High breakdown voltage semiconductor device and method of fabricating the same

• US 5,512,769 A
• Filed: 09/27/1994
• Issued: 04/30/1996
• Est. Priority Date: 05/25/1992
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Corporation (Panasonic Holdings Corporation)
• Inventors: Yamamoto, Masaharu
• Primary Examiner(s): Crane, Sara W.
• Assistant Examiner(s): Tang, Alice W.
• Application Number:
  US08/312,671
• Time in Patent Office: 581 Days
• Field of Search: 257/322, 257/335, 257/336, 257/337, 257/338, 257/339, 257/340, 257/341, 257/342, 257/343, 257/344, 257/408, 257/409, 257/492, 257/493
• US Class Current: 257/339
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/7835 with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Abstract

A high breakdown voltage semiconductor device is constituted, in either a semiconductor substrate or a lightly doped well diffused layer having deep diffusion depth, of a heavily doped diffused layer as a heavily doped drain diffused layer, a lightly doped diffused layer having deeper diffusion depth that the heavily doped diffused layer, and a lightly doped diffused layer adjacent to the heavily doped diffused layer called as an offset diffused layer. The heavily doped diffused layer functions as a part of the drain diffused layer, and has depth around 0.3 to 0.6 micron meter, and impurity concentration of 10¹⁹ to 10²⁰ impurities/cm³. The width of the heavily doped diffused layer is set to 4 to 5 micron meters or greater. If the width of the heavily doped diffused layer is set less than this value, the breakdown voltage at an edge is lowered, and thereby impairment of the breakdown voltage occurs. The lightly doped diffused layer also functions as a part of the drain diffused layer. The lightly doped diffused layer is arranged, in particular, to relax the gradient of the impurity concentration of the drain diffused layer due to the heavily doped diffused layer. If the impurity concentration of the lightly doped diffused layer is too low, the resistance becomes high, so that adequate current can not be obtained. In the high breakdown voltage transistor, a gate electrode is formed above the edge of the lightly doped diffused layer. The breakdown voltage of the device is determined by the size of the offset diffused layer and its impurity concentration.

Claims

1. A high breakdown voltage MOS type transistor having a drain offset structure, comprising:

a semiconductor substrate of a first conductivity type;

a source region formed in the semiconductor substrate, said source region including a heavily doped diffused layer of a second conductivity type formed in the semiconductor substrate;

an offset drain region formed in the semiconductor substrate, said offset drain region including a heavily doped drain diffused layer of the second conductivity type, a first lightly doped diffused layer of the second conductivity type so as to surround the heavily doped drain diffused layer, and a second lightly doped diffused layer of the second conductivity type formed as an offset diffused layer in the semiconductor substrate so as to be adjacent to the heavily doped diffused layer and form the drain offset structure, the first lightly doped diffused layer having a deeper diffusion depth than that of the heavily doped diffused layer in the drain region, the second lightly diffused layer having an impurity concentration for determining an offset resistance in the offset drain structure and the first lightly doped diffused layer having an impurity concentration for increasing locally the impurity concentration of the second lightly doped diffused layer only at edge portions of the second lightly doped diffused layer contiguous to the heavily doped drain diffused layer for relaxation of electric field intensity at the edge portions;

a gate electrode disposed on the semiconductor substrate so as to electrically bridge a path between the source region and the offset drain region via the second lightly doped diffused layer as the offset diffused layer;

wherein the first lightly doped diffused layer in the drain region has a laterally protruding size L1 extending from a wall of the heavily doped diffused layer in the offset drain region to an opposite wall of the first lightly doped diffused layer, a vertically protruding size L2 extending from a bottom of the heavily doped drain diffused layer in the offset drain region to a bottom of the first lightly doped diffused layer, and the second lightly doped diffused layer has an offset size L3 extending from a side of the heavily doped drain diffused layer in the offset drain region to an opposite side of the second lightly doped diffused layer; and

wherein a size relationship among L1, L2 and L3 is established for improvement of breakdown voltage characteristics as follows

space="preserve" listing-type="equation">L2>

L1 and L3>

L1>

1, and

wherein L1 is 1 micron meter or less.

2. A high breakdown voltage MOS type transistor as set forth in claim 1, wherein the heavily doped diffused layer has a diffusion depth in a range from 0.3 to 0.6 micron meters.

