Wafer scale optoelectronic package

• US 5,500,540 A
• Filed: 04/15/1994
• Issued: 03/19/1996
• Est. Priority Date: 04/15/1994
• Status: Expired due to Fees

• Current Assignee: Optical Communication Products Incorporated (KOCH Industries Incorporated)
• Original Assignee: Photonic Research (Photonic Electronic Limited)
• Inventors: Swirhun, Stan E., Quinn, William E., Jewell, Jack L., Bryan, Robert P.
• Primary Examiner(s): Limanek, Robert P.
• Assistant Examiner(s): WILLIAMS, ALEXANDER O
• Application Number:
  US08/228,202
• Time in Patent Office: 704 Days
• Field of Search: 257/678, 257/85, 257/82, 257/92, 257/97, 257/690, 257/707, 257/717, 257/432, 257/433, 257/434, 257/81, 257/99
• US Class Current: 257/82
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

A package and method for packaging optoelectronic or electronic components is provided in which multiple chip regions are packaged simultaneously prior to sectioning of the wafer into chips. The method and package allows micro-optic and other package elements to be integrated onto wafers on the same face as the optoelectronic or electronic devices without inhibiting the ability to make electrical contact to the devices. The package elements may be integrated to the wafer by material deposition, by spinning, or by physical mounting.

Claims

1. An optoelectronic package comprising:

at least a portion of a first layer having at least a top surface which contains at least two optoelectronic chip regions, each of said optoelectronic chip regions containing at least one optoelectronic element which receives or emits at least one beam of light and receives or emits at least one electronic signal, each of said optoelectronic chip regions containing at least one electrical contact;

means for separating said optoelectronic chip regions; and

a medium comprising medium regions integrated with and aligned with said optoelectronic chip regions, each of said medium regions containing modifying elements which modify said at least one beam of light or said at least one electronic signal, at least one of said medium regions comprising at least a portion of a second layer having at least a top surface which contains at least two electronic chip regions, each of said electronic chip regions containing at least one electronic element electrically connected to said at least one optoelectronic element, each of said electronic chip regions containing at least one electrical contact;

characterized in that said medium regions are commonly mounted when integrated to said optoelectronic chip regions, and that said at least one electrical contact is electrically accessible.

2. The optoelectronic package recited in claim 1 wherein said optical material is selected from the group consisting of photoresit, polyimide and spin cast glass.

3. The optoelectronic package recited in claim 1 wherein at least one of said electrical contacts is a wire bonding pad.

4. The optoelectronic package recited in claim 1 wherein at least one of said electrical contacts is a bump bonding pad.

5. The optoelectronic package recited in claim 1 wherein at least one of said electrical contacts is a tape automated bonding pad.

6. The optoelectronic package recited in claim 1 wherein at least one of said electrical contacts is a via through said first layer.

7. The optoelectronic package recited in claim 1 wherein at least one of said optical elements comprises at least one lens.

8. The optoelectronic package recited in claim 1 wherein said least one optical element comprises at least one prism.

9. The optoelectronic package recited in claim 1 wherein said at least one optical element comprises at least one grating.

10. The optoelectronic package recited in claim 1 wherein said at least one optical element comprises at least one reflector which reflects at least some of said at least one beam of light.

11. The optoelectronic package recited in claim 1 wherein said at least one optical element comprises a waveguide.

12. The optoelectronic package recited in claim 1 wherein said at least one optical element comprises a refractive element.

13. The optoelectronic package recited in claim 1 wherein said at least one optical element comprises a diffractive element.

14. The optoelectronic package recited in claim 1 wherein said at least one optical element comprises a gradient index element.

15. The optoelectronic package recited in claim 1 wherein said optical material is partitioned.

16. The optoelectronic package recited in claim 1 wherein at least one of said electrical contacts is not covered by said optical material.

17. The optoelectronic package recited in claim 1 wherein at least one of said optoelectronic elements comprises a modulator.

18. The optoelectronic package recited in claim 1 wherein at least one of said optoelectronic elements comprises a light emitting diode.

19. The optoelectronic package recited in claim 1 wherein at least one of said optoelectronic elements comprises a laser.

20. The optoelectronic package recited in claim 19 wherein said laser comprises a vertical cavity surface emitting laser.

21. The optoelectronic package recited in claim 1 wherein said optical material is selected from the group consisting of silicon nitride, silicon dioxide, titanium dioxide, aluminum gallium arsenide and indium phosphide.

22. The optoelectronic package recited in claim 1, further comprising an insulating layer disposed between portions of said optoelectronic chip regions and said electronic chip regions.