Fabrication of w-polycide-to-poly capacitors with high linearity

• US 5,510,637 A
• Filed: 02/13/1995
• Issued: 04/23/1996
• Est. Priority Date: 07/28/1993
• Status: Expired due to Fees

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Lei, Ming-Dar, Hsu, Shun-Liang, Lin, Mou-Shiung
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US08/387,433
• Time in Patent Office: 435 Days
• Field of Search: 257/304, 257/305, 257/311, 257/303, 257/532
• US Class Current: 257/304
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 28/40 Capacitors

Abstract

A method of forming a polycide-to-polysilicon capacitor with a low voltage coefficient and high linearity is described. A a first layer of polysilicon, having a suitable doping concentration, is deposited on the surface of the substrate and the field oxide regions. A layer of silicide is deposited over the polysilicon layer. The layer of silicide and the layer of polysilicon on the field oxide region are patterned, to form a polycide bottom plate of the capacitor. The polycide bottom plate is annealed. Sidewalls are formed on the sides of the polycide bottom plate. The polycide bottom plate is ion implanted in a vertical to produce the low voltage coefficient and high linearity. An interpoly dielectric layer is formed and patterned on the surface of the polycide bottom plate to act as a dielectric for the polycide-to-polysilicon capacitor. The interpoly dielectric layer is densified. A second layer of polysilicon, having a suitable doping concentration, is deposited on the surface of the dielectric layer and on the surface of the substrate and the field oxide regions. The second layer of polysilicon is patterned to form the top plate of the capacitor.

Claims

1. An integrated circuit in and on a silicon substrate having polycide-to-polysilicon capacitors and metal oxide silicon field effect devices with polycide gates, which are separated from each other by means of field oxide regions, comprising:

field oxide regions, n-well and p-well regions, and gate oxide regions located in and on said silicon substrate;

said polycide-to-polysilicon capacitors are located on the surface of said field oxide regions, wherein

said polycide-to-polysilicon capacitors comprise an ion-implanted polycide bottom plate having an upper layer of silicide over a lower doped layer of polysilicon;

an interpoly oxidation layer over said bottom plate, which acts as a dielectric for said polycide-to-polysilicon capacitor;

a second doped polysilicon layer located on said interpoly oxidation layer, which forms the top plate of said polycide-to-polysilicon capacitor; and

remaining layers to complete said integrated circuit, including dielectric layers, a metallization system connecting said metal oxide silicon field effect device and said polycide-to-polysilicon capacitor to other parts of said integrated circuit, and a passivation layer over said metallization system.

2. The integrated circuit of claim 1 wherein said lower doped layer of polysilicon has a thickness of between about 1500 and 2000 Angstroms.

3. The integrated circuit of claim 1 wherein said upper layer of silicide has a thickness of between about 500 and 2000 Angstroms.

4. The integrated circuit of claim 1 wherein said upper layer of silicide comprises WSi_x (tungsten silicide), wherein x is between 2.6 and 2.8.

5. The integrated circuit of claim 1 wherein said ion-implanted polycide bottom plate is ion implanted with arsenic AS⁷⁵.

6. The integrated circuit of claim 1 wherein said ion-implanted polycide bottom plate is ion implanted with phosphorus.

7. The integrated circuit of claim 1 wherein said ion-implanted polycide bottom plate is ion implanted with boron BF₂.

8. The integrated circuit of claim 1 wherein said interpoly oxidation layer has a thickness of between about 1000 and 1400 Angstroms when used in 1-micron processing.

9. The integrated circuit of claim 1 wherein said interpoly oxidation layer has a thickness of between about 600 and 800 Angstroms when used in 0.6 to 0.8-micron processing.

10. The integrated circuit of claim 1 wherein said second doped polysilicon layer of polysilicon has a thickness of between about 2500 and 3500 Angstroms.

11. A polycide-to-polysilicon capacitor, comprising:

an ion-implanted polycide bottom plate having an upper layer of silicide over a lower doped layer of polysilicon;

an interpoly oxidation layer over said bottom plate, which acts as a dielectric for said polycide-to-polysilicon capacitor; and

a second doped polysilicon layer located on said interpoly oxidation layer, which forms the top plate of said polycide-to-polysilicon capacitor.

12. The capacitor of claim 11 wherein said lower layer of polysilicon has a thickness of between about 1500 and 2000 Angstroms.

13. The capacitor of claim 11 wherein said upper layer of silicide has a thickness of between about 1500 and 2000 Angstroms.

14. The capacitor of claim 11 wherein said upper layer of silicide comprises WSi_x (tungsten silicide), wherein x is between 2.6 and 2.8.

15. The capacitor of claim 11 wherein said ion-implanted polycide bottom plate is ion implanted with arsenic AS⁷⁵.

16. The capacitor of claim 11 wherein said ion-implanted polycide bottom plate is ion implanted with phosphorus

17. The capacitor of claim 11 wherein said ion-implanted polycide bottom plate is ion implanted with boron BF₂.

18. The capacitor of claim 11 wherein said interpoly oxidation layer has a thickness of between about 1000 and 1400 Angstroms when used in 1-micron processing.

19. The capacitor of claim 11 wherein said interpoly oxidation layer has a thickness of between about 600 and 800 Angstroms when used in 0.6 to 0.8-micron processing.

20. The capacitor of claim 11 wherein said second doped polysilicon layer of polysilicon has a thickness of between about 2500 and 3500 Angstroms.