3. A high breakdown voltage MOS type transistor as set forth in claim 1, wherein the heavily doped diffused layer has an impurity concentration in a range of 10¹⁹ to 10²⁰ impurities/cm³.

4. A high breakdown voltage MOS type transistor as set forth in claim 1, wherein the second lightly doped diffused layer has a width of 4 micron meters or greater.

5. A high breakdown voltage MOS type transistor as set forth in claim 1, wherein the second lightly doped diffused layer has a depth in a range from 0.2 to 1 micron meters.

6. A high breakdown voltage MOS type transistor as set forth in claim 1, wherein the second lightly doped diffused layer has an impurity concentration of about 10¹⁶ impurities/cm³.

7. A high breakdown voltage MOS type transistor as set forth in claim 1 wherein an edge of the second lightly doped diffused layer is located to reach an edge of the gate electrode.

8. A high breakdown voltage MOS type transistor as set forth in claim 1, wherein a location of an edge of the first lightly doped diffused layer and a location of an edge of the gate electrode are spaced by greater than 4 micron meters.

9. A high breakdown semiconductor device containing a high breakdown voltage MOS type transistor of a drain offset structure and a high breakdown voltage diffused resistor in separate areas of a semiconductor substrate of a first conductivity type, said high breakdown voltage MOS type transistor comprising:

a source region formed in the semiconductor substrate, said source region including a heavily doped diffused layer of a second conductivity type formed in the semiconductor substrate;

an offset drain region formed in the semiconductor substrate, said offset drain region including a heavily doped drain diffused layer of the second conductivity type, a first lightly doped diffused layer of the second conductivity type formed so as to surround the heavily doped drain diffused layer, and a second lightly doped diffused layer of the second conductivity type formed as an offset diffused layer in the semiconductor substrate so as to be adjacent to the heavily doped drain diffused layer and form the drain offset structure, the first lightly doped diffused layer having a deeper diffusion depth than that of the heavily doped diffused layer in the drain region, the second lightly diffused layer having an impurity concentration for determining an offset resistance in the offset drain structure and the first lightly doped diffused layer having an impurity concentration for increasing locally the impurity concentration of the second lightly doped diffused layer only at edge portions of the second lightly doped diffused layers contiguous to the heavily doped drain diffused layer for relaxation of electric field intensity at the edge portions;

a gate electrode disposed on the semiconductor substrate so as to electrically bridge a path between the source region and the offset drain region via the second lightly doped diffused layer;

wherein the first lightly doped diffused layer in the drain region has a laterally protruding size L1 extending from a wall of the heavily doped drain diffused layer in the offset drain region to an opposite wall of the first lightly doped diffused layer, a vertically protruding size L2 extending from a bottom of the heavily doped diffused layer in the offset drain region to a bottom of the first lightly doped diffused layer, and the second lightly doped diffused layer has an offset size L3 extending from a side of the heavily doped drain diffused layer in the offset drain region to an opposite side of the second lightly doped diffused layer; and

wherein a size relationship among L1, L2 and L3 is established for improvement of breakdown voltage characteristics as follows

space="preserve" listing-type="equation">L2>

L1 and L3>

L1>

0, and

wherein L1 is 1 micron meter or less, and

said high breakdown voltage diffused resistor comprising;

a first lightly doped diffused layer of the second conductivity type formed in the semiconductor substrate; and

a second lightly doped diffused layer of the second conductivity type formed so as to be adjacent to the first lightly doped diffused layer and control a resistance value of the first lightly doped diffused layer, the first lightly doped diffused layer having a deeper diffusion depth than that of the second lightly doped diffused layer.

10. A high breakdown voltage semiconductor device as set forth in claim 9 wherein the first lightly doped diffused layer in the high breakdown voltage diffused resistor has a diffusion depth in a range from 1 to 3 micron meters.

11. A high breakdown voltage semiconductor device as set forth in claim 9, further comprising:

a thick oxide film disposed on the semiconductor substrate at a periphery of the high breakdown voltage MOS type transistor and at a boundary between the high breakdown voltage MOS type transistor and the high breakdown voltage diffused resistor; and

a second gate electrode disposed on the semiconductor device so as to surround the high breakdown voltage diffused resistor, so that the second lightly doped diffused layer of the high breakdown voltage diffused resistor is prevented form being in contact with the thick oxide film, and

wherein the second gate electrode overlaps partially the thick oxide film.

