Triaxial double switch module

• US 5,512,790 A
• Filed: 07/21/1994
• Issued: 04/30/1996
• Est. Priority Date: 07/21/1994
• Status: Expired due to Term

• Current Assignee: Delphi Technologies, Inc. (BorgWarner Incorporated)
• Original Assignee: Delco Electronics Corporation (General Motors Company)
• Inventors: Tagle, John D., Martin, Timothy D., Lachenmaier, Frank D., Lake, deceased, Donald E., Viduya, Lisa A.
• Primary Examiner(s): Shoop, Jr., William M.
• Assistant Examiner(s): PALADINI, ALBERT WILLIAM
• Application Number:
  US08/278,199
• Time in Patent Office: 649 Days
• Field of Search: 307/112, 307/140, 200/1 R, 200/5 R, 200/5 EB, 200/8 R, 200/11 DA, 327/365, 29/622, 257/678
• US Class Current: 307/112
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48747 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48847 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/4917 Crossed wires
• CPC Class Codes: H01L 2224/85201 Compression bonding
• CPC Class Codes: H01L 2224/85205 Ultrasonic bonding
• CPC Class Codes: H01L 24/06 of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/07 the devices being of a type provided for in group H01L29/00
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A low inductance triaxial semiconductor switching module. The module permits high power semiconductor switching devices to operated at high frequency but with low inductance. The module incorporates compositional, geometrical and electrical symmetry in connection with a triaxial terminal subassembly having coplanar contact areas. The terminal subassembly is readily fabricated and assembled into the module. The module also includes short internal leads, a special circumferential array of substrates subassemblies, and a circular circuit board having gate and Kelvin circuit patterns.

Claims

1. A semiconductor double switch module having reduced inductance and adapted for commercial manufacture, said module comprising:

a housing having a baseplate and defining a chamber;

a low electrical resistance highly contoured first terminal member disposed in said chamber, said first terminal member having a cylindrical first terminal portion and also having a radially extending first flange portion, said cylindrical first terminal portion having an axis, said first flange portion having a highly contoured first circumferential edge with an outer extremity providing a first contact area that has an arcuate length, said first contact area being radially spaced from said first terminal portion axis a first predetermined distance, effective to substantially provide a predetermined low electrical resistance between said first contact area and said cylindrical first terminal portion, and further effective to substantially provide a given inductance in said cylindrical first terminal portion with respect to a given electrical current flow;

a low electrical resistance highly contoured second terminal member disposed in said chamber, said second terminal member having a cylindrical second terminal portion and also having a radially extending second flange portion, said cylindrical second terminal portion having an axis, said second flange portion having a highly contoured second circumferential edge with an outer extremity providing a second contact area that has an arcuate length, said second contact area being radially spaced from said second terminal portion axis a second predetermined distance, effective to substantially provide a predetermined low electrical resistance between said second contact area and said cylindrical second terminal portion, and further effective to substantially provide a predetermined inductance in said cylindrical second terminal portion with respect to said given electrical current flow;

a low electrical resistance highly contoured third terminal member disposed in said chamber, said third terminal member having a cylindrical third terminal portion and also having a radially extending third flange portion, said cylindrical third terminal portion having an axis, said third flange portion having a highly contoured third circumferential edge with an outer extremity providing a third contact area that has an arcuate length, said third contact area being radially spaced from said third terminal portion axis a predetermined distance, effective to substantially provide a predetermined low electrical resistance between said third contact areas and said cylindrical third terminal portion and to further substantially provide a given inductance in said cylindrical third terminal portion with respect to a given electrical current flow;

a triaxial disposition of said first, second and third cylindrical terminal portions on a common axis, wherein the cylindrical portion of the second terminal member concentrically surrounds the cylindrical portion of the first terminal member and the cylindrical portion of the third terminal member concentrically surrounds the cylindrical portion of the second terminal member, whereby the cylindrical portions of the first and second terminal members have a common axis and a significant axial overlap, and the cylindrical portions of said second and third terminal members have significant axial overlap;

at least two insulated gate semiconductor switching devices disposed in said chamber adjacent said triaxially disposed terminal members, with one of said devices in close radial proximity to said first and second contact areas and the other of said devices in close radial proximity to said second and third contact areas;

low electrical resistance connections between said devices and said contact areas, whereby input and output electrical current of each device can flow through an adjacent pair of said concentric cylindrical terminal portions at substantially equal rates but in opposite directions;

a close spacing between said concentric cylindrical terminal portions, effective to allow the inductances of paired cylindrical terminal portions to significantly negate one another.

2. The module as defined in claim 1 wherein the predetermined distance between the terminal member axis and terminal member contact areas on each terminal member is the same.

3. The module as defined in claim 1 wherein each of the first, second and third contact areas is in a single plane perpendicular to said axis.

4. The module as defined in claim 2 wherein:

each highly contoured circumferential edge on each terminal member flange defines at least one finger extending away from said common axis;

the contact area of each terminal member is on the end of the flange finger of that terminal member; and

the flange fingers are circumferentially spaced about said common axis.

5. The module as defined in claim 4 wherein said contact areas are substantially in the same plane.

6. The module as defined in claim 5 wherein said insulated gate semiconductor switching devices are insulated gate bipolar transistors.

7. The module as defined in claim 3 wherein:

said first terminal member flange has a plurality of circumferentially spaced and outwardly extending fingers, each of which has a first contact area on an outer end thereof;

said third terminal member flange has a plurality of circumferentially spaced and outwardly extending fingers, each of which has a third contact area on an outer end thereof; and

said second terminal member flange has a plurality of circumferentially spaced and outwardly extending fingers, each of which has a second contact area on an outer end thereof, which fingers and second contact areas are circumferentially spaced complementary to spacing of fingers and associated contact areas of said first and third terminal members.

