Semiconductor memory device having silicon nitride overlying only peripheral circuit areas
First Claim
1. A semiconductor memory device comprising, source and drain regions formed in a substrate, a gate oxide insulator formed on said substrate between said source and drain, a gate electrode on said gate oxide insulator between said source and drain, a first polysilicon film on said source, an ONO film on said first polysilicon film, a second polysilicon film on said ONO film, another insulation film on said second polysilicon film, and a silicon nitride film on said another insulation film at regions which extend laterally from said ONO film and which is not over said source or said drain regions, and wherein said first and second polysilicon films form electrodes of a capacitor.
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Accused Products
Abstract
According to this invention, after a semiconductor nitride film is formed on the entire surface of a semiconductor memory device, the semiconductor nitride film on a memory cell portion is removed. After a semiconductor oxide-based film is formed as an interlayer insulator on the entire surface of the semiconductor memory device, the semiconductor oxide-based film on a peripheral circuit portion is removed using the semiconductor nitride film as a stopper. For this reason, a shallow contact hole is formed in the peripheral circuit portion, and highly reliable wiring can be obtained. In addition, since hydrogen can be supplied to a surface of a semiconductor substrate in the memory cell portion by hydrogen annealing, an interface state on the surface can be eliminated, and the data retention characteristics of the memory cells can be improved.
52 Citations
1 Claim
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1. A semiconductor memory device comprising, source and drain regions formed in a substrate, a gate oxide insulator formed on said substrate between said source and drain, a gate electrode on said gate oxide insulator between said source and drain, a first polysilicon film on said source, an ONO film on said first polysilicon film, a second polysilicon film on said ONO film, another insulation film on said second polysilicon film, and a silicon nitride film on said another insulation film at regions which extend laterally from said ONO film and which is not over said source or said drain regions, and wherein said first and second polysilicon films form electrodes of a capacitor.
Specification
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- Resources
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Current AssigneeSony Corporation (Sony Group Corp.)
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Original AssigneeSony Corporation (Sony Group Corp.)
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InventorsNoda, Masanori
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Primary Examiner(s)Jackson, Jr., Jerome
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Assistant Examiner(s)GUAY, JOHN FRANCIS
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Application NumberUS08/265,612Time in Patent Office676 DaysField of Search257/640, 257/641, 257/649, 257/298, 257/370, 257/378, 257/306, 257/296, 257/297US Class Current257/640CPC Class CodesH01L 23/53214 the principal metal being a...H01L 2924/00 Indexing scheme for arrange...H01L 2924/0002 Not covered by any one of g...H10B 12/30 DRAM devices comprising one...Y10S 438/91 Controlling charging state ...
