Semiconductor device including three-dimensionally disposed logic elements for improving degree of integration

• US 5,517,038 A
• Filed: 11/28/1994
• Issued: 05/14/1996
• Est. Priority Date: 08/11/1992
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Maeda, Shigenobu, Kuriyama, Hirotada
• Primary Examiner(s): Crane, Sara W.
• Assistant Examiner(s): BOWERS, COURTNEY
• Application Number:
  US08/348,211
• Time in Patent Office: 533 Days
• Field of Search: 257/903, 257/904, 257/69, 257/72, 257/225, 257/292, 257/67, 365/181, 365/188
• US Class Current: 257/69
• CPC Class Codes: G11C 11/412 using field-effect transistors only
• CPC Class Codes: G11C 11/418 Address circuits
• CPC Class Codes: G11C 11/419 Read-write [R-W] circuits
• CPC Class Codes: H10B 10/125 the MOSFET being a thin film transistor [TFT]
• CPC Class Codes: Y10S 257/903 FET configuration adapted for use as static memory cell
• CPC Class Codes: Y10S 257/904 with passive components,, e.g. polysilicon resistors

Abstract

Adjacent memory cells has a two-layer structure formed of first layer and second layer. The first layer is provided with driver transistors of the memory cell, access transistors of the memory cell, and driver transistors formed of the memory cell. The second layer is provided with load transistors of the memory cell, load transistors and of the memory cell, and access transistors of the memory cell. The transistors formed in the first layer are of an NMOS type, and the transistors formed in the second layer are of a PMOS type.

Claims

1. A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein

said first memory cell includes:

a pair of first driver transistors forming a part of a first flip-flop;

a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors;

first supply potential applying means connected to each of said first load transistors for applying a supply potential;

first ground potential applying means connected to each of said first driver transistors for applying a ground potential;

a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors;

a pair of first bit lines each connected to a respective one of said first access transistors; and

a first word line connected to a gate electrode of each of said first access transistors; and

said second memory cell includes;

a pair of second driver transistors forming a part of a second flip-flop;

a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors;

second supply potential applying means connected to each of said second load transistors for applying a supply potential;

second ground potential applying means connected to each of said second driver transistors for applying a ground potential;

a pair of second access transistors each being connected to a connection portion between each of said second driver transistors and each of said second load transistors;

a pair of second bit lines each connected to a respective one of said second access transistors; and

a second word line connected to a gate electrode of each of said second access transistors;

wherein

said first and second memory cells each have only a single pair of access transistors, and

said first and second driver transistors and said first access transistors are of a first conductivity type, and said first and second load transistors and said second access transistors are of a second conductivity type.

3. A semiconductor memory device according to claim 1, wherein

the transistors of said second conductivity type include an SOI transistor.

4. A semiconductor memory device according to claim 1, wherein

the first and second driver transistors of said first conductivity type have a first interconnection pattern and the first and second load transistors of the second conductivity type have a second interconnection pattern, identical to said first interconnection pattern.

5. A semiconductor memory device according to claim 1, wherein

said first memory cell is selected when said first word line attains a first potential level, and

said second memory cell is selected when said second word line attains a second potential level.

6. A semiconductor memory device according to claim 1, wherein

the transistors of said first conductivity type are n-channel MOS transistors, and the transistors of said second conductivity type are p-channel MOS transistors.

7. A semiconductor memory device according to claim 1, wherein

one bit line of said first bit line pair being common with one bit line of said second bit line pair.

2. A semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein

said first memory cell includes:

a pair of first driver transistors forming a part of a first flip-flop;

a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors;

first supply potential applying means connected to each of said first load transistors for applying a supply potential;

first ground potential applying means connected to each of said first driver transistors for applying a ground potential;

a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors;

a pair of first bit lines each connected to a respective one of said first access transistors; and

a first word line connected to a gate electrode of each of said first access transistors; and

said second memory cell includes;

a pair of second driver transistors forming a part of a second flip-flop;

a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors;

second supply potential applying means connected to each of said second load transistors for applying a supply potential;

second ground potential applying means connected to each of said second driver transistors for applying a ground potential;

a pair of second access transistors each being connected to a connection portion between each of said second driver transistors and each of said second load transistors;

a pair of second bit lines each connected to a respective one of said second access transistors; and

a second word line connected to a gate electrode of each of said second access transistors; and

wherein

said first and second driver transistors and said first access transistors are of a first conductivity type, and said first and second load transistors and said second access transistors are of a second conductivity type,

the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate,

the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween,

the number of transistors in the first layer is equal to the number of transistors in the second layer, and

said second access transistors are located above the first access transistors.

