Electrically modulatable thermal radiant source and method for manufacturing the same

• US 5,500,569 A
• Filed: 03/31/1994
• Issued: 03/19/1996
• Est. Priority Date: 04/07/1993
• Status: Expired due to Term

• Current Assignee: Instrumentarium Corporation, Vaisala OY
• Original Assignee: Instrumentarium Corporation, Vaisala OY
• Inventors: Korhonen, Anssi, Lehto, Ari, Blomberg, Martti, Orpana, Markku
• Primary Examiner(s): O'Shea, Sandra L.
• Assistant Examiner(s): ESSERMAN, MATTHEW
• Application Number:
  US08/220,696
• Time in Patent Office: 719 Days
• Field of Search: 313/578, 313/522
• US Class Current: 313/578
• CPC Class Codes: H01K 1/02 Incandescent bodies
• CPC Class Codes: H01K 1/04 characterised by the material thereof
• CPC Class Codes: H01K 3/02 Manufacture of incandescent bodies
• CPC Class Codes: H01K 7/00 Lamps for purposes other than general lighting H01K9/00 - H01K13/00 take precedence

Abstract

A radiant source including an essentially planar substrate having a well or hole formed therein. At least one incandescent filament is mounted to the substrate and aligned at the well or hole. Contact pads are formed onto the substrate, to both ends of the incandescent filament, and feed electric current to the incandescent filament. Furthermore, each incandescent filament is doped with phosphorus to an impurity concentration of at least 5×10¹⁹ atoms/cm³.

Claims

1. An electrically modulatable radiant source comprising:

an essentially planar substrate having

a well or hole formed into the substrate,

at least one incandescent filament mounted to the substrate, said filament being aligned at said well or hole,

contact pads formed onto the substrate, to both ends of the incandescent filament, for feeding electric current to the incandescent filament, and wherein

each of the incandescent filaments is doped with phosphorus to an impurity concentration of at least 5×

10¹⁹ atoms/cm³.

2. A radiant source as defined in claim 1 wherein the substrate comprises polycrystalline silicon, and each incandescent filament doped with phosphorus to an impurity concentration of at least 5×

10¹⁹ atoms/cm³ is made of polysilicon.

3. A radiant source as defined in claim 1 wherein least two of the incandescent filaments are electrically connected in series.

4. A radiant source as defined in claim 1, wherein at least two of the incandescent filaments are electrically connected in parallel.

5. A radiant source as defined in claim 1, wherein each of the incandescent filaments are conformantly enclosed under a contiguous silicon nitride layer for parts floating free from the substrate.

6. A radiant source as defined in claim 4 wherein the incandescent filaments are mechanically interconnected to each other.

7. A radiant source as defined in claim 6, wherein the incandescent filaments are mechanically interconnected to each other by means of a contiguous silicon nitride bridge (6).

8. A radiant source as defined in claim 6, wherein the incandescent filaments are mechanically interconnected to each other by means of a contiguous silicon nitride bridge having openings therein.

9. A radiant source as defined in claim 1, wherein each of the incandescent filaments is permitted to freely communicate with ambient air.

10. A radiant source as defined in claim 1, wherein the incandescent filaments are coated with a metal oxide layer.

11. A radiant source as defined in claim 1, wherein said substrate has a well formed therein, and said well has a depth of at least 10 μ

m.

12. A radiant source as defined in claim 1, wherein said substrate has a well formed therein, and said well has a depth of between 50-300 μ

m.

13. A radiant source as defined in claim 1, wherein each of the incandescent filaments is doped with phosphorus to an impurity concentration of 8×

10¹⁹ atoms/cm³.