Dynamic memory with isolated digit lines

• US 5,506,811 A
• Filed: 05/20/1994
• Issued: 04/09/1996
• Est. Priority Date: 04/20/1993
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: McLaury, Loren L.
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Hoang, Huan
• Application Number:
  US08/246,443
• Time in Patent Office: 690 Days
• Field of Search: 365/233, 365/203, 365/189.01, 365/207, 365/230.01, 365/189.06, 365/149, 365/190
• US Class Current: 365/233.1
• CPC Class Codes: G11C 11/4091 Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
• CPC Class Codes: G11C 11/4097 Bit-line organisation, e.g. bit-line layout, folded bit lines
• CPC Class Codes: G11C 2207/002 Isolation gates, i.e. gates coupling bit lines to the sense amplifier
• CPC Class Codes: G11C 2207/005 Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
• CPC Class Codes: G11C 7/06 Sense amplifiers; Associated circuits , e.g. timing or triggering circuits
• CPC Class Codes: G11C 7/18 Bit line organisation; Bit line lay-out

Abstract

A memory in which a portion of a digit line is isolated from the remainder of the digit line during a write cycle has improved performance. In the conventional architecture of a memory device, cells are arranged in rows and columns and a sense amplifier is employed for a pair of columns, located between a pair of complementary digit lines. An embodiment of the present invention in this architecture provides improved means for isolating the sense amplifier during a write cycle.

Claims

1. A memory responsive to a data signal, an address signal, and a write control signal, the memory comprising:

a. a cell for storing data conveyed by the data signal;

b. a cell selection circuit coupled to the address signal for providing a row signal and a column signal;

c. a digit line;

d. an access circuit for coupling the cell to the digit line in response to the row signal;

e. a timing circuit responsive to the write control signal, for providing a first timing signal and a second timing signal;

f. a sense amplifier comprising a sense node, the sense amplifier coupled to the cell selection circuit, the sense amplifier for establishing, on the sense node a signal conveying stored data;

g. an isolator coupled to the timing circuit and responsive to the first timing signal, the isolator coupled between the digit line and the sense node for isolating the digit line from the sense node; and

h. a buffer coupled to the digit line for driving the data signal onto the digit line;

wherein the timing circuit is responsive to the write control signal for providing the first timing signal to isolate the cell from the sense node while the data signal is coupled to the sense node for a time at least sufficient for the sense amplifier to attain a state corresponding to the data signal, then for providing the second tirning signal to isolate the buffer from the sense node while the sense amplifier is coupled to the cell for a time at least sufficient for the cell to attain a state corresponding to the sense amplifier.

2. The memory of claim 1 wherein the timing circuit further comprises:

a. a pulse generator, the pulse generator coupled to the write control signal for providing the first timing signal; and

b. a delay circuit coupled to the first timing signal for providing the second timing signal.

3. A dynamic memory responsive to a data signal, the memory comprising:

a. a first conductor and a second conductor, the first conductor having a capacitance, the capacitance having a charge;

b. a sense amplifier coupled to the first conductor;

c. a first switch for coupling the data signal to the first conductor so that the charge and the sense amplifier are responsive to the data signal while the first switch is closed;

d. a second switch in series between the first conductor and the second conductor;

e. a dynamic memory cell coupled to the second conductor; and

f. a timing circuit for operating the first switch and the second switch so that after the sense amplifier and the capacitance have responded to the data signal, the first switch is opened and the second switch is closed, thereby writing data to the cell.

4. The memory of claim 3 wherein the capacitance comprises a distributed capacitance.

5. The memory of claim 3 wherein the first conductor and the second conductor comprise a bit line.

6. The memory of claim 3 wherein the sense amplifier is an N-sense amplifier.

7. The memory of claim 3 wherein the second switch comprises a second FET, the second FET comprises a second control terminal and a second channel, the second channel being coupled in series between the first conductor and the second conductor.

8. The memory of claim 3 wherein:

a. the memory is further responsive to a column address strobe and a write enable signal;

b. the memory further comprises a column select circuit responsive to the column address strobe; and

c. the timing circuit is responsive to the column address strobe and the write enable signal.

9. The memory of claim 3 wherein the first switch comprises a first FET, the first FET comprises a first control terminal and a first channel, the first channel being coupled to the first conductor for conducting the data signal.

