Wafer bonding of light emitting diode layers
DC CAFCFirst Claim
1. A light emitting semiconductor device comprising:
- an arrangement of semiconductor layers for generating light in response to a conduction of current;
an optically transparent wafer-bond layer coupled to said semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, including a conductive ohmic bond to said semiconductor layers and being mechanically robust; and
electrode means for applying a current to said arrangement of semiconductor layers.
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Abstract
A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.
239 Citations
16 Claims
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1. A light emitting semiconductor device comprising:
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an arrangement of semiconductor layers for generating light in response to a conduction of current; an optically transparent wafer-bond layer coupled to said semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, including a conductive ohmic bond to said semiconductor layers and being mechanically robust; and electrode means for applying a current to said arrangement of semiconductor layers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A light emitting semiconductor device comprising:
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an arrangement of semiconductor layers for generating light in response to a conduction of current; an optically transparent, conductive ohmic wafer-bond layer coupled to the semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, the wafer-bond layer directly contacting the arrangement of semiconductor layers without any intervening metallic layer contact; and contacts for applying a current to the arrangement of semiconductor layers. - View Dependent Claims (9, 10, 11)
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12. A light emitting semiconductor device comprising:
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an arrangement of semiconductor layers for generating light in response to a conduction of current; an optically transparent wafer-bond layer coupled to said semiconductor layers, an interface of said wafer-bond layer with the semiconductor layers exhibiting properties characteristic of layers that have undergone wafer bonding, including being mechanically robust; and electrode means for applying a current to said arrangement of semiconductor layers. - View Dependent Claims (13, 14, 15, 16)
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Specification