Method for fabricating thin film transistor using anodic oxidation

• US 5,508,209 A
• Filed: 09/27/1994
• Issued: 04/16/1996
• Est. Priority Date: 10/01/1993
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohnuma, Hideto, Takemura, Yasuhiko, Zhang, Hongyong, Yamaguchi, Naoaki
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US08/312,795
• Time in Patent Office: 567 Days
• Field of Search: 437/21, 437/101, 437/41, 437/24, 257/57, 257/66
• US Class Current: 438/162
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458

Abstract

In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a relatively high voltage. A gate insulating film is etched using the barrier anodic oxide as a mask. The porous anodic oxide is selectively etched after etching barrier anodic oxide, to obtain a region of an active layer on which the gate insulating film is formed and the other region of the active layer on which the gate insulating film is not formed. An element including at least one of oxygen, nitrogen and carbon is introduced into the region of the active layer at high concentration in comparison with a concentration of the other region of the active layer. Further, N- or P-type impurity is introduced into the active layer. Accordingly, high resistance impurity regions are formed in both sides of a channel forming region.

Claims

1. A method for producing a semiconductor device comprising the steps of:

forming a semiconductor layer;

forming an insulating film on the semiconductor layer;

forming a gate film on the insulating film;

selectively forming a mask film on the gate film;

etching the gate film using the mask film, to form a gate electrode;

supplying a current to the gate electrode in an electrolytic solution, to form a first anodic oxide layer on both sides of the gate electrode;

etching the insulating film using the first anodic oxide layer as a mask, to form a gate insulating film;

removing the first anodic oxide layer; and

introducing an element including at least one of oxygen, nitrogen and carbon into the semiconductor layer using the gate electrode and the gate insulating film as masks.

2. The method of claim 1 further comprising the step of anodically oxidizing the gate electrode, to form a second anodic oxide layer of a barrier type, after forming the first anodic oxide layer.

3. The method of claim 1 further comprising the step of irradiating with one of a laser and an intense light corresponding to the laser, to activate said element including at least one of oxygen, nitrogen and carbon.

4. A method of producing a semiconductor device comprising the steps of:

forming an island semiconductor film having crystallinity on a substrate;

forming an insulating film on the island semiconductor film;

forming a gate electrode on the insulating film;

anodically oxidizing the gate electrode, to form a first anodic oxide film on both sides of the gate electrode;

anodically oxidizing the gate electrode, to form a second anodic oxide film between the gate electrode and the first anodic oxide film and on the gate electrode;

etching the insulating film, to form a gate insulating film;

removing the first anodic oxide film;

introducing an element including at least one of oxygen, nitrogen and carbon into the semiconductor film; and

introducing an impurity for providing one conductivity type into the semiconductor film.

5. The method of claim 4 wherein the substrate includes Corning 7059.

6. The method of claim 4 wherein the substrate has a glass transfer point of 750°

C. or less.

7. The method of claim 4 wherein the gate electrode includes an anodically oxidizable material.

8. A method of producing a semiconductor device comprising the steps of:

forming an island silicon film having crystallinity on a substrate;

forming an insulating film on the silicon film;

forming an anodically oxidizable film on the insulating film;

forming a mask film on the anodically oxidizable film;

etching the anodically oxidizable film using the mask film, to form a gate electrode;

anodically oxidizing the gate electrode, to form a first anodic oxide film on both sides of the gate electrode;

removing the mask film;

anodically oxidizing the gate electrode, to form a second anodic oxide film between the gate electrode and the first anodic oxide film and on the gate electrode;

etching the insulating film, to form a gate insulating film;

removing the first anodic oxide film;

introducing an element including at least one of oxygen, nitrogen and carbon into the silicon film through the gate insulating film; and

introducing an impurity for providing one conductivity type into the silicon film without passing through the gate insulating film.

9. The method of claim 8 further comprising the step of forming an oxide film on a surface of the anodically oxidizable film.

10. The method of claim 8 further comprising the step of irradiating with a laser to activate the element and the impurity.

11. The method of claim 8 wherein a concentration of the element to be introduced is 1×

10¹⁴ to 3×

10¹⁶ cm^-2 and an accelerating voltage is 50 to 100 kV.

