Overvoltage clamp and desaturation detection circuit

• US 5,500,616 A
• Filed: 01/13/1995
• Issued: 03/19/1996
• Est. Priority Date: 01/13/1995
• Status: Expired due to Term

• Current Assignee: IXYS Corporation (Littelfuse Incorporated)
• Original Assignee: IXYS Corporation (Littelfuse Incorporated)
• Inventors: Ochi, Sam S.
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): ENGLUND, TERRY LEE
• Application Number:
  US08/372,638
• Time in Patent Office: 431 Days
• Field of Search: 327/309, 327/310, 327/312, 327/313, 327/314, 327/381, 327/380, 327/502, 327/375, 327/376, 327/374, 327/326, 327/327, 327/328, 327/379, 327/421, 327/422, 327/427, 327/432 , 327/434, 327/438, 361/18, 361/86, 361/91
• US Class Current: 327/310
• CPC Class Codes: H03K 17/0822 in field-effect transistor switches
• CPC Class Codes: H03K 17/0828 in composite switches

Abstract

An apparatus for suppressing voltage transients and detecting desaturation conditions in power transistor systems. A first transistor, usually a power transistor, has a first terminal, a second terminal, a drive terminal, and an avalanche breakdown voltage rating between the first mad second terminals. The cathode of a first diode is coupled to the first terminal of the first transistor. The first diode has a reverse breakdown voltage which is less than the avalanche breakdown voltage rating of the first transistor. The anode of a second diode is coupled to the anode of the first diode, and the cathode of the second diode is coupled to the drive terminal of the first transistor. Driver circuitry is also coupled to the drive terminal, and provides a drive signal to the first transistor. An RC network comprising a first resistor and a first capacitor is coupled to the driver circuitry. The base terminal of a second transistor is coupled to the driver circuitry by means of the RC network. The cathode of a third diode is coupled to the emitter of the second transistor and the anodes of the first and second diodes. The third diode has a reverse breakdown voltage rating. The anode of the third diode is coupled to ground. A comparator circuit coupled to the anode of the third diode senses desaturation conditions of the first transistor.

Claims

1. An apparatus for suppressing voltage transients and for detecting desaturation conditions in power transistor systems, comprising:

a first transistor having a first terminal, a second terminal, a drive terminal, an avalanche breakdown voltage rating between the first and second terminals, the first terminal for coupling to a load, and the second terminal being coupled to ground;

a first diode having an anode and a cathode, the cathode of the first diode being coupled to the first terminal of the first transistor, the first diode having a reverse breakdown voltage which is less than the avalanche breakdown voltage rating;

a second diode having an anode and a cathode, the anode of the second diode being coupled to the anode of the first diode, and the cathode of the second diode being coupled to the drive terminal of the first transistor;

driver circuitry coupled to the drive terminal of the first transistor, the driver circuitry for providing a drive signal to the first transistor;

a first resistor;

a second transistor having a collector terminal, an emitter terminal, and a base terminal, the base terminal of the second transistor being coupled to the driver circuitry by means of the first resistor, the collector terminal for coupling to a power supply;

a first capacitor coupled between the base terminal of the second transistor and ground;

a third diode having an anode, a cathode, and a reverse breakdown voltage rating, the cathode of the third diode being coupled to the emitter of the second transistor, the cathode of the third diode also being coupled to the anodes of the first and second diodes, and the anode of the third diode being coupled to ground; and

a comparator circuit coupled between the anode of the third diode and are reference voltage for sensing a desaturation condition of the first transistor.

2. The apparatus of claim 1 wherein the first diode has a reverse breakdown voltage of 0.9*V_B, wherein V_B is the avalanche breakdown voltage rating between the first and second terminals of the first transistor.

3. The apparatus of claim 1 wherein the first transistor is a power metal oxide semiconductor field effect transistor, the first terminal of the first transistor being a drain terminal, the second terminal of the first transistor being a source terminal, and the drive terminal of the first transistor being a gate terminal.

4. The apparatus of claim 1 wherein the first transistor is a power metal oxide semiconductor controlled thyristor, the first terminal of the first transistor being a drain terminal, the second terminal of the first transistor being a source terminal, and the drive terminal of the first transistor being a gate terminal.

5. The apparatus of claim 1 wherein the first transistor is an insulated gate bipolar power transistor, the first terminal of the first transistor being a collector terminal, the second terminal of the first transistor being an emitter terminal, and the drive terminal of the first transistor being a base terminal.

6. The apparatus of claim 1 wherein the first transistor is a bipolar power transistor, the first terminal of the first transistor being a collector terminal, the second terminal of the first transistor being an emitter terminal, and the drive terminal of the first transistor being a base terminal.

7. The apparatus of claim 1 wherein the driver circuitry and the comparator circuit are fabricated in an integrated circuit.

8. The apparatus of claim 7 wherein the integrated circuit comprises a standard complementary metal oxide semiconductor (CMOS) integrated circuit.

9. The apparatus of claim 1 wherein the first transistor and the first diode are fabricated on the same semiconductor substrate.

