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Capacitor, electrode structure, and semiconductor memory device

  • US 5,508,953 A
  • Filed: 05/16/1994
  • Issued: 04/16/1996
  • Est. Priority Date: 05/14/1993
  • Status: Expired due to Term
First Claim
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1. A capacitor comprising:

  • an electrically interconnecting layer;

    a barrier metal layer deposited on the interconnecting layer to prevent oxidation of the interconnecting layer;

    an oxidation-resistant lower electrode disposed above the barrier metal layer;

    a dielectric film of high dielectric constant, comprising primary and secondary components, deposited on the lower electrode;

    an upper electrode deposited on the dielectric film; and

    a diffusion barrier layer interposed between the barrier metal layer and the lower electrode, comprising a material preventing the primary component of the dielectric film from diffusing into the electrically interconnecting layer.

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