Method of sputtering a carbon protective film on a magnetic disk by superimposing an AC voltage on a DC bias voltage

• US 5,507,930 A
• Filed: 09/01/1994
• Issued: 04/16/1996
• Est. Priority Date: 03/20/1992
• Status: Expired due to Term

• Current Assignee: Komar Incorporated (Western Digital Corporation)
• Original Assignee: Komar Incorporated (Western Digital Corporation)
• Inventors: Trachuk, Yuri, Ranjan, Rajiv Y., Yamashita, Tsutomu T., Lee, Kyou H.
• Primary Examiner(s): NGUYEN, NAM X
• Application Number:
  US08/299,852
• Time in Patent Office: 593 Days
• Field of Search: 204/298.08, 204/192.12, 204/192.16, 204/192.2, 204/192.15
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/0605 Carbon
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: G11B 5/727 Inorganic carbon protective coating, e.g. graphite, diamond like carbon or doped carbon
• CPC Class Codes: G11B 5/8408 protecting the magnetic layer

Abstract

A carbon film for protecting a magnetic disk is sputtered by a DC magnetron sputtering method, with the addition of superimposed AC power on the DC power applied to the carbon target. When the carbon film is sputtered for extended period in a production sputtering machine, nodular growth occurs over the sputtering surface of the carbon target. Such nodules are variously called "warts" or "mushrooms" in the industry and they are detrimental to the productivity of the sputtering machine. The size and quantity of the nodules over the target surface increase as the target is sputtered longer, and because these region do not contribute to sputtering, the efficiency of the target decreases. As sputter efficiency decreases, power input must be increased to the target to make up for the loss in the effective sputtering area of the target. Eventually, the power input must be increased to a point where arcing occurs continuously and sputtering cannot be continued. By superimposing AC power onto the DC power applied to the target, virtually all arcing on the carbon target is eliminated, thereby significantly reducing the nodular growth and extending the use of the target.

Claims

1. A method of sputtering a carbon film comprising the step of applying DC power to a target, said target comprising substantially elemental carbon, and superimposing AC power on the DC power so as to inhibit the formation of nodules on the surface of said target.

2. The method of claim 1 wherein the amount of AC power superimposed on the DC power is between 20% and 80% of the amount of DC power applied to the target.

3. The method of claim 2 wherein the amount of AC power superimposed on the DC power is between 30% and 60% of the amount of DC power applied to the target.

4. The method of claim 1 wherein the AC power is in the form of a signal having a frequency between 100 KHz and 1000 KHz.

5. The method of claim 4 wherein the AC power is in the form of a signal having a frequency between 300 KHz and 500 KHz.

6. The method of claim 5 wherein the AC power is in the form of a signal having a frequency of about 400 KHz.

7. The method of claim 1 wherein said sputtering is performed in an atmosphere comprising hydrogen or a hydrogen liberating gas selected from a group consisting of CH₄ or C₂ H₆.

8. The method of claim 7 wherein said sputtering is performed in an atmosphere comprising at least 20% hydrogen by volume.

9. The method of claim 1 wherein said target comprises substantially graphite.

10. The method of claim 1 wherein said target comprises crystalline graphite.

11. A method of fabricating a magnetic disk comprising the steps of:

providing a substrate;

depositing a magnetic layer; and

depositing a protective carbon film over said magnetic layer, said protective carbon film being deposited by a sputtering process, said sputtering process comprising applying DC power to a carbon target and superimposing AC power on the DC power so as to inhibit the formation of nodules on the surface of said carbon target.

12. The method of claim 11 further comprising depositing an undercoat layer under said magnetic layer.

13. The method of claim 12 wherein said substrate comprises aluminum.

14. The method of claim 13 further comprising depositing a NiP layer between said substrate and said undercoat layer.

15. A method of inhibiting the growth of nodules on a target in a sputtering process, said target comprising substantially pure carbon, said method comprising the steps of:

applying a DC voltage to said carbon target thereby causing said carbon target to function as a cathode;

superimposing an AC signal on said DC voltage and applying said AC signal to said carbon target, said AC signal having a frequency of from 300 KHz to 500 KHz.

16. The method of claim 15 wherein said AC signal functions to limit the occurrence of arcing events at said target.