8. A semiconductor memory device comprising:

a first memory cell being a 2/4 type; and

a second memory cell being a 4/2 type, each of said first and second memory cells having

driver transistors formed in a first layer and load transistors formed in a second layer with an insulator layer formed therebetween,

a ground line formed in said first layer,

a power supply line formed in said second layer,

a first capacitor formed between the ground line and a first interconnection line connected between a first contact and a gate of one of the driver transistors through a second insulator layer, and

a second capacitor formed between the power supply line and a second interconnection line connected between a second contact and a gate of one of the load transistors through a third insulator layer.

9. A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein

said first memory cell includes:

a pair of first driver transistors forming a part of a first flip-flop;

a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors;

first supply potential applying means connected to each of said first load transistors for applying a supply potential;

first ground potential applying means connected to each of said first driver transistors for applying a ground potential;

a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors;

a pair of first bit lines each connected to a respective one of said first access transistors; and

a first word line connected to a gate electrode of each of said first access transistors; and

said second memory cell includes;

a pair of second driver transistors forming a part of a second flip-flop;

a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors;

second supply potential applying means connected to each of said second load transistors for applying a supply potential;

second ground potential applying means connected to each of said second driver transistors for applying a ground potential;

a pair of second access transistors each being connected to a connection between each of said second driver transistors and each of said second load transistors;

a pair of second bit lines each connected to a respective one of said second access transistors; and

a second word line connected to a gate electrode of each of said second access transistors; and

wherein

said first and second memory cells each have only a single pair of access transistors,

said first and second driver transistors, one of said first access transistors and one of said second access transistors are only of a first conductivity type, and

said first and second load transistors, the other of said first access transistors and the other of said second access transistors are only of a second conductivity type opposite to said first conductivity type.

10. A semiconductor memory device according to claim 9, wherein

the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and

the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween.

11. A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein

said first memory cell includes

a pair of first driver transistors forming a part of a first flip-flop,

a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors,

first supply potential applying means connected to each of said first load transistors for applying a supply potential,

first ground potential applying means connected to each of said first driver transistors for applying a ground potential,

a pair of first access transistors each being connected to a connection portion between each of said first driver transistors and each of said first load transistors,

a pair of first bit lines each connected to a respective one of said first access transistors, and

a first word line connected to a gate electrode of each of said first access transistors;

and

said second memory cell includes

a pair of second driver transistors forming a part of a second flip-flop,

a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors,

second supply potential applying means connected to each of said second load transistors for applying a supply potential,

second ground potential applying means connected to each of said second driver transistors for applying a ground potential;

a pair of second access transistors each being connected to a connection between each of said second driver transistors and each of said second load transistors,

a pair of second bit lines each connected to a respective one of said second access transistors, and

a second word line connected to a gate electrode of each of said second access transistors; and

wherein

said first and second driver transistors, one of said first access transistors and one of said second access transistors are of a first conductivity type; and

said first and second load transistors, the other of said first access transistors and the other of said second access transistors are of a second conductivity type opposite to said first conductivity type,

the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate,

the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween, and

the other of said first access transistors is located above the one of the second access transistors.

12. A static semiconductor memory device including a first memory cell land a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein

said first memory cell includes:

a pair of first driver transistors forming a part of a first flip-flop;

a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors;

first supply potential applying means connected to each of said first load transistors for applying a supply potential;

first ground potential applying means connected to each of said first driver transistors for applying a ground potential;

a first access transistor connected to a connection portion between one of said first driver transistors and one of said first load transistors; and

a first word line connected to a gate electrode of said first access transistor;

said second memory cell includes;

a pair of second driver transistors forming a part of a second flip-flop;

a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors;

second supply potential applying means connected to each of said second load transistors for applying a supply potential;

second ground potential applying means connected to each of said second driver transistors for applying a ground potential;

a second access transistor connected to a connection portion between one of said second driver transistors and one of said second load transistors;

a second word line connected to a gate electrode of said second access transistors; and

wherein

said first and second memory cells each have only a single access transistor,

each of said first and second access transistors are connected to a common bit line, said first and second driver transistors and said second access transistor are of a first conductivity type, and said first and second load transistors and said first access transistor are of a second conductivity type opposite to said first conductivity type.

13. A semiconductor memory device according to claim 12, wherein

said transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and

said transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween.

