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Manufacturing method for diamond semiconductor device

  • US 5,514,603 A
  • Filed: 05/06/1994
  • Issued: 05/07/1996
  • Est. Priority Date: 05/07/1993
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a diamond semiconductor device, comprising the steps of:

  • forming a diamond semiconductor layer on a substrate; and

    doping nitrogen atoms into the diamond semiconductor layer by using a high density plasma of 1×

    1011 -1×

    1014 cm-3 to thereby form a diffusion layer in the diamond semiconductor layer.

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