8. The module as defined in claim 7 wherein said fingers are interdigitated.

9. The module as defined in claim 8 wherein:

said contact areas are all the same radial distance from said common axis; and

said contact areas are coplanar.

10. The module as defined in claim 8 wherein

the first contact areas are in a plane other than that occupied by root sections of the first flange fingers;

the third contact areas are in a plane other than that occupied by root sections of the third flange fingers; and

the second contact areas lie in a plane at least close to a plane occupied by root sections of the second flange fingers.

11. The module as defined in claim 10 wherein:

said second and third cylindrical portions are tubular;

all of said contact areas are substantially the same predetermined distance from said common axis; and

said first second and third contact areas are all in the same plane perpendicular to said axis, effective to define a circle of alternating emitter and collector contact areas.

12. The module as defined in claim 11 wherein:

all of the contact areas but one have a similar arcuate length;

the one contact area, that does not have the similar arcuate length, has an arcuate length about twice the arcuate length of the others; and

the input of one of said devices and the output of the other of said devices both connected to said one contact area.

13. The module as defined in claim 11 wherein said insulated gate semiconductor switching devices are insulated gate bipolar transistors.

14. The module as defined in claim 12 wherein said insulated gate semiconductor switching devices are insulated gate bipolar transistors.

15. The module as defined in claim 2 wherein:

the highly contoured circumferential edge of each of said first, second and third flanges defines a plurality of circumferentially spaced enlargements of about the same radial and circumferential size and shape and of about the same thickness on each of said flanges;

the contact areas are disposed on outer ends of said enlargements;

The enlargements are nested together to form a spaced circular array of alternating input and output contact areas;

each of said insulated gate semiconductor switching devices is an insulated gate bipolar transistor; and

each such transistor is disposed on a separate substrate subassembly that is disposed on said housing baseplate.

16. The module as defined in claim 15 wherein:

two adjacent enlargements on the second flange are combined as a single enlargement, that is substantially twice the circumferential size of the other flange enlargements;

an output of one switch is connected to one portion of the single enlargement; and

an input of the other switch is connected to another portion of the single enlargement.

17. A triaxial pretestable and commercially manufacturable terminal member subassembly of low inductance for a high power and high frequency semiconductor switching module, said terminal member subassembly comprising:

a low electrical resistance highly contoured first terminal member, said first terminal member having a cylindrical first terminal portion and also having a radially extending first flange portion, said cylindrical first terminal portion having an axis, said first flange portion having a highly contoured first circumferential edge with an outer extremity providing a first contact area that has an arcuate length, said first contact area being radially spaced from said first terminal portion axis a first predetermined distance, effective to substantially provide a predetermined low electrical resistance between said first contact area and said cylindrical first terminal portion, and further effective to substantially provide a given inductance in said cylindrical first terminal portion with respect to a given electrical current flow;

a low electrical resistance highly contoured second terminal member, said second terminal member having a cylindrical second terminal portion and also having a radially extending second flange portion, said cylindrical second terminal portion having an axis, said second flange portion having a highly contoured second circumferential edge with an outer extremity providing a second contact area that has an arcuate length, said second contact area being radially spaced from said second terminal portion axis a second predetermined distance, effective to substantially provide a predetermined low electrical resistance between said second contact area and said cylindrical second terminal portion, and further effective to substantially provide a predetermined inductance in said cylindrical second terminal portion with respect to said given electrical current flow;

a low electrical resistance highly contoured third terminal member, said third terminal member having a cylindrical third terminal portion and also having a radially extending third flange portion, said cylindrical third terminal portion having an axis, said third flange portion having a highly contoured third circumferential edge with an outer extremity providing a third contact area that has an arcuate length, said third contact area being radially spaced from said third terminal portion axis a predetermined distance, effective to substantially provide a predetermined low electrical resistance between said third contact areas and said cylindrical third terminal portion and to further substantially provide a given inductance in said cylindrical third terminal portion with respect to a given electrical current flow;

a triaxial disposition of said first, second and third cylindrical terminal portions on a common axis, wherein the cylindrical portion of the second terminal member concentrically surrounds the cylindrical portion of the first terminal member and the cylindrical portion of the third terminal member concentrically surrounds the cylindrical portion of the second terminal member, whereby the cylindrical portions of the first and second terminal members have a common axis and a significant axial overlap, and the cylindrical portions of said second and third terminal members have significant axial overlap; and

a close spacing between said concentric cylindrical terminal portions,

effective to form a triaxial terminal member subassembly in which inductances of paired cylindrical terminal portions significantly negate one another.

18. The triaxial terminal member subassembly as defined in claim 17 wherein:

said first terminal member flange has a plurality of circumferentially spaced and outwardly extending fingers, each of which has a first contact area on an outer end thereof;

said third terminal member flange has a plurality of circumferentially spaced and outwardly extending fingers, each of which has a third contact area on an outer end thereof; and

said second terminal member flange has a plurality of circumferentially spaced and outwardly extending fingers, each of which has a second contact area on an outer end thereof, which fingers and second contact areas are circumferentially spaced complementary to spacing of fingers and associated contact areas of said first and third terminal members.

19. The triaxial terminal member suassembly as defined in claim 18 wherein:

said contact areas are all the same radial distance from said common axis;

said fingers are interdigitated; and

all of said contact areas are coplanar.

20. The triaxial terminal member subassembly as defined in claim 19 wherein:

the first contact areas are in a plane other than that occupied by root sections of the first flange fingers;

the third contact areas are in a plane other than that occupied by root sections of the third flange fingers; and

the second contact areas lie in a plane at least close to a plane occupied by root sections of the second flange fingers.