Multiple quantum well semiconductor laser

• US 5,509,026 A
• Filed: 02/01/1995
• Issued: 04/16/1996
• Est. Priority Date: 02/03/1994
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Sasaki, Yoshihiro, Morimoto, Takao
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): Song, Yisun
• Application Number:
  US08/384,333
• Time in Patent Office: 440 Days
• Field of Search: 372/45, 372/50, 372/46
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/32391 based on In(Ga)(As)P
• CPC Class Codes: H01S 5/3415 containing details related to carrier capture times into wells or barriers
• CPC Class Codes: H01S 5/3428 layer orientation perpendicular to the substrate
• CPC Class Codes: H01S 5/34306 emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• CPC Class Codes: H01S 5/3434 with a well layer comprising at least both As and P as V-compounds

Abstract

Disclosed herein is a long wavelength multiple quantum well semiconductor laser which is capable of preventing the nonuniform injection of carriers into quantum wells, and the overflow of the electrons within the quantum wells, and which is also capable of suppressing the increase in the threshold caused by insufficient gain, and the increase in the threshold and the deterioration in the slope efficiency caused by internal absorption loss. In a multiple quantum well semiconductor laser which has an InGaAsP optical waveguide layer provided respective on the inside of a p-InP clad layer and an n-InP clad layer, and InGaAsP barrier layers and strained InGaAsP quantum well layers provided between the InP clad layers, the semiconductor laser according to this invention has the energy difference between the first quantum level of the hole in the quantum well and the top of the valence band in the barrier layer to be less than or equal to 160 meV, the energy difference between the first quantum level of the electron in the quantum well and the bottom of the conduction band in the barrier layer to be more than or equal to 30 meV, and the optical confinement factor to the quantum layer lying in the range from 0.01 to 0.07.

Claims

1. A multiple quantum well semiconductor laser using InP as a substrate,

said multiple quantum well structure having;

an energy difference between the first quantum level of the hole in a quantum well layer and the top of the valence band in a barrier layer smaller than or equal to 160 meV,

an energy difference between the first quantum level of the electron in said quantum well layer and the bottom of the conduction band in said barrier layer larger than or equal to 30 meV, and

an optical confinement factor of said quantum well layer in the range from 0.01 to 0.07.

2. The multiple quantum well semiconductor laser as claimed in claim 1, wherein said quantum well layers are composed of strained InGaAsP material.

3. The multiple quantum well semiconductor laser as claimed in claim 1, wherein said laser is of the refractive index waveguide type having a current blocking layer and the carriers are injected into said quantum well layers from the direction traversing the quantum well layers and the barrier layers.

4. The multiple quantum well semiconductor laser as claimed in claim 1, wherein an active layer is formed in mesa stripe form on a first conductivity type InP substrate and the top surface and the side faces of said active layer are surrounded by a second conductivity type InP layer.

5. The multiple quantum well semiconductor laser as claimed in claim 1, wherein wavelength selection means is formed along a cavity direction.

6. The multiple quantum well semiconductor laser as claimed in claim 3, wherein said quantum well layers are composed of strained InGaAsP material.

7. The multiple quantum well semiconductor laser as claimed in claim 4, wherein said quantum well layers are composed of strained InGaAsP material.

8. The multiple quantum well semiconductor laser as claimed in claim 5, wherein said quantum well layers are composed of strained InGaAsP material.