Method for fabricating a DMD spatial light modulator with a hardened hinge

• US 5,504,614 A
• Filed: 01/31/1995
• Issued: 04/02/1996
• Est. Priority Date: 01/31/1995
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Gnade, Bruce, Webb, Douglas A.
• Primary Examiner(s): Phan, James
• Application Number:
  US08/381,254
• Time in Patent Office: 427 Days
• Field of Search: 359/224, 359/213, 359/230, 359/214, 359/291, 359/846, 359/847, 359/221, 359/900, 359/223, 359/298, 348/770-771, 427/523-531
• US Class Current: 359/223.1
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: Y10S 359/90 Methods

Abstract

A method of fabricating a digital micromirror device (DMD) (10) spatial light modulator (SLM) with a hardened superstructure hinge (16). The invention comprises strengthening a hinge layer material (36) by ion implantation before etching the hinge layer material (36) to form the hinge (16), but could be implanted after etching the hinge (16). The ion implantation is applied with a predetermined energy to concentrate the implanted material (62) at the center of the hinge layer material (36). The entire process is performed using conventional robust semiconductor processes, at low temperatures. Through ion implantation, the DMD hinge (16) is strengthened to minimize or eliminate the possibility of creep. A combination of ions could be implanted if desired. The ion chosen is based on the solubility of the hinge material.

Claims

1. A method of fabricating a spatial light modulator, comprising the steps of:

a) defining address circuitry on a substrate;

b) defining a hinge support structure on said substrate;

c) depositing a hinge layer material on said hinge support structure;

d) ion implanting said hinge layer material with a first material;

e) defining a hinge from said ion implanted hinge layer material; and

f) defining a picture element on said hinge which is deflectable in two directions over said address circuitry.

2. The method as specified in claim 1 comprising the step of ion implanting said first material in said hinge layer material with a predetermined energy to concentrate said implanted first material at a center of said hinge layer material.

3. The method as specified in claim 2 wherein said hinge layer material is deposited by sputtering.

4. The method as specified in claim 3 wherein said hinge layer material consists of either aluminum, an aluminum alloy, titanium tungsten, titanium nitride, titanium tungsten nitride, titanium aluminum nitride, chromium or tungsten.

5. The method as specified in claim 1 wherein said ion implanted material is comprised of at least one of either oxygen, nitrogen, boron, carbon, a metal, a metal oxide, nitride or carbide.

6. The method as specified in claim 5 wherein a plurality of ion types are implanted to form a combination implantation.