10. The apparatus of claim 1 wherein the first and third diodes comprise zener diodes.

11. An apparatus for suppressing voltage transients and for detecting desaturation conditions in power transistor systems, comprising:

a first transistor having a first terminal, a second terminal, a drive terminal, an avalanche breakdown voltage rating between the first and second terminals, the first terminal for coupling to a load, and the second terminal being coupled to ground;

a first diode having an anode and a cathode, the cathode of the first diode being coupled to the first terminal of the first transistor, the first diode having a reverse breakdown voltage which is less than the avalanche breakdown voltage rating;

a second diode having an anode and a cathode, the anode of the second diode being coupled to the anode of the first diode, and the cathode of the second diode being coupled to the drive terminal of the first transistor;

driver circuitry coupled to the drive terminal of the first transistor, the driver circuitry for providing a drive signal to the first transistor;

a first resistor;

a second transistor having a collector terminal, an emitter terminal, and a base terminal, the base terminal of the second transistor being coupled to the driver circuitry by means of the first resistor, the collector terminal for coupling to a power supply;

a first capacitor coupled between the base terminal of the second transistor and ground, the first resistor and the first capacitor forming a first RC network by which a delay in the enabling of the apparatus is determined;

a third diode having an anode and a cathode, the anode of the third diode being coupled to the emitter terminal of the second transistor;

a second resistor;

a third resistor;

a fourth resistor;

a fourth diode having an anode, a cathode, and a reverse breakdown voltage rating, the cathode of the fourth diode being coupled to the cathode of the third diode by means of the second resistor, the cathode of the fourth diode also being coupled to the anodes of the first and second diodes by means of the third resistor, and the anode of the fourth diode being coupled to ground by means of the fourth resistor;

a second capacitor coupled between the anode of the fourth diode and ground, the fourth resistor and the second capacitor forming part of a second RC network which determines the time in which the apparatus responds to a desaturation condition of the first transistor; and

a comparator circuit coupled between the anode or the fourth diode and a reference voltage for sensing the desaturation condition.

12. The apparatus of claim 11 wherein the first diode has a reverse breakdown voltage of 0.9*V_B, wherein V_B is the avalanche breakdown voltage rating between the first and second terminals of the first transistor.

13. The apparatus of claim 11 wherein the first transistor is a power metal oxide semiconductor field effect transistor, the first terminal of the first transistor being a drain terminal, the second terminal of the first transistor being a source terminal, and the drive terminal of the first transistor being a gate terminal.

14. The apparatus of claim 11 wherein the first transistor is a power metal oxide semiconductor controlled thyristor, the first terminal of the first transistor being a drain terminal, the second terminal of the first transistor being a source terminal, and the drive terminal of the first transistor being a gate terminal.

15. The apparatus of claim 11 wherein the first transistor is an insulated gate bipolar power transistor, the first terminal of the first transistor being a collector terminal, the second terminal of the first transistor being an emitter terminal, and the drive terminal of the first transistor being a base terminal.

16. The apparatus of claim 11 wherein the first transistor is a bipolar power transistor, the first terminal of the first transistor being a collector terminal, the second terminal of the first transistor being an emitter terminal, and the drive terminal of the first transistor being a base terminal.

17. The apparatus of claim 11 wherein the driver circuitry and the comparator circuit are fabricated in an integrated circuit.

18. The apparatus of claim 17 wherein the integrated circuit comprises a standard complementary metal oxide semiconductor (CMOS) integrated circuit.

19. The apparatus of claim 11 wherein the first transistor and the first diode are fabricated on the same semiconductor substrate.

20. The apparatus of claim 11 wherein the first and fourth diodes comprise zener diodes.

21. An apparatus for suppressing voltage transients and for detecting desaturation conditions in a power transistor system employing a first transistor having a first terminal for coupling to a load, a second terminal for coupling to ground, a drive terminal, and an avalanche breakdown voltage rating, the apparatus comprising:

a first diode having an anode and a cathode, the cathode of the first diode being coupled to the first terminal of the first transistor, the first diode having a reverse breakdown voltage which is less than the avalanche breakdown voltage rating;

a second diode having an anode and a cathode, the anode of the second diode being coupled to the anode of the first diode, and the cathode of the second diode being coupled to the drive terminal of the first transistor;

driver circuitry coupled to the drive terminal of the first transistor, the driver circuitry for providing a drive signal to the first transistor;

a first resistor;

a second transistor having a collector terminal, an emitter terminal, and a base terminal, the base terminal of the second transistor being coupled to the driver circuitry by means of the first resistor the collector terminal for coupling to a power supply;

a first capacitor coupled between the base terminal of the second transistor and ground;

a third diode having an anode, a cathode, and a reverse breakdown voltage rating, the cathode of the third diode being coupled to the emitter of the second transistor, the cathode of the third diode also being coupled to the anodes of the first and second diodes, and the anode of the third diode being coupled to ground; and

a comparator circuit coupled between the anode of the third diode and a reference voltage for sensing a desaturation condition of the first transistor.

22. The apparatus of claim 21 wherein the first diode has a reverse breakdown voltage of 0.9*V_B, wherein V_B is the avalanche breakdown voltage rating between the first and second terminals of the first transistor.

23. The apparatus of claim 21 wherein the driver circuitry and the comparator circuit are fabricated in an integrated circuit.

24. The apparatus of claim 23 wherein the integrated circuit comprises a standard complementary metal oxide semiconductor (CMOS) integrated circuit.

25. The apparatus of claim 21 wherein the first transistor and the first diode are fabricated on the same semiconductor substrate.

26. The apparatus of claim 21 wherein the first and third diodes comprise zener diodes.