10. The memory of claim 9 wherein the first control terminal is coupled to a column decoder.

11. The memory of claim 3 wherein:

a. the first switch comprises a first FET, the first FET comprises a first control terminal and a first channel, the first channel being coupled to the first conductor for conducting the data signal;

b. the second switch comprises a second FET, the second FET comprises a second control terminal and a second channel, the second channel being coupled in series between the first conductor and the second conductor; and

c. the timing circuit provides a first timing signal coupled to the first control terminal and a second timing signal coupled to the second control terminal.

12. The memory of claim 11 wherein the timing circuit further comprises a delay element, responsive to the second timing signal, for providing the first timing signal after a delay.

13. The memory of claim 3 wherein:

the memory is further responsive to a prebuffer data signal; and

b. the memory further comprises a buffer for providing the data signal responsive to the prebuffer data signal.

14. The memory of claim 13 wherein:

a. the memory is further responsive to a column address strobe and a write enable signal;

b. the memory further comprises a column select circuit responsive to the column address strobe; and

c. the buffer is enabled responsive to the column address strobe and the write enable signal.

15. The memory of claim 3 further comprising a second sense amplifier coupled to the second conductor.

16. The memory of claim 15 further comprising a third sense amplifier coupled to the first conductor.

17. A dynamic memory responsive to a data signal, the memory comprising:

a. a first, a second, and a third conductor, the first conductor having a capacitance, the capacitance having a charge;

b. a sense amplifier coupled to the second conductor;

c. a first switch for coupling the data signal to the first conductor;

d. a second switch in series between the first conductor and the second conductor, so that the charge and the sense amplifier are responsive to the data signal while the first switch and the second switch are closed;

e. a third switch in series between the second conductor and the third conductor;

f. a first dynamic memory cell coupled to the third conductor; and

g. a timing circuit for operating the first, the second, and the third switch so that after the sense amplifier and the capacitance have responded to the data signal, the first switch is opened and the third switch is closed, thereby writing data to the first cell.

18. The memory of claim 17 wherein the capacitance comprises a distributed capacitance.

19. The memory of claim 17 wherein the first conductor and the second conductor comprise a bit line.

20. The memory of claim 17 wherein the sense amplifier is an N-sense amplifier.

21. The memory of claim 17 wherein:

a. the memory is further responsive to a column address strobe and a write enable signal;

b. the memory further comprises a column select circuit responsive to the column address strobe; and

c. the timing circuit is responsive to the column address strobe and the write enable signal.

22. The memory of claim 17 wherein:

a. the first switch comprises a first FET, the first FET comprises a first control terminal and a first channel, the first channel being coupled to the first conductor for conducting the data signal;

b. the second switch comprises a second FET, the second FET comprises a second control terminal and a second channel, the second channel being coupled in series between the first conductor and the second conductor;

c. the third switch comprises a third FET, the third FET comprises a third control terminal and a third channel, the third channel being coupled in series between the second conductor and the third conductor; and

d. the timing circuit provides a first timing signal coupled to the first control terminal, a second timing signal coupled to the second control terminal, and a third control signal coupled to the third control terminal.

23. The memory of claim 22 wherein the timing circuit further comprises a delay element, responsive to the second timing signal, for providing the first timing signal after a delay.

24. The memory of claim 17 wherein:

a. the memory is further responsive to a prebuffer data signal; and

b. the memory further comprises a buffer for providing the data signal responsive to the prebuffer data signal.

25. The memory of claim 24 wherein:

a. the memory is further responsive to a column address strobe and a write enable signal;

b. the memory further comprises a column select circuit responsive to the column address strobe; and

c. the buffer is enabled responsive to the column address strobe and the write enable signal.

26. The memory of claim 17 further comprising a second sense amplifier coupled to the third conductor.

27. The memory of claim 26 further comprising a third sense amplifier coupled to the first conductor.

28. The memoryof claim 17 wherein the first switch comprises a first FET, the first FET comprises a first control terminal and a first channel, the first channel being coupled to the first conductor for conducting the data signal.

29. The memory of claim 28 wherein the first control terminal is coupled to a column decoder.

30. The memory of claim 28 wherein the second switch comprises a second FET, the second FET comprises a second control terminal and a second channel, the second channel being coupled in series between the second conductor and the third conductor.

31. The memory of claim 30 wherein the third switch comprises a third FET, the third FET comprises a third control terminal and a third channel, the third channel being coupled in series between the second conductor and the third conductor.