12. A high breakdown voltage MOS type transistor having a drain offset structure, comprising:

an offset drain region formed in the semiconductor substrate, the offset drain region including a heavily doped diffused layer of a second conductivity type, a first lightly doped diffused layer of the second conductivity type formed so as to surround the heavily doped drain diffused layer, and a second lightly doped diffused layer of the second conductivity type formed as an offset diffused layer in the semiconductor substrate so as to surround the first lightly doped diffused layer and to form the drain offset structure, the first lightly doped diffused layer having a deeper diffusion depth than that of the heavily doped diffused layer in the offset drain region, the second lightly diffused layer having an impurity concentration for determining an offset resistance in the offset drain structure and the first lightly doped diffused layer having an impurity concentration for increasing locally the impurity concentration of the second lightly doped diffused layer contiguous to the heavily doped drain diffused layer for relaxation of electric field intensity at the edge portions,

wherein the first lightly doped diffused layer in the offset drain region has a laterally protruding size L1 of 1 micrometer or less extending from a wall of the heavily doped drain diffused layer in the offset drain region to an opposite wall of the first lightly doped diffused layer, and a vertically protruding size L2 extending from a bottom of the heavily doped diffused layer in the offset drain region to a bottom of the first lightly doped diffused layer, and the second lightly doped diffused layer has an offset size L3 extending from a side of the heavily doped drain diffused layer in the offset drain region to an opposite side of the second lightly doped diffused layer, and wherein a size relationship among L1, L2 and L3 is established for improvement of breakdown voltage characteristics as follows

space="preserve" listing-type="equation">L2>

L1 and L3>

L1>

0;

a ring-shaped gate electrode disposed on the semiconductor substrate so as to surround the offset drain region comprising the heavily doped drain diffused layer, the first and second lightly doped diffused layers;

a source region formed in the semiconductor substrate, said source region including a heavily doped diffused layer of a second conductivity type formed in the semiconductor substrate so as to surround the gate electrode, the gate electrode electrically bridging a path between the source region and the offset drain region via the second lightly doped diffused layer; and

a thick oxide film formed so as to surround a periphery of the source region, so that the thick oxide film is prevented from being in contact with the second lightly doped diffused layer.

13. A high breakdown voltage MOS type transistor having a drain offset structure, comprising:

a semiconductor substrate of a first conductivity type;

a source region formed in the semiconductor substrate, said source region including a heavily doped diffused layer of a second conductivity type formed in the semiconductor substrate;

an offset drain region formed in the semiconductor substrate, said offset drain region including a heavily doped diffused layer of the second conductivity type, a first lightly doped diffused layer of the second conductivity type formed so as to surround the heavily doped drain diffused layer, and a second lightly doped diffused layer of the second conductivity type formed as an offset diffused layer in the semiconductor substrate so as to be adjacent to the heavily doped drain diffused layer and form the drain offset structure, the first lightly doped diffused layer having a deeper diffusion depth than that of the heavily doped diffused layer in the drain region, the second lightly diffused layer having an impurity concentration for determining an offset resistance in the offset drain structure and the first lightly doped diffused layer having an impurity concentration for increasing locally the impurity concentration of the second lightly doped diffused layer only at edge portions of the second lightly doped diffused layer contiguous to the heavily doped drain diffused layer for relaxation of electric field intensity at the edge portions;

a gate electrode disposed on the semiconductor substrate so as to electrically bridge a path between the source region and the offset drain region via the second lightly doped diffused layer;

wherein the first lightly doped diffused layer in the offset drain region has a laterally protruding size L1 extending from a wall of the heavily doped drain diffused layer in the offset drain region to an opposite wall of the first lightly doped diffused layer, a vertically protruding size L2 extending from a bottom of the heavily doped diffused layer in the offset drain region to a bottom of the first lightly doped diffused layer, and the second lightly doped diffused layer has an offset size L3 extending from a side of the heavily doped diffused layer in the offset drain region to an opposite side of the second lightly doped diffused layer; and

wherein a size relationship among L1, L2 and L3 is established for improvement of breakdown voltage characteristics as follows

space="preserve" listing-type="equation">L2>

L1 and L3>

L1>

0, and

wherein L1 is a1 micron meters or less and L2 is in a range from 0.7 to 2.4 micron meters and L3 is 4 micron meters or greater.