Method and apparatus for particle reduction from semiconductor wafers

• US 5,516,369 A
• Filed: 05/06/1994
• Issued: 05/14/1996
• Est. Priority Date: 05/06/1994
• Status: Expired due to Term

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Dang, Yu-Min, Lur, Water
• Primary Examiner(s): Czaja, Donald E.
• Assistant Examiner(s): VINCENT, SEAN E
• Application Number:
  US08/238,876
• Time in Patent Office: 739 Days
• Field of Search: 134/1, 134/1.3, 134/902, 15/1.51, 437/946, 156/643
• US Class Current: 134/1.3
• CPC Class Codes: B08B 7/0035 by radiant energy, e.g. UV, laser, light beam or the like
• CPC Class Codes: H01L 21/02046 Dry cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/67028 for cleaning followed by drying, rinsing, stripping, blasting or the like
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A method of removing particles from the surface of an integrated circuit is achieved by means of a cleaning device and method to remove particles from the surface of a semiconductor wafer. The cleaning device comprises a clean chamber wherein the semiconductor wafer is irradiated by electron flux whereby an electric repulsive force between the wafer surface and the particles will remove the particles from the wafer surface. The device further comprises a neutralization chamber wherein the semiconductor wafer is neutralized to prevent new particles from being attracted to the cleaned surface of the semiconductor wafer. A vacuum system is connected to the clean chamber and the neutralization chamber wherein the vacuum system will carry away the particles removed from the semiconductor wafer surface within the clean chamber.

Claims

1. A cleaning device to remove particles from the conductive layer surface of a semiconductor wafer comprising:

a clean chamber comprising means to irradiate said semiconductor wafer by electron flux whereby an electric repulsive force between said semiconductor wafer surface and said particles will remove said particles from said wafer surface into the ambient within said clean chamber;

a neutralization chamber comprising means to apply a ground to said semiconductor wafer whereby said semiconductor wafer is neutralized to prevent new particles from being attracted to the cleaned surface of said semiconductor wafer; and

a vacuum system connected to said clean chamber and said neutralization chamber wherein said vacuum system will carry away said particles removed from said semiconductor wafer surface into the ambient within said clean chamber.

2. The device of claim 1 wherein said electron flux is generated by an electron gun within said clean chamber.

3. The device of claim 1 wherein said clean chamber further comprises an electron gun chamber for generating said electron flux comprising:

an electron gun;

a focus system;

an acceleration system; and

a scanning system.

4. The device of claim 1 wherein said electron flux is comprised of short bursts of electrons and wherein said electron flux causes moderate charging to take place on both said particles and said semiconductor wafer surface causing said electric repulsive force.

5. A method of removing particles from the conductive layer surface of a semiconductor wafer within a clean chamber comprising:

irradiating said semiconductor wafer by electron flux whereby an electric repulsive force between said semiconductor wafer surface and said particles will remove said particles from said semiconductor wafer surface into the ambient within said clean chamber; and

neutralizing said wafer by applying a ground to said wafer to prevent new particles from being attracted to the cleaned surface of said semiconductor wafer.

6. The method of claim 5 wherein said semiconductor wafer is cleaned under vacuum and wherein a vacuum pump carries away said particles removed from the surface of said wafer into the ambient within said clean chamber.

7. The method of claim 5 wherein said electron flux is generated by an electron gun.

8. The method of claim 5 wherein said electron flux is comprised of short bursts-of electrons and wherein said electron flux causes moderate charging to take place on both said particles and said semiconductor wafer surface causing said electric repulsive force.

9. A cleaning device to remove particles from the dielectric layer surface of a semiconductor wafer comprising:

a clean chamber comprising means to irradiate said semiconductor wafer by electron flux comprising short bursts of electrons wherein said electron flux causes moderate charging to take place on both said particles and said semiconductor wafer surface causing an electric repulsive force whereby said electric repulsive force will remove said particles from said wafer surface;

a neutralization chamber comprising means to irradiate said semiconductor wafer with a hydrogen ion flux whereby said semiconductor wafer is neutralized to prevent new particles from being attracted to the cleaned surface of said semiconductor wafer; and

a vacuum system connected to said clean chamber and said neutralization chamber wherein said vacuum system will carry away said particles removed from said semiconductor wafer surface within said clean chamber.

10. The device of claim 9 wherein said electron flux is generated by an electron gun within said clean chamber.

11. The device of claim 9 wherein said clean chamber further comprises an electron gun chamber for generating said electron flux comprising:

an electron gun;

a focus system;

an acceleration system; and

a scanning system.

12. The device of claim 9 wherein said hydrogen ion flux is generated by a hydrogen gun within said neutralization chamber.

13. A cleaning device to remove particles from the dielectric layer surface of a semiconductor wafer comprising:

irradiating said semiconductor wafer by electron flux comprising short bursts of electrons wherein said electron flux causes moderate charging to take place on both said particles and said semiconductor wafer surface causing an electric repulsive force between said semiconductor wafer surface and said particles whereby said particles will be removed from said semiconductor wafer surface; and

neutralizing said wafer by irradiation with a hydrogen ion flux to prevent new particles from being attracted to the cleaned surface of said semiconductor wafer.

14. The method of claim 13 wherein said semiconductor wafer is cleaned under vacuum and wherein a vacuum pump carries away said particles removed from the surface of said wafer.

15. The method of claim 13 wherein said electron flux is generated by an electron gun.

16. The method of claim 13 wherein said hydrogen ion flux is generated by a hydrogen gun.