Automated direct patterned wafer inspection

• US 5,513,275 A
• Filed: 06/09/1994
• Issued: 04/30/1996
• Est. Priority Date: 01/12/1993
• Status: Expired due to Fees

• Current Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford University)
• Original Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford University)
• Inventors: Aghajan, Hamid K., Khalaj, Babak H., Kailath, Thomas
• Primary Examiner(s): Boudreau, Leo
• Assistant Examiner(s): ANDERSON, DAVID
• Application Number:
  US08/257,236
• Time in Patent Office: 691 Days
• Field of Search: 382/1, 382/8, 382/16, 382/17, 382/144, 382/145, 382/149, 382/147, 382/148, 382/299, 356/237, 348/86, 348/87, 348/94, 348/126
• US Class Current: 382/149
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 7/0004 Industrial image inspection
• CPC Class Codes: G06T 7/97 Determining parameters from multiple pictures depth or shape recovery from multiple images G06T7/55; stereo camera calibration G06T7/85

Abstract

Disclosed is a new self-reference signal processing technique for detecting the location of any nonregularities and defects in a periodic two-dimensional signal or image. Using high-resolution spectral estimation algorithms, the proposed technique first extracts the period and structure of repeated patterns from the image to sub-pixel resolution in both directions, and then produces a defect-free reference image for making comparison with the actual image. Since the technique acquires all its needed information from a single image, on the contrary to the existing methods, there is no need for a database image, a scaling procedure, or any apriori knowledge about the repetition period of the patterns.

Claims

1. A method of inspecting a two dimensional periodic image of a semiconductor device and a photomask as used in semiconductor device fabrication for irregularities and defects comprising the steps of

a) estimating repetition periods of patterns in horizontal and vertical directions in said image,

b) extracting a building block of said image based on said repetition periods including obtaining a sub-pixel weighted sum of repeated patterns throughout said image, and

c) subtracting shifted versions of said building block from said image to locate defects and irregularities.

2. The method as described in claim 1 wherein step

a) includes providing a one dimensional projection of each row and each column and estimating a fundamental frequency in each one dimensional projection.

3. The method as described in claim 1 wherein step

c) includes subtracting each point of said image with eight neighboring points of the corresponding point in said building block, and assigning each point the minimum absolute value of the eight differences.

4. A method of inspecting a two dimensional periodic image of a semiconductor device and a photomask as used in semiconductor device fabrication for irregularities and defects comprising the steps of

a) estimating repetition periods of patterns in horizontal and vertical directions in said image,

b) extracting a building block of said image based on said repetition periods including obtaining a sub-pixel weighted sum of repeated patterns throughout said image, and

c) locating defects and irregularities in said image based on said building block.