Acceleration sensor

• US 5,511,421 A
• Filed: 07/08/1993
• Issued: 04/30/1996
• Est. Priority Date: 07/08/1992
• Status: Expired due to Fees

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Kudo, Koichi
• Primary Examiner(s): Chilcot, Richard
• Assistant Examiner(s): MCCALL, ERIC SCOTT
• Application Number:
  US08/088,735
• Time in Patent Office: 1,027 Days
• Field of Search: 73/516 LM, 73/516 R, 73/517 A, 73/517 B, 73/517 AV, 73/517 R, 73/777, 73/780, 73/782, 73/862.68, 73/862.64, 73/763, 73/767 , 73/862.625, 73/862.642, 73/514.01, 73/514.15, 73/514.16, 73/514.21, 73/514.23, 73/514.24, 73/514.25, 73/514.32 , 73/514.35, 310/329, 324/160, 324/162, 324/661, 324/662, 324/176, 324/457, 324/658, 324/663, 324/686, 361/281, 361/280, 361/283.1, 29/25.41, 307/580, 307/308, 200/61.45 R, 200/61.53, 200/61.58 R, 200/181, 257/254, 257/414, 257/415, 257/417-420, 318/651-652, 318/648, 318/687, 318/135, 318/568.16, 369/145
• US Class Current: 73/514.32
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/124 by semiconductor devices comprising at least one PN junction, e.g. transistors
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type

Abstract

An acceleration detecting method and an acceleration sensor are disclosed. An inverted potential distribution structure of a metal-insulator-semiconductor type is formed on a semiconductor substrate. The deflection of the weight fixed above the semiconductor substrate with a predetermined space therebetween is detected by the output of the inverted potential distribution structure of a metal-insulator-semiconductor type. The inverted potential distribution structure of a metal-insulator-semiconductor type is turned on when the weight or the electrode on the surface thereof comes close to or comes into contact with the insulation film or the electrode on the semiconductor substrate. The capacitance of the inverted potential distribution structure of a metal-insulator-semiconductor type changes with the deflection of the weight.

Claims

1. An acceleration sensor having a semiconductor substrate, comprising:

a bridge structure formed on said semiconductor substrate, said bridge structure including;

a weight having a predetermined mass; and

a direction regulating member for regulating the direction of deflection of said weight which is produced when an acceleration is applied thereto, to a predetermined direction which is approximately parallel to a surface of said semiconductor substrate; and

a plurality of metal-insulator-semiconductor type elements which are formed in said semiconductor substrate in the direction of deflection of said weight, an output of each of said metal-insulator-semiconductor type elements being controlled by the deflection of said weight.

2. An acceleration sensor according to claim 1, wherein said plurality of metal-insulator-semiconductor type elements are metal-insulator-semiconductor type transistors formed in said semiconductor substrate such that each of said transistors is turned on or off when said weight comes close thereto.

3. An acceleration sensor according to claim 2, wherein said plurality of metal-insulator-semiconductor type elements are arranged at regular pitches.

4. An acceleration sensor having a semiconductor substrate, comprising:

a bridge structure formed on said semiconductor substrate, said bridge structure including;

a weight having a predetermined mass; and

a direction regulating member for regulating the direction of deflection of said weight which is produced when an acceleration is applied thereto, to a predetermined direction which is approximately parallel to a surface of said semiconductor substrate;

a plurality of metal-insulator-semiconductor type elements which are formed in said semiconductor substrate in the direction of deflection of said weight, an output of each of said metal-insulator-semiconductor type elements being controlled by the deflection of said weight;

wherein said plurality of metal-insulator-semiconductor type elements are metal-insulator-semiconductor type transistors formed in said semiconductor substrate such that each of said transistors is turned on or off when said weight comes close thereto; and

wherein said metal-insulator-semiconductor type transistors include;

a metal electrode which is deflected with the deflection of said weight,

an insulation film formed on a surface of said semiconductor substrate;

a plurality of source layers formed for the respective metal-insulator-semiconductor type transistors in said semiconductor substrate; and

a drain layer formed in said semiconductor substrate;

each of said source layers and said drain layer being arranged with a space therebetween so that a channel is formed in said space and said channel is opposed to said metal electrode through said insulation film when said metal electrode comes close to said channel.

5. An acceleration sensor according to claim 4, wherein said metal electrode is an aluminum electrode and said insulation film is an oxide film.

6. An acceleration sensor according to claim 4, wherein said plurality of metal-insulator-semiconductor type transistors hold said drain layer in common.

7. An acceleration sensor according to claim 6, wherein said plurality of metal-insulator-semiconductor type transistors are arranged in two rows with said common drain layer therebetween.

