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Semiconductor devices fabricated with passivated high aluminum-content III-V material

  • US 5,517,039 A
  • Filed: 11/14/1994
  • Issued: 05/14/1996
  • Est. Priority Date: 11/14/1994
  • Status: Expired due to Fees
First Claim
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1. A passivated confined emission light emitting diode comprising:

  • a substrate comprised of a semiconductor material;

    a P-N junction active region proximate to the substrate;

    a current confinement layer proximate to the active region for restricting current flow through the active region;

    an exposed Al-bearing semiconductor material layer forming a current spreading window over the current confinement layer and the active region; and

    a native oxide layer formed on the exposed Al-bearing semiconductor material layer, the native oxide layer having a thickness of at least 0.1 micrometers and less than 7.0 micrometers, the native oxide layer passivating the light emitting diode by covering the exposed Al-bearing semiconductor material layer in those areas wherethrough a majority of the light generated by the diode is transmitted.

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