Method for forming an electrostatically force balanced silicon accelerometer

• US 5,503,285 A
• Filed: 07/26/1993
• Issued: 04/02/1996
• Est. Priority Date: 07/26/1993
• Status: Expired due to Fees

• Current Assignee: Litton Systems Incorporated (Northrop Grumman Corporation)
• Original Assignee: Litton Systems Incorporated (Northrop Grumman Corporation)
• Inventors: Warren, Keith O.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/097,084
• Time in Patent Office: 981 Days
• Field of Search: 156/628.1, 156/630.1, 156/633.1, 156/645.1, 156/647.1, 156/657.1, 156/659.11, 156/662.1, 156/651.1, 73/517 R, 437/225, 437/228, 437/235, 437/241, 437/226, 216/2, 216/33, 216/99
• US Class Current: 216/2
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends

Abstract

An accelerometer is fabricated by forming a proofmass and at least one associated hinge in a silicon substrate by ion implantation and the formation of an oxide support layer below the proofmass, subsequently integrally bonding two complementary proofmass and substrate structures together, and then removing the oxide support layer to leave the proofmass supported by the hinge within the body of silicon material. The proofmass may be electrically connected to a lead extending through an etched recess in one of the substrates; and the proofmass may be electrically isolated or separated from the substrates by an oxide layer and by a change in conductivity type of the semiconductor material where the hinge is structurally mounted to the substrates.

Claims

1. A method for forming a solid state accelerometer comprising the steps of:

forming a proofmass in a substrate;

forming a support layer in the substrate between the proofmass and the substrate;

forming at least one hinge selectively attaching the proofmass to the substrate;

bonding two substantially complementary proofmasses and associated substrate structures together, with at least one of said structures including said hinge; and

selectively removing the support layer located in between the proofmass structures and the surrounding substrate.

2. The method of claim 1 in which said support layer is formed of an oxide layer and further comprising the step of ion implanting the oxide into the substrate to form a buried oxide layer.

3. The method of claim 1 in which the two complementary proofmasses and substrate structures are formed on a single wafer and further comprising the step of cutting the wafer to separate the two complementary structures.

4. The method as described in claim 1 in which the hinge is formed by a plurality of tabs extending between the proofmass and the surrounding substrate and further comprising the step of selectively removing portions of the hinge to create a plurality of tabs extending between the proofmass and the surrounding substrate.

5. A method as defined in claim 1 wherein both of the two complementary proofmasses and substrate structures have hinges and wherein these two hinges are bonded together to form a single hinge.

6. A method as defined in claim 1 wherein only one of said two complementary proofmasses and substrate structures is formed with a hinge.

7. A method as defined in claim 1 wherein said support layer is etched away to free said proofmass so that it is supported from the substrate only by said hinge.

8. A method as defined in claim 1 wherein said method includes electrically connecting a lead to the proofmass.

9. A method as defined in claim 1 wherein said method includes the steps of electrically separating or isolating said proofmass from the substrates by changing the conductivity type of the semiconductor material where the hinge is physically mounted to the substrate, and by providing an insulating oxide layer to complete the isolation or separation.

10. The method of claim 1, wherein the step of forming a support layer further comprises the steps of

forming a first oxide layer between the proofmass and the substrate;

and

providing an associated substrate having a second oxide layer.

11. The method of claim 10, wherein the step of forming at least one hinge further comprises the steps of

disposing a nitride pattern of varying thicknesses on the proofmass;

disposing a resist pattern having trenches on the second oxide layer; and

etching the proofmass and associated substrate.

12. The method of claim 11, wherein the first oxide layer includes phospho-silicate glass.