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Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material provided on a support slice

  • US 5,504,036 A
  • Filed: 05/23/1995
  • Issued: 04/02/1996
  • Est. Priority Date: 05/24/1994
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing semiconductor devices whereby semiconductor elements and conductor tracks are formed on a first side of a semiconductor slice comprising a layer of semiconductor material lying on an insulating layer, after which the semiconductor slice is fastened with this first side to a support slice, and after which material is removed from the semiconductor slice from the other, second side until the insulating layer has been exposed, during which method the insulating layer is provided with contact windows in which conductive elements are provided which are connected to the semiconductor elements, characterized in that the insulating layer is provided with contact windows and the conductive elements are provided in the contact windows from the first side of the semiconductor slice before the latter is fastened to the support slice.

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