Force sensor, temperature sensor and temperature/force sensor device

• US 5,503,034 A
• Filed: 11/18/1993
• Issued: 04/02/1996
• Est. Priority Date: 11/19/1992
• Status: Expired due to Term

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: Amano, Akira, Matsuzaki, Kazuo, Sakai, Toshiaki
• Primary Examiner(s): Chilcot, Richard
• Assistant Examiner(s): Biegel, Ronald
• Application Number:
  US08/154,025
• Time in Patent Office: 866 Days
• Field of Search: 73/717, 73/723, 73/862.625, 73/715, 73/754, 313/309, 313/336, 313/357
• US Class Current: 73/862.473
• CPC Class Codes: G01D 5/48 using wave or particle radiation means G01D5/26 takes precedence
• CPC Class Codes: G01L 1/005 by electrical means and not provided for in G01L1/06 - G01L1/22
• CPC Class Codes: G01L 11/00 Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
• CPC Class Codes: G01P 15/0894 by non-contact electron transfer, i.e. electron tunneling
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

A force sensor comprises a substrate having a movable unit which is displaceable in response to one of an applied force and acceleration; an electron emission unit having a cathode for emitting electrons in accordance with an applied potential; an electron absorption unit having an anode for capturing electrons emitted from the cathode, the electron emission unit and the electron absorption unit being formed on a surface of the substrate; and a control unit for, on the basis of the displacement of the movable unit, controlling the electron capturing efficiency of the anode with respect to electrons emitted from the cathode.

Claims

1. A force sensor comprising:

a substrate shaped to include a movable unit which is displaceable in response to one of an applied force and acceleration;

an electron emission unit having a cathode for emitting electrons in accordance with an applied potential;

an electron absorption unit having an anode for capturing electrons emitted from said cathode, said electron emission unit and said electron absorption unit being laterally spaced in a common plane and formed on said substrate; and

control means for controlling the electron capturing efficiency of said anode with respect to electrons emitted from said cathode to be dependent on displacement of said movable unit out of said common plane.

2. A force sensor according to claim 1, wherein an auxiliary anode for forming an electric field is formed between said cathode and said anode, said electric field attracting electrons emitted from said cathode to direct the electrons toward said anode.

3. A force sensor according to claim 1, wherein one of said electron emission unit and said electron absorption unit is formed on said movable unit, and said control means comprises electron path displacement means for displacing an electron path from said cathode to said anode on the basis of the displacement of said movable unit, thereby controlling said electron capturing efficiency.

4. A force sensor according to claim 1, wherein said control means comprises a shielding unit which is disposed on said movable unit and which changes a state of shielding an electron path from said cathode to said anode on the basis of the displacement of said movable unit, thereby controlling said electron capturing efficiency.

5. A force sensor according to claim 1, further comprising an electric field defining electrode for defining the electric field distribution in the vicinity of said anode.

6. A force sensor according to claim 1, further comprising a bias electrode for displacing said movable unit by means of at least one of an electrostatic attractive force and an electrostatic repulsive force.

7. A force sensor according to claim 1, wherein said movable unit comprises a diaphragm unit which is formed by thinning said substrate at a location between said electron emission unit and said electron absorption unit and which can be deformed by an applied force or acceleration, said diaphragm unit itself being said control means which displaces to block an electron path from said cathode to said anode, thereby controlling said electron capturing efficiency.

8. A force sensor according to claim 7, wherein said cathode of said electron emission unit is formed at the center on said movable unit, and said anode of said electron absorption unit consists of a plurality of independent anode units for the X-axis and Y-axis, said anode units being formed around said movable unit and rotationally symmetric with a step of 90 deg. in the circumferential direction.

9. A force sensor according to claim 7, wherein said anode of said electron absorption unit comprises a plurality of independent anode units for the X-axis and Y-axis, said anode units being formed on said movable unit and rotationally symmetric with a step of 90 deg. in the circumferential direction, and said cathode of said electron emission unit is formed around said movable unit.

10. A force sensor according to claim 8, wherein an anode unit dedicated to the Z-axis is formed at the middle of said anode unit for the X-axis and said anode unit for the Y-axis.

11. A force sensor according to claim 8, wherein said cathode has a comb-like annular shape.

12. A force sensor according to claim 1, wherein said movable unit comprises a one-end-supported movable unit which projects in a beam-like manner from a thick portion of said substrate and which can be deformed by an applied pressure.

13. A force sensor according to claim 1, further comprising:

a second electron emission unit having a second cathode for emitting electrons in accordance with an applied potential;

a second electron absorption unit having a second anode for capturing electrons emitted from said second cathode, said second electron emission unit and said second electron absorption unit being formed on the back of said movable unit; and

a filling material which is filled under said second electron emission unit and said second electron absorption unit and which applies a force to said second electron emission unit and said second electron absorption unit in accordance with a force or acceleration which is applied from the surface side of said substrate.

14. A force sensor according to claim 1, wherein said substrate is a semiconductor substrate.

15. A pressure detection type temperature sensor wherein said force sensor according to claim 1 is provided with temperature-pressure conversion means which applies a pressure corresponding to a temperature to said movable unit, said temperature-pressure conversion means being a gas filled unit which is on the back of said movable unit, which is filled with a gas, and which applies a volume change of said gas in the form of a pressure change to said movable unit, said volume change being due to a temperature change.

16. A temperature/force sensor device wherein said force sensor according to claim 1 and said temperature sensor according to claim 15 are on the same substrate.

17. A temperature/force sensor device according to claim 16, wherein the cathode in the side of said force sensor and the cathode in the side of said temperature sensor are commonly used in said force sensor side and said temperature sensor side.

18. A temperature/force sensor device according to claim 15, wherein said gas filled in said gas filled space is an inert gas.