Contactless real-time in-situ monitoring of a chemical etching

• US 5,516,399 A
• Filed: 06/30/1994
• Issued: 05/14/1996
• Est. Priority Date: 06/30/1994
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Wong, Justin Wai-chow, Balconi-Lamica, Michael J., Barbee, Steven G., Hsiao, Yiping, Li, Leping, Ratzlaff, Eugene H., Heinz, Tony F.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US08/269,863
• Time in Patent Office: 684 Days
• Field of Search: 156/626.1, 156/627.1, 156/657.1, 156/662.1, 156/345, 204/129.2
• US Class Current: 438/8
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, wherein the at least two electrodes are proximate to but not in contact with the at least one wafer, and further wherein said two electrodes are positioned on the same side of the wafer; and monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.

Claims

1. A contactless method for real-time in-situ monitoring of a chemical etching process during etching of at least one wafer in a wet chemical etchant bath, said method comprising the steps of:

a) providing two conductive electrodes in the wet chemical bath, wherein said two electrodes are proximate to but not in contact with the at least one wafer, and further wherein said two electrodes are positioned on the same side of the wafer; and

b) monitoring an electrical characteristic between the two electrodes, wherein a change in the electrical characteristic is indicative of a state of the etching process.

2. The method of claim 1, wherein the monitoring of an electrical characteristic in step (b) comprises monitoring impedance and further wherein the change in the electrical characteristic comprises a change in impedance.

3. The method of claim 2, wherein the monitoring of an electrical characteristic in step (b) comprises monitoring impedance and further wherein the change in the electrical characteristic comprises a change in a component of impedance, wherein said component is selected from the group consisting of admittance, reactance, resistance, capacitance, and inductance.

4. The method of claim 1, wherein the state in step (b) comprises an etching end point.

5. The method of claim 1, further comprising the step of controlling the etching process in response to the monitoring of the change in the electrical characteristic.

6. A contactless real-time in-situ chemical etch monitor for providing an indication of a state of an etching process during etching of at least one wafer in a wet chemical etchant bath, said monitor comprising:

a) two conductive electrodes;

b) a means for positioning said two conductive electrodes inside the wet chemical etchant bath proximate to but not in contact with the at least one wafer, wherein said two electrodes are positioned on the same side of the wafer; and

c) a means for monitoring an electrical characteristic between the two electrodes, wherein a change in the electrical characteristic is indicative of a state of the etching process.

7. The monitor of claim 6, wherein the monitoring means comprises an impedance monitor and further wherein the change in the electrical characteristic comprises a change in impedance.

8. The monitor of claim 7, wherein the monitoring means comprises an impedance monitor and further wherein the change in the electrical characteristic comprises a change in a component of impedance, wherein said component is selected from the group consisting of admittance, reactance, resistance, capacitance, and inductance.

9. The monitor of claim 6, wherein the state in means (c) comprises an etching end point.

10. The monitor of claim 6, further comprising a means of controlling the etching process in response to the monitoring of the change in the electrical characteristic.

11. The monitor of claim 6, further comprising a means for rigidly positioning said at least one wafer inside the wet chemical etchant bath a fixed distance from the two electrodes.

12. The monitor of claim 11, wherein said means for rigidly positioning said at least one wafer is adjustable to a plurality of distances between the wafer and the two electrodes.

13. An etch station having contactless real-time in-situ control of an etching process during etching of at least one wafer in a wet chemical etchant bath, said etch station comprising:

a) two conductive electrodes;

b) a means for positioning said two conductive electrodes inside the wet chemical etchant bath proximate to but not in contact with the at least one wafer, wherein said two electrodes are positioned on the same side of the wafer;

c) a means for monitoring an electrical characteristic between the two electrodes, wherein a change in the electrical characteristic is indicative of a state of the etching process; and

d) a means for controlling the etching process in response to the monitoring of the change in the electrical characteristic.

14. The etch station of claim 13, wherein the monitoring means comprises an impedance monitor and further wherein the change in the electrical characteristic comprises a change in impedance.

15. The etch station of claim 14, wherein the monitoring means comprises an impedance monitor and further wherein the change in the electrical characteristic comprises a change in a component of impedance, wherein said component is selected from the group consisting of admittance, reactance, resistance, capacitance, and inductance.

16. The etch station of claim 13, wherein the state in means (c) comprises an etching end point.

17. The etch station of claim 13, further comprising a means for rigidly positioning said at least one wafer inside the wet chemical etchant bath a fixed distance from the two electrodes.

18. The etch station of claim 17, wherein said means for rigidly positioning said at least one wafer is adjustable to a plurality of distances between the wafer and the two electrodes.