Electro-optical device and method of driving the same
First Claim
1. An electro-optical device comprising:
- a substrate having an insulating surface; and
at least two thin film transistors formed on said substrate,wherein at least a channel of each of said thin film transistors contains oxygen at 4×
1019 to 4×
1021 atoms/cm3.
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Accused Products
Abstract
An electro-optical device is disclosed. The electro-optical device comprises pixels arranged in rows and columns. Each pixel comprises at least one complementary TFT (thin film transistor) pair. Each complementary TFT pair consists of an n-channel TFT and a p-channel TFT. The gates of the complementary TFTs of each pixel are all connected to a signal line extending in the Y-direction. The input terminals of the TFTs of each pixel are connected to a pair of signal lines extending in the X-direction. Each pixel has at least one pixel electrode connected to the outputs of the TFTs thereof. In the operation of the electro-optical device, an electric signal is applied to the pair of signal lines extending in the X-direction and an electric signal is applied to the signal line extending in the Y-direction for the duration of the electric signal applied to the pair of signal lines extending in the X-direction.
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Citations
23 Claims
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1. An electro-optical device comprising:
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a substrate having an insulating surface; and at least two thin film transistors formed on said substrate, wherein at least a channel of each of said thin film transistors contains oxygen at 4×
1019 to 4×
1021 atoms/cm3. - View Dependent Claims (2, 3, 4, 5)
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6. An electro-optical device comprising:
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a substrate having an insulating surface; and at least two thin film transistors formed on said substrate, wherein a channel of each of said thin film transistors contains oxygen at 5×
1020 to 5×
1021 atoms/cm3 and a source and a drain of each of said thin film transistors contains oxygen at 7×
1019 atoms/cm3 or less. - View Dependent Claims (7, 8, 9, 10)
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11. An electro-optical device comprising:
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a substrate having an insulating surface; and a plurality of pixel electrodes formed on said substrate in a matrix form, each of said pixel electrodes connected with at least one thin film transistor, wherein a channel of said thin film transistors contains oxygen at 4×
1019 to 4×
1021 atoms/cm3. - View Dependent Claims (12, 13, 14, 15)
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16. An electro-optical device comprising:
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a substrate having an insulating surface; and a plurality of pixel electrodes formed on said substrate in a matrix form, each of said pixel electrodes connected with at least one thin film transistor, wherein a channel of said thin film transistors contains oxygen at 5×
1020 to 5×
1021 atoms/cm3 and a source and a drain thereof contains oxygen at 7×
1019 atoms/cm3 or less. - View Dependent Claims (17, 18, 19, 20)
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21. An active matrix display device comprising:
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a glass substrate; a plurality of pixel electrodes formed on said substrate; a plurality of thin film semiconductor devices formed on said substrate and connected to said pixel electrodes; a peripheral circuit comprising thin film transistors formed on said substrate, wherein said thin film transistors of said peripheral circuit include channel semiconductor layers having at least one of an electron mobility of 15-300 cm2 /V·
s and a hole mobility of 10-200 cm2 /V·
s. - View Dependent Claims (22)
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23. An active matrix display device comprising:
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a glass substrate; a plurality of pixel electrodes formed on said substrate; a plurality of thin film semiconductor devices formed on said substrate and connected to said pixel electrodes; a peripheral circuit comprising thin film transistors formed on said substrate, wherein said thin film transistors of said peripheral circuit have a channel semiconductor layer comprising silicon in which oxygen is contained at a concentration not higher than 7×
1019 atoms/cm3.
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Specification