Synchronous memory packaged in single/dual in-line memory module and method of fabrication

• US 5,513,135 A
• Filed: 12/02/1994
• Issued: 04/30/1996
• Est. Priority Date: 12/02/1994
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Feng, George C., Farah, Lina S., Dell, Timothy J., Kellogg, Mark W.
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): DINH, SON T
• Application Number:
  US08/349,154
• Time in Patent Office: 515 Days
• Field of Search: 365/52, 365/63, 365/230.03, 365/51
• US Class Current: 365/52
• CPC Class Codes: G11C 5/04 Supports for storage elements , e.g. memory modules; Mounting or fixing of storage elements on such supports
• CPC Class Codes: G11C 5/06 Arrangements for interconnecting storage elements electrically, e.g. by wiring

Abstract

Multiple synchronous dynamic random access memories (SDRAMs) are packaged in a single or a dual in-line memory module to have similar physical and architectural characteristics of dynamic random access memories (DRAMs) packaged in single/dual in-line memory modules. A 168 pin SDRAM DIMM family is presented which requires no modification of existing connector, planar or memory controller components. The 168 pin SDRAM DIMM family includes 64 bit non-parity, 72 bit parity, 72 bit ECC and 80 bit ECC memory organizations. Special placement and wiring of decoupling capacitors about the SDRAMs and the buffer chips contained within the module are also presented to reduce simultaneous switching noises during read and write operations. A special wiring scheme for the decoupling capacitors is employed to reduce wiring inductance.

Claims

1. A dual in-line memory module (DIMM) comprising:

a printed circuit board having a front side and a back side and 168 connector pin locations corresponding to 168 pin connectors of a standard dynamic random access memory (DRAM) DIMM interface;

multiple standard synchronous dynamic random access memories (SDRAMs) mounted on said front side and said back side of said printed circuit board; and

means for electrically connecting said multiple SDRAMs to said 168 connector pin locations such that a functional DIMM is defined for said SDRAMs.

2. The DIMM of claim 1, wherein connector pin locations 1-84 are on the front side of said printed circuit board and connector pin locations 85-168 are on the back side of said printed circuit board, and wherein connector pin locations 42 and 125 comprise a first clock signal (CLK0) pin and a second clock signal (CLK1) pin, respectively.

3. The DIMM of claim 2, wherein assigned connector pin locations adjacent to said CLK0 pin and said CLK1 pin each comprise either a voltage pin or a ground pin.

4. The DIMM of claim 3, wherein connector pin location 41 comprises a reference voltage (Vref) pin, connector pin location 43 comprises a ground (Vss) pin, connector pin location 124 comprises a power supply voltage (Vcc) pin, connector pin location 126 is unassigned and connector pin location 127 comprises a ground (Vss) pin.

5. The DIMM of claim 1, wherein connector pin locations 1-84 are disposed on the front side of said printed circuit board and connector pin locations 85-168 are disposed on the back side of said printed circuit board, and wherein connector pin locations 28, 29, 46, 47, 112, 113, 130 &

131 comprise data input/output mask (DQM) pins.

6. The DIMM of claim 5, wherein connector pin locations 30, 45, 114 and 129 comprise chip select (CS) pins.

7. The DIMM of claim 6, wherein connector pin locations 111 and 115 comprise a synchronous column address strobe (SCAS) pin and a synchronous row address strobe (SRAS) pin, respectively.

8. The DIMM of claim 7, wherein connector pin location 42 comprises a first clock (CLK0) pin, connector pin location 125 comprises a second clock (CLK1) pin, and connector pin location 128 comprises a clock enable (CKE) pin.

9. The DIMM of claim 8, wherein the DIMM comprises one of a x64 non-parity SDRAM DIMM, a x72 parity SDRAM DIMM, a x72 ECC SDRAM DIMM, and a x80 ECC SDRAM DIMM.

24. The SDRAM DIMM of claim 1, wherein data input/output mask (DQM) lines of said SDRAMs are assigned to pins corresponding to column enable (CE) pin connectors of said 168 pin DRAM DIMM connector.

10. A dual in-line memory (DIMM) module comprising:

a printed circuit board having a first side, a second side, and a connector edge, said connector edge having a plurality of electrical contacts on said first side and said second side;

a set of first memory elements arranged on the first side of said printed circuit board, at least some of said first memory elements having data lines and control lines coupled to selected electrical contacts of said plurality of electrical contacts on said connector edge of said printed circuit board;

a set of second memory elements arranged on the second side of said printed circuit board, at least some of said second memory elements also having data lines and control lines coupled to selected electrical contacts of said plurality of electrical contacts on said connector edge of said printed circuit board; and

a plurality of first capacitive means and a plurality of second capacitive means, each first capacitive means being associated with one of said at least some first memory elements and said at least some second memory elements having data lines and control lines coupled to said selected electrical contacts on said connector edge of said printed circuit board, and each second capacitive means also being associated with one of said at least some first memory elements and said at least some second memory elements having said data lines and said control lines coupled to said selected electrical contacts on said connector edge of said printed circuit board, wherein each of said at least some first memory elements and said at least some second memory elements has associated therewith both a first capacitive means and a second capacitive means, said associated first capacitive means being disposed and connected to function as a data line decoupling capacitor and said associated second capacitive means being disposed and connected to function as a control line decoupling capacitor.

11. The DIMM of claim 10, wherein each memory element of said set of first memory elements and said set of second memory elements has a first end and a second end, and wherein each first capacitive means is disposed at the first end the associated memory element and each second capacitive means is disposed at the second end of the associate memory element of said at least some first memory elements and said at least some second memory elements having associated therewith both a first capacitive means and a second capacitive means.

