Semiconductor yaw rate sensor

• US 5,500,549 A
• Filed: 12/13/1994
• Issued: 03/19/1996
• Est. Priority Date: 12/13/1993
• Status: Expired due to Term

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Inventors: Shibata, Kozo, Kano, Kazuhiko, Takeuchi, Yukihiro, Ohtsuka, Yoshinori, Yamamoto, Toshimasa
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/357,258
• Time in Patent Office: 462 Days
• Field of Search: 257/417, 257/418, 257/419, 257/420, 257/415, 257/414, 73/517 A, 73/515, 73/517 R, 73/514.02, 73/514.15, 73/514.22, 73/514.29, 73/514.36, 73/514.21, 73/DIG. 1
• US Class Current: 257/415
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: Y10S 73/01 Vibration

Abstract

A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli'"'"'s force due to yaw rate, and the yaw rate is detected by this current.

Claims

1. A semiconductor yaw rate sensor comprising:

a semiconductor substrate;

a movable electrode having a beam structure disposed upon said semiconductor substrate at a specified interval therefrom;

a first fixed electrode for excitation use disposed via a specified gap with said movable electrode to cause vibration of said movable electrode at a specified cycle by means of electrostatic force; and

a second fixed electrode for current detection use provided on said semiconductor substrate opposing said movable electrode;

wherein when yaw rate to be detected, which has as an axis a direction intersecting a direction of excitation of said movable electrode, acts upon said movable electrode, said yaw rate is detected based on a change in current produced at said second fixed electrode by means of a change in relative position of said movable electrode and said second fixed electrode.

2. A semiconductor yaw rate sensor according to claim 1, wherein said movable electrode disposed at said specified interval upon said semiconductor substrate includes at least one portion of a beam structure body having a weight, which said yaw rate to be detected acts upon and displaces, and a beam supporting said weight, and wherein said beam structure body includes a doubly supported structure formed of at least two said beams.

3. A semiconductor yaw rate sensor according to claim 1, wherein a vibration range of said movable electrode is a range wherein opposing surface areas of said movable electrode and said second fixed electrode remain uniform.

4. A semiconductor yaw rate sensor according to claim 1, wherein said movable electrode is formed of a spindle configuration, and a lengthwise width of said movable electrode is longer than a width of said second fixed electrode.

5. A semiconductor yaw rate sensor according to claim 1, wherein said first fixed electrode is an electrode of the same height as said movable electrode and is disposed via said specified gap from said movable electrode.

6. A semiconductor yaw rate sensor according to claim 1, wherein said second fixed electrode includes a plurality of electrodes including an impurity diffusion layer formed on a surface portion of said semiconductor substrate opposing said movable electrode.

7. A semiconductor yaw rate sensor according to claim 1, wherein:

said movable electrode is an electrode of spindle configuration supported by a beam structure body;

said second fixed electrode for current detection use is an electrode including an impurity diffusion layer formed on a surface portion of said semiconductor substrate opposing said movable electrode at two sides of said movable electrode; and

a transistor composed of said movable electrode and said second fixed electrode, with both said movable electrode and said second fixed electrode being disposed such that a gate width of said transistor does not change even by means of vibration of said movable electrode insofar as said yaw rate to be detected is not produced.

8. A semiconductor yaw rate sensor according to claim 1, further comprising a transistor formed with said movable electrode, said semiconductor substrate and said second fixed electrode;

and

wherein an amount of displacement produced at said movable electrode in a case wherein said yaw rate to be detected is produced on an axis parallel to a plane of said semiconductor substrate in a direction intersecting a direction of vibration of said movable electrode is detected by a current change of said second fixed electrode.

9. A semiconductor yaw rate sensor according to claim 8, wherein said second fixed electrode includes at least two electrodes, and said yaw rate to be detected is detected by means of a change in current flowing mutually between said at least two electrodes.

10. A semiconductor yaw rate sensor according to claim 1, further comprising a transistor formed with said movable electrode, said semiconductor substrate and said second fixed electrode;

and

wherein an amount of displacement produced at said movable electrode in a case wherein said yaw rate to be detected is produced on an axis perpendicular to a plane of said semiconductor substrate in a direction intersecting a direction of vibration of said movable electrode is detected by a current change of said second fixed electrode.

11. A semiconductor yaw rate sensor according to claim 10, wherein said second fixed electrode includes at least two electrodes, and said yaw rate to be detected is detected by means of current change accompanying a change of an inversion region mutually between said at least two electrodes.

12. A semiconductor yaw rate sensor according to claim 1, wherein a main body portion of said movable electrode is formed so as to have at least one edge of linear configuration, said fixed electrode for current detection use includes at least two electrodes, and is formed so that one end of each of said at least two electrodes is disposed in a spindle configuration so as to engage said edge portion of said movable electrode.

13. A semiconductor yaw rate sensor according to claim 1, wherein said movable electrode is formed so as to have a pair of edges at opposing positions, and said second fixed electrode is suitably formed in correspondence with these respective end portions so as to respectively engage this pair of end portions.