12. The method of claim 8 wherein a concentration of the impurity to be introduced is 5×

10¹⁴ to 5×

10¹⁵ cm^-2 and an accelerating energy is 10 to 30 keV.

13. The method of claim 8 wherein the silicon film includes a high resistance region on which the gate insulating film is formed and a low resistance region.

14. A method of producing a semiconductor device comprising the steps of:

forming an island silicon film having crystallinity on a substrate;

forming an insulating film on the silicon film;

forming an anodically oxidizable film on the insulating film;

selectively forming a mask film on the anodically oxidizable film;

etching the anodically oxidizable film using the mask film, to form a gate electrode;

anodically oxidizing the gate electrode, to form a first anodic oxide film on both sides of the gate electrode;

removing the mask film;

anodically oxidizing the gate electrode, to form a second anodic oxide film between the gate electrode and the first anodic oxide film and on the gate electrode;

selectively etching the insulating film, to form a gate insulating film;

removing the first anodic oxide film;

introducing an element including at least one of oxygen, nitrogen and carbon into the silicon film through the gate insulating film;

selectively etching the insulating film using the gate electrode and the second anodic oxide film; and

introducing an impurity for providing one conductivity type into the silicon film without passing through the gate insulating film.

15. A method of producing a semiconductor device comprising the steps of:

forming an island silicon film having crystallinity on a substrate having an insulating surface;

forming an insulating film on the silicon film;

forming an anodically oxidizable film on the insulating film;

selectively forming a mask film on the anodically oxidizable film;

etching the anodically oxidizable film using the mask film, to form a gate electrode;

anodically oxidizing the gate electrode, to form a first anodic oxide film on both sides of the gate electrode;

removing the mask film;

anodically oxidizing the gate electrode, to form a second anodic oxide film between the gate electrode and the first anodic oxide film and on the gate electrode;

selectively etching the insulating film, to form a gate insulating film;

removing the first anodic oxide film;

introducing an element including at least one of oxygen, nitrogen and carbon into the silicon film through the gate insulating film;

introducing an impurity for providing one conductivity type into the silicon film without passing through the gate insulating film;

forming a metal film on a region of the silicon film on which the gate insulating film is not formed; and

reacting the metal with the region by laser radiation, to form a metal silicide region.

16. The method of claim 15 further comprising the step of heating the substrate during the laser radiation.

17. A method of producing a semiconductor device comprising the steps of:

forming an island silicon film having crystallinity on a substrate having an insulating surface;

forming an insulating film on the silicon film;

forming an anodically oxidizable film on the insulating film;

selectively forming a mask film on the anodically oxidizable film;

etching the anodically oxidizable film using the mask film, to form a gate electrode;

anodically oxidizing the gate electrode, to form a first anodic oxide film on both sides of the gate electrode;

removing the mask film;

anodically oxidizing the gate electrode, to form a second anodic oxide film between the gate electrode and the first anodic oxide film and on the gate electrode;

selectively etching the insulating film, to form a gate insulating film;

removing the first anodic oxide film;

forming a metal film on a region of the silicon film on which the gate insulating film is not formed;

introducing an element including at least one of oxygen, nitrogen and carbon into the silicon film through the gate insulating film;

introducing an impurity for providing one conductivity type into the silicon film without passing through the gate insulating film; and

reacting the metal with the region by laser radiation, to form a metal silicide region.

18. A method of producing a semiconductor device comprising the steps of:

forming an island silicon film having crystallinity on a substrate having an insulating surface;

forming an insulating film on the silicon film;

forming an anodically oxidizable film on the insulating film;

selectively forming a mask film on the anodically oxidizable film;

etching the anodically oxidizable film using the mask film, to form a gate electrode;

removing the mask film;

anodically oxidizing the gate electrode, to form a first anodic oxide film on both sides of the gate electrode and on the gate electrode;

anodically oxidizing the gate electrode, to form a second anodic oxide film between the gate electrode and the first anodic oxide film;

selectively etching the insulating film using the first anodic oxide film as a mask, to form a gate insulating film;

removing the first anodic oxide film;

introducing an element including at least one of oxygen, nitrogen and carbon into the silicon film through the gate insulating film;

introducing an impurity for providing one conductivity type into the silicon film without passing through the gate insulating film; and

forming a silicon nitride film on at least the gate insulating film.