12. The DIMM of claim 11, further comprising a first set of electrical interconnects and a second set of electrical interconnects, said first of electrical interconnects being disposed to electrically connect said data lines and control lines of said at least some first memory elements and said at least some second memory elements to said selected electrical contacts of said plurality of electrical contacts on said connector edge of the printed circuit board, said second set of electrical interconnects being disposed to electrically connect each first capacitive means and second capacitive means to the associated one of said at least some first memory elements and said second memory elements having associated therewith both a first capacitive means and a second capacitive means, and wherein each electrical interconnect of said second set of electrical interconnects has an identical cross-sectional area and each electrical interconnect of said first set of electrical interconnects has an identical cross-sectional area, and wherein the cross-sectional area of the electrical interconnects of the second set of electrical interconnects is greater than the cross-sectional area of the electrical interconnects in the first set of electrical interconnects.

13. The DIMM of claim 12, wherein the cross-sectional area of the electrical interconnects in said second set of electrical interconnects is approximately 3 times larger than the cross-sectional area of the electrical interconnects in said first set of electrical interconnects.

14. The DIMM of claim 13, wherein at least some of the electrical interconnects of said second set of electrical interconnects connect to the associated memory element at multiple contact points such that wiring inductance is reduced.

15. The DIMM of claim 10, wherein said first memory elements and said second memory elements comprise synchronous dynamic random access memories (SDRAMs).

16. The DIMM of claim 15, wherein the DIMM comprises one of a x64 non-parity SDRAM DIMM, a x72 parity SDRAM DIMM, a x72 ECC SDRAM DIMM and a x80 ECC SDRAM DIMM.

17. A single in-line memory module (SIMM) comprising:

a printed circuit board having a planar surface and a connector edge, said connector edge having a plurality of electrical contacts;

a set of memory elements arranged on the planar surface of the printed circuit board, at least some of the memory elements having data lines and control lines coupled to selected electrical contacts of the plurality of electrical contacts on the connector edge of the printed circuit board; and

a plurality of first capacitive means and a plurality of second capacitive means, each first capacitive means being associated with one of said at least some memory elements having data lines and control lines coupled to said selected electrical contacts on the connector edge of the printed circuit board, and each second capacitive means also being associated with one of the at least some memory elements having data lines and control lines coupled to the selected electrical contacts on the connector edge of the printed circuit board, wherein each of said at least some memory elements has associated therewith a first capacitive means of said plurality of first capacitive means and a second capacitive means of said plurality of second capacitive means, each associated first capacitive means being disposed and connected to function as a data line decoupling capacitor and each associated second capacitive means being disposed and connected to function as a control line decoupling capacitor.

18. The SIMM of claim 17, wherein said memory elements comprise synchronous dynamic random access memories (SDRAMs).

19. The SIMM of claim 18, where each memory element has a first end and a second end, and wherein each first capacitive means is disposed at the first of the associated memory element and each second capacitive means is disposed at the second ends of the associated memory element and each second capacitive means is disposed at the second end of the associated memory element.

20. A method for defining an "x" pin dual in-line memory module (DIMM) for synchronous dynamic random access memories (SDRAMs) from a standard "x" pin DIMM for dynamic random access memories (DRAMs) having column enable (CE) and row enable (RE) pins, said method comprising the steps of:

(a) reassigning column enable (CE) pins and row enable (RE) pins of said "x" pin DIMM design for DRAMs to data input/output mask (DQMs) pins and chip select (CS) pins, respectively;

(b) reassigning at least one pin of said "x" pin DIMM design for DRAMs to comprise a synchronous clock (CLK) pin; and

(c) reassigning at least one pin of said "x" pin DIMM design for DRAMs to comprise a synchronous column address strobe (SCAS) pin and one pin of said "x" pin DIMM design for DRAMs to comprise a synchronous row address strobe (SRAS) pin,

wherein upon completion of said steps (a)-(c) a functional "x" pin DIMM design for SDRAMs is defined from the standard "x" pin DIMM design for DRAMs.

21. The method of claim 20, wherein "x" equals 168 such that said method comprises defining a 168 pin SDRAM DIMM from a 168 DRAM DIMM, and wherein said reassigning step (b) includes assigning a first unassigned pin of said 168 DRAM DIMM to comprise a first synchronous clock (CLK0) pin, assigning a second unassigned pin of said 168 DRAM DIMM to comprise a second synchronous clock (CLK1) pin, and assigning a third unassigned pin of said 168 pin DRAM DIMM to comprise a clock enable (CLKE) pin.

22. The method of claim 21, wherein said 168 pin DRAM DIMM includes pins 1-84 disposed on a first side of a printed circuit board and pins 85-168 disposed on a second side of the printed circuit board, and wherein said reassigning step (b) includes assigning pins 42 and 125 to comprise the first synchronous clock (CLK0) and second synchronous clock (CLK1) pin, respectively.

23. The method of claim 20, further comprising the step of providing a first capacitor and a second capacitor pair in association with each SDRAM of the "x" pin SRAM DIMM formed from the standard "x" pin DRAM DIMM, the first capacitor and the second capacitor of each first capacitor and second capacitor pair comprising decoupling capacitors connected to function as a data line decoupling capacitor and a control line decoupling capacitor.

25. The SDRAM DIMM of claim 23, wherein chip select (CS) lines of said SDRAMs are assigned to pins corresponding to row enable (RE) pin connectors of said 168 pin DRAM DIMM connector.