14. A semiconductor yaw rate sensor according to claim 1, wherein:

said movable electrode is formed of a main body portion supported so as to freely vibrate by means of a plurality of beams, and a spindle-shaped member protruding into an outer periphery of said main body portion;

an excitation electrode is formed of said spindle-shaped member protruding from said main body portion, and said excitation electrode is disposed via a gap on said first fixed electrode established fixedly on said semiconductor substrate; and

said first fixed electrode includes a plurality of spindle-shaped members disposed in a comb-tooth configuration to sandwich said excitation electrode.

15. A semiconductor yaw rate sensor according to claim 1, wherein said semiconductor substrate includes a lower electrode in a region opposing said movable electrode and in a region wherein at least said second fixed electrode does not exist, and said movable electrode and said lower electrode are provided with equal potential such that electrostatic attraction force is not exerted between said movable electrode and said lower electrode.

16. A semiconductor yaw rate sensor according to claim 1, wherein:

said movable electrode includes a main body portion and a spindle-shaped member protruding to one side of said main body portion;

said first fixed electrode includes a fixed electrode member disposed in a position on both sides of said spindle-shaped member forming said movable electrode;

a thickness of said fixed electrode member differs from a thickness of said movable electrode spindle-shaped member; and

opposing surface area of said movable electrode and said fixed electrode member does not change even if said movable member is displaced.

17. A semiconductor yaw rate sensor comprising:

a semiconductor substrate;

a movable electrode disposed at a first interval above a surface of said semiconductor substrate, and supported so as to be freely displacable via a beam structure body;

a fixed electrode for excitation use disposed at a second interval above said semiconductor substrate surface, and disposed via a specified gap with said movable electrode to utilize static electricity to cause vibration of said movable electrode; and

source and drain electrodes formed by means of an impurity diffusion layer on a surface portion of said semiconductor substrate at positions opposing said movable electrode;

wherein a transistor is formed by said movable electrode, said semiconductor substrate and said source and drain electrodes, a current change is produced between said source and drain electrodes by means of displacement of said movable electrode produced when said fixed electrode vibrates said movable electrode at a specified cycle, and yaw rate is detected by means of said current change.

18. A semiconductor yaw rate sensor according to claim 17, wherein said movable electrode disposed at said first interval above said semiconductor substrate includes at least one portion of a beam structure body having a weight which said yaw rate to be detected acts upon and displaces and a beam supporting said weight, and said beam structure body includes a doubly supported structure by means of at least two of said beams.

19. A semiconductor yaw rate sensor according to claim 17, wherein said movable electrode is formed in a spindle configuration, and a lengthwise width of said movable electrode of spindle configuration is disposed in a state to be longer than a width of said source and drain electrodes.

20. A semiconductor yaw rate sensor according to claim 17, wherein said fixed electrode is an electrode positioned above said semiconductor substrate, disposed at said second interval from said semiconductor substrate surface, and also at an equal height as said movable electrode, and is disposed via said specified gap with said movable electrode.

21. A semiconductor yaw rate sensor according to claim 17, wherein said movable electrode is formed in a spindle configuration, and said source and drain electrodes are disposed such that a gate width of said transistor does not change even by means of vibration of said movable electrode insofar as said yaw rate to be detected is not produced.

22. A semiconductor yaw rate sensor according to claim 17, wherein an amount of displacement produced at said movable electrode in a state wherein said yaw rate to be detected is produced on an axis perpendicular to a plane of said semiconductor substrate is detected by a current change accompanying a change of an inversion area mutually between said movable electrode and said source and drain electrodes.

23. A semiconductor yaw rate sensor according to claim 17, wherein a main body portion of said movable electrode is structured so as to have at least one edge of linear configuration, and said source and drain electrodes are formed so that one end of each is arranged in a spindle configuration so as to engage said edge portion of said movable electrode.

24. A semiconductor yaw rate sensor according to claim 17, wherein said movable electrode is formed so as to have a pair of edges at opposing positions, and said source and drain electrodes are formed in correspondence with said edges so as to respectively engage this pair of edges, said yaw rate is detected by means of differential in drain currents.

25. A semiconductor yaw rate sensor according to claim 17, wherein:

said movable electrode includes a main body portion supported so as to be freely vibrated by means of a plurality of beams, and a spindle-shaped member protruding into the outer periphery of said main body portion, an excitation electrode is formed by means of said spindle-shaped member protruding from said main body portion, and said excitation electrode is disposed via a gap on said fixed electrode established fixedly on said semiconductor substrate; and

said fixed electrode includes a plurality of spindle-shaped members disposed in a comb-tooth configuration to sandwich said excitation electrode.

26. A semiconductor yaw rate sensor according to claim 17, wherein said semiconductor substrate includes a lower electrode disposed in a region opposing said movable electrode and in a region wherein at least said source and drain electrodes do not exist, and said movable electrode and said lower electrode are provided with equal potentials such that electrostatic attraction force is not exerted therebetween.

27. A semiconductor yaw rate sensor according to claim 17, wherein said movable electrode includes a main body portion and a spindle-shaped member protruding to one side of said main body portion, said fixed electrode includes a fixed electrode member disposed in a position on both sides of said spindle-shaped member forming said movable electrode, a thickness of said fixed electrode member differs from a thickness of said movable electrode spindle-shaped member, and opposing surface areas of said movable electrode and said fixed electrode member do not change even if said movable member is displaced.