Manufacturing method for diamond semiconductor device

• US 5,514,603 A
• Filed: 05/06/1994
• Issued: 05/07/1996
• Est. Priority Date: 05/07/1993
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Sato, Junichi
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US08/330,574
• Time in Patent Office: 732 Days
• Field of Search: 437/16, 437/17, 437/100, 437/165, 437/166, 148/DIG. 148
• US Class Current: 438/105
• CPC Class Codes: H01L 21/041 Making n- or p-doped regions

Abstract

A process of forming a semiconductor which allows n type doping to be applied to a diamond semiconductor layer is carried out so as to form a diamond semiconductor layer on a substrate, forming a layer of SiO₂ over the diamond semiconductor layer and forming a resist pattern (14) over the SiO₂ layer. Etching processing of the SiO₂ layer via the resist pattern is carried out. Then, the exposed diamond layer is subjected to doping process under the following conditions; N₂ =30_SCCM'"'"', 1.33 Pa, 100° C., microwave 850 W (2.45 GHz), RF bias 0 W, pulse duty ratio 1:2, a pulse type supply being used for microwave irradiation. Damage to the material by this process imparts high density, doping to the diamond layer. High saturation doping is possible according to this process.

Claims

1. A method of manufacturing a diamond semiconductor device, comprising the steps of:

forming a diamond semiconductor layer on a substrate; and

doping nitrogen atoms into the diamond semiconductor layer by using a high density plasma of 1×

10¹¹ -1×

10¹⁴ cm^-3 to thereby form a diffusion layer in the diamond semiconductor layer.

2. A method as claimed in claim 1, wherein said high density plasma comprises an ECR plasma produced by pulse microwave.

3. A method as claimed in claim 2, further comprising a dry cleaning step for cleaning a surface of the diamond semiconductor layer before the doping process.

4. A method as claimed in claim 3, wherein said dry cleaning step is conducted using the ECR plasma.

5. A method as claimed in claim 3, wherein said dry cleaning and doping steps are both carried out in a plasma chamber.

6. A method as claimed in claim 1, wherein said doping is conducted to an exposed portion of the diamond semiconductor layer after forming a patterned insulating layer and a resist layer.

7. A method as claimed in claim 3, wherein said dry cleaning step is conducted by using an etching gas of N₂ O.

8. A method as claimed in claim 1, wherein said high density plasma is produced by continuous microwave irradiation.

9. A method as claimed in claim 1, further comprising a dry cleaning step for cleaning a surface of the diamond semiconductor layer before the doping process.