Method of manufacturing semiconductor devices with semiconductor elements formed in a layer of semiconductor material provided on a support slice

• US 5,504,036 A
• Filed: 05/23/1995
• Issued: 04/02/1996
• Est. Priority Date: 05/24/1994
• Status: Expired due to Term

• Current Assignee: Adeia Semiconductor Technologies LLC (f/k/a Invensas Corporation) (Adeia Inc.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Dekker, Ronald, Maas, Henricus G. R., van den Einden, Wilhelmus T. A. J.
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): Bilodeau, Thomas G.
• Application Number:
  US08/447,597
• Time in Patent Office: 315 Days
• Field of Search: 437/226, 437/183, 437/187, 437/474, 437/901, 437/921, 216/2, 148/DIG. 12
• US Class Current: 438/666
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: Y10S 148/012 : Bonding, e.g. electrostatic for strain gauges

Abstract

A method is provided of manufacturing a semiconductor device whereby semiconductor elements (5) and conductor tracks (14) are formed on a first side (2) of a semiconductor slice (1) which is provided with a layer of semiconductor material (4) disposed on an insulating layer (3). Then the semiconductor slice (1) is fastened with said first side (2) to a support slice (15), after which material is removed from the semiconductor slice (1) from the other, second side (17) until the insulating layer (3) has become exposed. The insulating layer (3) is provided with contact windows (18) in which conductive elements (19) are provided. This is done from the first side (2) of the semiconductor slice (1) before the latter is fastened to the support slice (15). The semiconductor elements (5) are externally contacted with a contact wire (20) via the conductive elements (19). The contact windows (18) and the conductive elements (19) may be formed during process steps which are carried out for manufacturing the semiconductor elements.

Claims

1. A method of manufacturing semiconductor devices whereby semiconductor elements and conductor tracks are formed on a first side of a semiconductor slice comprising a layer of semiconductor material lying on an insulating layer, after which the semiconductor slice is fastened with this first side to a support slice, and after which material is removed from the semiconductor slice from the other, second side until the insulating layer has been exposed, during which method the insulating layer is provided with contact windows in which conductive elements are provided which are connected to the semiconductor elements, characterized in that the insulating layer is provided with contact windows and the conductive elements are provided in the contact windows from the first side of the semiconductor slice before the latter is fastened to the support slice.

2. A method as claimed in claim 1, characterized in that after the formation of the contact windows in the insulating layer a conductive layer is deposited on the first side of the semiconductor slice, in which subsequently both the conductor tracks and the conductive elements are formed by patterning the conductive layer.

3. A method as claimed in claim 2, characterized in that the layer of conductive material is deposited on a conductive base layer after which the conductor tracks and the conductive elements are formed by patterning both the conductive layer and the base layer.

4. A method as claimed in claim 2, characterized in that the contact windows are provided with an auxiliary layer on their bottom before the conductive layer is deposited.

5. A method as claimed in claim 4, characterized in that, after the insulating layer has been exposed, the conductive layer inside the contact windows is also exposed.

6. A method as claimed in claim 3, characterized in that, after the insulating layer has been exposed, the conductive layer inside the contact windows is also exposed.