phase process according to claim 18, wherein the first vapor phase process step is a step of forming an O₃ -TEOS oxide film by supplying a mixed gas of O₃ and tetraethoxysilane, and the second vapor phase process step is a step of cleaning an exposed surface of the wafer by supplying a gas containing fluorine.

20. A method for a vapor phase process according to claim 11, wherein gas flow paths are formed to have different conductance of gas flow, the first and second vapor phase process steps are performed under such a condition that gas pressures at the most upstream positions of the plurality of gas flow paths are generally equal to each other, and the first and second gas flow path groups include gas flow paths selected so as to set a flow rate ratio of the first process gas to the second process gas to a certain value.