8. An acceleration sensor having a semiconductor substrate, comprising:

a bridge structure formed on said semiconductor substrate, said bridge structure including;

a weight having a predetermined mass; and

a direction regulating member for regulating the direction of deflection of said weight which is produced when an acceleration is applied thereto, to a predetermined direction which is approximately parallel to a surface of said semiconductor substrate;

a plurality of metal-insulator-semiconductor type elements which are formed in said semiconductor substrate in the direction of deflection of said weight, an output of each of said metal-insulator-semiconductor type elements being controlled by the deflection of said weight;

wherein said plurality of metal-insulator-semiconductor type elements are metal-insulator-semiconductor type transistors formed in said semiconductor substrate such that each of said transistors is turned on or off when said weight comes close thereto; and

wherein said metal-insulator-semiconductor type transistors include;

an insulation film formed on a surface of said semiconductor substrate;

a plurality of source layers formed for the respective metal-insulator-semiconductor type transistors in said semiconductor substrate; and

a drain layer formed in said semiconductor substrate;

first metal electrodes formed on said insulation film; and

a second metal electrode which is deflected with the deflection of said weight,

each of said source layers and said drain layer being arranged with a space therebetween so that a channel is formed in said space and said channel is opposed to the corresponding first metal electrode through said insulation film.

9. An acceleration sensor having a semiconductor substrate, comprising:

a bridge structure formed on said semiconductor substrate, said bridge structure including;

a weight having a predetermined mass;

a direction regulating member for regulating the direction of deflection of said weight which is produced when an acceleration is applied thereto, to a predetermined direction which is approximately parallel to a surface of said semiconductor substrate; and

a plurality of metal-insulator-semiconductor type elements which are formed in said semiconductor substrate in the direction of deflection of said weight, an output of each of said metal-insulator-semiconductor type elements being controlled by the deflection of said weight; and

wherein said plurality of metal-insulator-semiconductor type elements are metal-insulator-semiconductor type capacitors.

10. An acceleration sensor according to claim 9, wherein said plurality of metal-insulator-semiconductor type capacitors include:

an insulation film formed on a surface of said semiconductor substrate;

a plurality of high density impurity layers formed for the respective metal-insulator-semiconductor type capacitors in said semiconductor substrate; and

a metal electrode which is deflected with the deflection of said weight.

11. An acceleration sensor according to claim 9, further comprising a bridge circuit which includes said plurality of metal-insulator-semiconductor type elements on sides of said bridge circuit.

12. An acceleration sensor, having a semiconductor substrate, comprising:

a bridge structure formed on said semiconductor substrate, said bridge structure including;

a weight having a predetermined mass; and

a direction regulating member for regulating the direction of deflection of said weight which is produced when an acceleration is applied thereto, to a predetermined direction which is approximately parallel to a surface of said semiconductor substrate; and

a plurality of metal-insulator-semiconductor type elements which are formed in said semiconductor substrate in the direction of deflection of said weight, an output of each of said metal-insulator-semiconductor type elements being controlled by the deflection of said weight;

wherein said direction regulating member includes a plurality of columns each of which has elasticity in the direction approximately parallel to a surface of said semiconductor substrate;

said plurality of columns being arranged in said direction of deflection of said weight to be regulated, with one end of each column fixed to said semiconductor substrate and the other end connected to said weight.

13. An acceleration sensor according to claim 12, wherein said plurality of columns and said weight are integrally formed.

14. An acceleration sensor according to claim 12, wherein said plurality of columns and said weight are composed of polysilicon.

15. An acceleration sensor according to claim 12, wherein each of said columns has a bent portion which is bent in a plane approximately parallel to said semiconductor substrate.

16. An acceleration sensor having a semiconductor substrate, comprising:

a bridge structure formed on said semiconductor substrate, said bridge structure including;

a weight having a predetermined mass;

a direction regulating member for regulating the direction of deflection of said weight which is produced when an acceleration is applied thereto, to a predetermined direction which is approximately parallel to a surface of said semiconductor substrate; and

a plurality of metal-insulator-semiconductor type elements which are formed in said semiconductor substrate in the direction of deflection of said weight, an output of each of said metal-insulator-semiconductor type elements being controlled by the deflection of said weight; and

wherein said direction regulating member includes a plurality of columns each of which has elasticity in the direction approximately parallel to a surface of said semiconductor substrate;

said plurality of columns being arranged in two directions each of which is the direction of deflection of said weight is to be regulated and the two direction crossing a predetermined angle, with one end of each column fixed to said semiconductor substrate and the other end connected to said weight.

17. An acceleration detecting method comprising the steps of:

regulating a direction of deflection of a weight having a predetermined mass to a predetermined direction which is approximately parallel to a surface of a semiconductor substrate by a direction regulating member which is formed on said semiconductor substrate; and

monitoring outputs of a plurality of metal-insulator-semiconductor type elements which are formed in the semiconductor substrate in the direction of deflection of said weight, and detecting said acceleration in said predetermined direction which is applied to said weight by a predetermined processing of the outputs of said metal-insulator-semiconductor type elements.

18. A vehicle safety apparatus comprising:

a safety mechanism;

an acceleration sensor including;

a bridge structure formed on semiconductor substrate, said bridge structure being provided with;

a weight having a predetermined mass; and

a direction regulating member which is produced when an acceleration is applied, to a predetermined direction which is approximately parallel to a surface of said semiconductor substrate; and

a plurality of metal-insulator-semiconductor type elements which are formed in said semiconductor substrate in the direction of deflection of said weight, the output of each of said metal-insulator-semiconductor type elements being controlled by the deflection of said weight; and

a means for operating said safety mechanism in accordance with an output of said acceleration sensor.

19. A vehicle safety apparatus according to claim 18, wherein said safety mechanism is an air bag.