14. A static semiconductor memory device including a first memory cell and a second memory cell neighboring to said first memory cell, each utilizing transistors which form a flip-flop, for storing information, wherein

said first memory cell includes:

a pair of first driver transistors forming a part of a first flip-flop;

a pair of first load transistors forming another part of said first flip-flop and each being connected to each of said first driver transistors;

first supply potential applying means connected to each of said first load transistors for applying a supply potential;

first ground potential applying means connected to each of said first driver transistors for applying a ground potential;

a first access transistor connected to a connection portion between one of said first driver transistors and one of said first load transistors; and

a first word line connected to a gate electrode of said first access transistor;

said second memory cell includes;

a pair of second driver transistors forming a part of a second flip-flop;

a pair of second load transistors forming another part of said second flip-flop and each being connected to each of said second driver transistors;

second supply potential applying means connected to each of said second load transistors for applying a supply potential;

second ground potential applying means connected to each of said second driver transistors for applying a ground potential;

a second access transistor connected to a connection portion between one of said second driver transistors and one of said second load transistors;

a second word line connected to a gate electrode of said second access transistors;

wherein

each of said first and second access transistors are connected to a common bit line, said first and second driver transistors and said second access transistor are of a first conductivity type, and said first and second load transistors and said first access transistor are of a second conductivity type opposite to said first conductivity type,

said transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and

said transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween, and

said first access transistor is located above said second access transistor.

15. A memory cell structure of a semiconductor memory device using transistors which form a flip-flop, for storing information, said memory cell structure comprising:

a pair of driver transistors forming a part of said flip-flop; and

a pair of load transistors forming another part of said flip-flop and each being connected to each of said driver transistors,

said memory cell structure having only a single transfer gate formed of a transistor of a first conductivity type and a second transistor of a second conductivity type opposite to said first conductivity type, and being connected to a connection portion between one of said driver transistors and one of said load transistors for transferring the potential of said connection portion to a bit line, wherein

said driver transistors are of said first conductivity type, and said load transistors are of said second conductivity type, and wherein

the transistors of said first conductivity type are formed in a first layer in a semiconductor substrate, and

the transistors of said second conductivity type are formed in a second layer which is formed on said first layer with an insulating layer therebetween.

16. A memory cell structure according to claim 15, further comprising:

supply potential applying means connected to each of said load transistors for applying a supply potential; and

ground potential applying means connected to each of said driver transistors for applying a ground potential.

17. A memory cell structure according to claim 15, wherein

the transfer gate transistor of said first conductivity type has a gate electrode connected to a word line;

and

the transfer gate transistor of said second conductivity type has a gate electrode connected to another word line.

18. A memory cell structure according to claim 15, wherein

said load transistors are located above said driver transistors, and the transistors of said second conductivity type are located above the transistors of said first conductivity type;

and

the second transistor of a second conductivity type of the transfer gate is located above the transistor of a first conductivity type of the transfer gate.

19. A photo sensor formed of a first element unit and a second element unit neighboring to said first element unit, wherein

said first element unit includes:

a first CCD and a first access transistor which are formed in a first layer and are connected to each other;

a first photo detector formed in a second layer; and

a first contact connecting said access transistor to said first photo detector; and

said second element unit includes;

a second CCD formed in said first layer;

a second photo detector and a second access transistor which are formed in said second layer and are connected to each other; and

a second contact connecting said second CCD to said second access transistor.

20. A semiconductor device of a static RAM comprising:

a first memory cell including

a pair of load transistors,

a pair of driver transistors, and

a pair of access transistors; and

a second memory cell neighboring to said first memory cell including

a pair of load transistors,

a pair of driver transistors, and

a pair of access transistors, wherein

two pairs of transistors of said first memory cell are formed in a first layer,

a pair of transistors of said first memory cell is formed in a second layer above said first layer,

a pair of transistors of said second memory cell is formed in said first layer, and

two pairs of transistors of said second memory cell are formed in said second layer, wherein

said pair of load transistors of said first memory cell are formed in said second layer directly over said pair of driver transistors of said first memory cell formed in said first layer,

said pair of load transistors of said second memory cell are formed in said second layer directly over said pair of driver transistors of said second memory cell formed in said first layer, and

said pair of access transistors of said first memory cell are formed in said first layer and said pair of access transistors of said second memory cell are formed in said second layer with at least a portion of said pair of access transistors of said second memory cell directly over said pair of access transistors of said first memory cell.