E-O probe

• US 5,500,587 A
• Filed: 09/09/1993
• Issued: 03/19/1996
• Est. Priority Date: 09/10/1992
• Status: Expired due to Fees

• Current Assignee: Hamamatsu Photonics KK
• Original Assignee: Hamamatsu Photonics KK
• Inventors: Takahashi, Hironori, Aoshima, Shinichiro, Hirano, Isuke
• Primary Examiner(s): Wieder, Kenneth A.
• Assistant Examiner(s): KHOSRAVI, KOURO
• Application Number:
  US08/118,257
• Time in Patent Office: 922 Days
• Field of Search: 324/753, 324/96, 324/752, 359/247, 359/248, 359/263
• US Class Current: 324/96
• CPC Class Codes: G01R 1/071 containing electro-optic elements

Abstract

An E-O probe with improved spatial resolution has a light transmissive base part, an electro-optic material which is fixed to the base part and has an index of refraction which varies in response to an electrical field from a measured object, and a mirror which is fixed to the electro-optic material and reflects an incident beam penetrating the base part and the electro-optic material. The mirror is formed to be smaller than the incident beam in diameter. The electro-optic material is formed very thin.

Claims

1. An E-O probe for measuring a voltage by applying a beam of radiation, comprising:

a base part which is penetrated by said beam of radiation;

an electro-optic material which is attached to an end face of said base part, having an index of refraction which varies in response to an intensity of an electric field; and

a reflecting face formed on an end face of said electro-optic material, which reflects said beam of radiation penetrating said electro-optic material from said base part and incident on said reflecting face, wherein said beam of radiation has a predetermined thickness and the size of said reflecting face is such that a substantially entire area of said reflecting face is irradiated by said beam of radiation having said predetermined thickness, and wherein said beam of radiation is a radiation focused by an optical system including an objective lens having a numerical aperture, NA, and the size of said reflecting face is such that said substantially entire area of said reflecting face is enclosable by a circle having a diameter approximately equal to a theoretical minimum beam diameter, (2λ

)/(π

NA), wherein λ

denotes a wave length of said beam of radiation.

2. An E-O probe according to claim 1, wherein a thickness of said electrooptical material is not larger than the same order of said theoretical minimum beam diameter, (2λ

)/(π

NA).

3. An E-O probe according to claim 1, wherein said beam of radiation has an approximately circular cross section and the diameter of said approximately circular cross section is the same order of said theoretical minimum beam diameter, (2λ

)/(π

NA).

4. An E-O probe according to claim 1, wherein said reflecting face is formed of a mirror.

5. An E-O probe according to claim 4, wherein said mirror is formed by a metal vacuum evaporation deposit method.

6. An E-O probe according to claim 4, further comprising a radiation absorbing layer around said mirror, said layer preventing a reflection of said beam of radiation directed to an outside of said mirror.

7. An E-O probe according to claim 1:

wherein said reflecting face is a mirror disposed on said end face of said electro-optic material, said mirror having a mirror surface and a mirror area; and

wherein said E-O probe further comprises;

a light absorbing layer which is disposed between a surface of said mirror and said electro-optic material to prevent said incident beam from being reflected, and has an open area that is enclosable by said circle having a diameter approximately equal to said theoretical minimum beam diameter, wherein said mirror surface appears through said open area.

8. An E-O probe according to claim 1:

wherein said reflecting face is a mirror disposed on said end face of said electro-optic material and and having a mirror surface and a mirror area; and

wherein said E-O probe further comprises;

a light diffusing layer which is disposed between said mirror surface and said end face of said electro-optic material to diffuse said incident beam, and has an open area which is enclosable by said circle having a diameter approximately equal to said theoretical minimum beam diameter, wherein said surface of said mirror appears through said open area.

9. An E-O probe according to claim 8, wherein said light diffusing layer is a sputter etched light diffusing layer.

10. An E-O probe for measuring a voltage by applying a beam of radiation, comprising:

a base part which is penetrated by said beam of radiation;

an electro-optic material which is attached to an end face of said base part, having an index of refraction which varies in response to an intensity of an electric field; and

a reflecting face formed on an end face of said electro-optic material, which reflects said beam of radiation penetrating said electro-optic material from said base part and incident on said reflecting face, wherein said beam of radiation has a predetermined thickness and the size of said reflecting face is such that a substantially entire area of said reflecting face is irradiated by said beam of radiation having said predetermined thickness, wherein said end face of said electro-optic material is substantially flat and extends across a larger area than said reflecting face, said reflecting area being located on said end face of said electro-optic material, and wherein said beam of radiation is a radiation focused by an optical system including an objective lens having a numerical aperture, NA, and the size of said reflecting face is such that said substantially entire area of said reflecting face is enclosable by a circle having a diameter approximately equal to a theoretical minimum beam diameter, (2λ

)/(π

NA), wherein λ

denotes a wave length of said beam of radiation.

11. An E-O probe according to claim 10, wherein a thickness of said electro-optic material is not larger than the same order of a theoretical minimum beam diameter, (2λ

)/(π

NA).

12. An E-O probe according to claim 10, wherein said beam of radiation has an approximately circular cross section and the diameter of said approximately circular cross section is the same order of said theoretical minimum beam diameter, (2λ

)/(π

NA).

13. An E-O probe according to claim 10, wherein said reflecting face is formed of a mirror.

14. An E-O probe according to claim 13, wherein said mirror is formed by a metal vacuum evaporation deposit method.

15. An E-O probe according to claim 13, further comprising a radiation absorbing layer around said mirror, said layer preventing reflection of said beam of radiation directed to an outside of said mirror.