Solid-state micro proximity sensor

• US 5,512,836 A
• Filed: 07/26/1994
• Issued: 04/30/1996
• Est. Priority Date: 07/26/1994
• Status: Expired due to Fees

• Current Assignee: Ren C. Luo, Zhenhai Chen
• Original Assignee: Ren C. Luo, Zhenhai Chen
• Inventors: Chen, Zhenhai, Luo, Ren C.
• Primary Examiner(s): Regan, Maura K.
• Application Number:
  US08/280,799
• Time in Patent Office: 644 Days
• Field of Search: 324/662, 324/663, 324/671, 324/687, 324/690, 361/278, 361/280, 361/281
• US Class Current: 324/687
• CPC Class Codes: G01B 7/023 for measuring distance between sensor and object G01B7/082 and G01B7/102 take precedence
• CPC Class Codes: G01D 5/2405 by varying dielectric
• CPC Class Codes: G01V 3/088 operating with electric fields G01V3/082 takes precedence
• CPC Class Codes: H03K 17/955 using a capacitive detector
• CPC Class Codes: H03K 2017/9602 characterised by the type or shape of the sensing electrodes

Abstract

A solid-state fringe effect capacitive proximity sensor is described which lends itself to use for surface mounting and other space constrained applications. The sensor comprises an insulating substrate having a plurality of sensing electrodes formed thereon and without any screen elements therebetween. The electrodes are adapted to measure the proximity distance of a target object (conductive or non-conductive) by means of the fringe capacitance effect created between the electrodes. Capacitance measurement processing circuitry is electrically connected to the plurality of sensory electrodes.

Claims

1. A solid-state fringe effect micro capacitive proximity sensor, said proximity sensor comprising:

an insulating substrate;

a plurality of sensing electrodes formed on said insulating substrate in closely spaced relationship and without any screen element therebetween, said electrodes adapted to measure the proximity distance of a target object by means of the fringe capacitance effects created between said electrodes and wherein the distance range between said electrodes is 1 micrometer to electrode width; and

capacitance measurement processing circuitry electrically connected to said plurality of sensing electrodes.

2. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said insulating substrate comprises silica (SiO₂) wafer.

3. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said insulating substrate comprises sapphire (Al₂ O₃) wafer.

4. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said insulating substrate comprises flexible polyimide film.

5. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of sensing electrodes comprises an etch of a chrome layer.

6. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of sensing electrodes comprises an etch of gold and chrome layers.

7. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of electrodes defines a plurality of concentric circles pattern.

8. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of electrodes defines a plurality of concentric squares pattern.

9. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of electrodes defines a comb pattern.

10. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said capacitance measurement processing circuitry is electrically connected to but spaced-apart from said insulating substrate and is fabricated on a non-insulating substrate.

11. A solid-state fringe effect capacitive proximity sensor according to claim 1 wherein said capacitance measurement processing circuitry is formed as an integral part of said proximity sensor.

12. A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein a protective layer is provided over said sensing electrodes.

23. A state fringe effect micro capacitive proximity sensor according to claim 10 wherein the non-insulating substrate is selected from the group consisting of silicon and gallium-arsenic.

13. A solid-state fringe effect micro capacitive proximity sensor, said proximity sensor comprising:

a substrate;

capacitance measurement processing circuitry formed on said substrate so as to become an integral part of said proximity sensor;

an insulating layer deposited on the combination of processing circuitry and substrate; and

a plurality of sensing electrodes formed on said insulating layer in closely spaced relationship and without any screen element therebetween, said electrodes being electrically connected to said processing circuitry and adapted to measure the proximity distance of a target object by means of the fringe capacitance effects created between said electrodes and wherein the distance range between said electrodes is 1 micrometer to electrode width.

14. A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said substrate comprises silicon (Si) wafer.

15. A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said substrate comprises gallium arsenic (GaAs) wafer.

16. A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said plurality of sensing electrodes comprises an etch of a chrome layer.

17. A solid-state fringe effect capacitive proximity sensor according to claim 13 wherein said plurality of sensing electrodes comprises an etch of gold and chrome layers.

18. A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said plurality of electrodes defines a plurality of concentric circles pattern.

19. A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said plurality of electrodes defines a plurality of concentric squares pattern.

20. A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said plurality of electrodes defines a comb pattern.

21. A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said insulating layer comprises polyimide film.

22. A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein a protective layer is provided over said sensing electrodes.