Semiconductor devices fabricated with passivated high aluminum-content III-V material

• US 5,517,039 A
• Filed: 11/14/1994
• Issued: 05/14/1996
• Est. Priority Date: 11/14/1994
• Status: Expired due to Fees

• Current Assignee: Board of Trustees of The University of Illinois, Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Rudaz, Serge, Keever, Mark R., Richard, Tim A., Holonyak, Nick Jr., Kish, Fred A., Lei, Chun
• Primary Examiner(s): MINTEL, WILLIAM A
• Application Number:
  US08/339,034
• Time in Patent Office: 547 Days
• Field of Search: 257/94, 257/95, 257/96, 257/97, 257/98, 257/631, 372/49, 372/45, 372/46
• US Class Current: 257/94
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

LEDs and other semiconductor devices fabricated with III-V materials and having exposed Al-bearing surfaces passivated with native oxides are disclosed. A known high temperature water vapor oxidation process is used to passivate the exposed layers of Al-bearing III-V semiconductor materials in confined-emission spot LEDs and other light emitting devices. These devices exhibit greatly improved wet, high temperature operating life, with little to no degradation in light output when exposed to such conditions.

Claims

1. A passivated confined emission light emitting diode comprising:

a substrate comprised of a semiconductor material;

a P-N junction active region proximate to the substrate;

a current confinement layer proximate to the active region for restricting current flow through the active region;

an exposed Al-bearing semiconductor material layer forming a current spreading window over the current confinement layer and the active region; and

a native oxide layer formed on the exposed Al-bearing semiconductor material layer, the native oxide layer having a thickness of at least 0.1 micrometers and less than 7.0 micrometers, the native oxide layer passivating the light emitting diode by covering the exposed Al-bearing semiconductor material layer in those areas wherethrough a majority of the light generated by the diode is transmitted.

2. The passivated confined emission light emitting diode of claim 1 wherein the native oxide layer is thicker where formed on an exposed Al-bearing semiconductor material layer having a first level of stress in its crystal structure than where formed on a second, exposed Al-bearing semiconductor material layer having a second, lower level of stress in its crystal structure.

3. The passivated confined emission light emitting diode of claim 1 wherein the thickness of the native oxide layer is determined by a predetermined stress level between a metal contact layer and the current spreading window, the metal contact layer formed on the current spreading window.

4. The passivated confined emission light emitting diode of claim 1 wherein the thickness of the native oxide layer is determined by the Al mole fraction in the exposed Al-bearing semiconductor material layer.

5. The passivated confined emission light emitting diode of claim 1 wherein the thickness of the native oxide layer is determined by the doping concentration in the exposed Al-bearing semiconductor material layer.

6. The passivated confined emission light emitting diode of claim 1 wherein the thickness of the native oxide layer is determined by the doping type in the exposed Al-bearing semiconductor material layer.

7. A semiconductor light emitting diode comprising:

a substrate region;

a P-N junction active region proximate to the substrate region;

at least a first current spreading window layer proximate to the P-N junction active region;

at least a first exposed Al-bearing III-V semiconductor layer; and

at least a first native oxide region overlying the exposed Al-bearing III-V semiconductor layer and at least 0.1 micrometers thick and no more than 7.0 micrometers thick, the native oxide region passivating the semiconductor light emitting diode by covering the exposed Al-bearing III-V semiconductor layer in those areas wherethrough a majority of the photon flux generated by the semiconductor light emitting diode is transmitted.

8. The semiconductor light emitting diode of claim 7 wherein the at least first exposed Al-bearing III-V semiconductor layer further comprises a plurality of exposed Al-bearing III-V semiconductor layers wherein the exposed Al-bearing III-V semiconductor layers each have different doping levels and types, the at least a first native oxide region further comprising a plurality of native oxide regions overlying the plurality of exposed Al-bearing III-V semiconductor layers, the native oxide regions varying in thickness as the doping levels change from p+ to p- and n- doping levels to n+ doping levels.

9. The semiconductor light emitting diode of claim 7 further comprising a plurality of exposed Al-bearing III-V semiconductor layers wherein the Al-bearing III-V semiconductor layers each have a predetermined level of stress, the native oxide regions varying in thickness in proportion to the predetermined stress level in the plurality of exposed Al-bearing III-V semiconductor layers.

10. The semiconductor light emitting diode of claim 7 further comprising a plurality of exposed Al-bearing III-V semiconductor layers wherein the Al-bearing III-V semiconductor layers have predetermined mole fractions of Al, the native oxide regions varying in thickness in proportion to the mole fraction of Al in the Al-bearing III-V semiconductor layers.

11. The semiconductor light emitting diode of claim 7 further comprising a plurality of exposed Al-bearing III-V semiconductor layers wherein the exposed Al-bearing III-V semiconductor layers have different doping types, the native oxide region varying in thickness in relation to the doping types of the exposed Al-bearing III-V semiconductor layers.

12. The semiconductor light emitting diode of claim 7 wherein the current spreading window and the first exposed Al-bearing III-V semiconductor layer comprise the same layer.

13. The semiconductor light emitting diode of claim 7 wherein the substrate comprises an Al-bearing semiconductor material.

14. The semiconductor light emitting diode of claim 7 wherein the current spreading window layer comprises an Al-bearing semiconductor material.

15. A confined emission light emitting diode comprising:

a semiconductor substrate;

an active region proximate to the substrate;

an Al-bearing layer proximate to the active region;

a conductive window proximate to the Al-bearing layer; and

native oxide spikes, the native oxide spikes extending laterally from at least 50 microns up to 500 microns into the Al-bearing layer, the native oxide spikes limiting current flow through the active region.

16. The confined emission light emitting diode of claim 15 wherein the lateral length of the native oxide spikes is determined by the Al mole fraction in the Al-bearing layer.

17. The confined emission light emitting diode of claim 15 wherein the lateral length of the native oxide spikes is determined by the levels of compressive and tensile stress within the crystal structure of the Al-bearing layer.

18. The confined emission light emitting diode of claim 15 wherein the lateral length of the native oxide spikes is determined by the doping level and doping type of the Al-bearing layer.

19. The confined emission light emitting diode of claim 15 wherein the conductive window comprises an Al-bearing semiconductor material, a native oxide layer being formed on the conductive window simultaneously with the native oxide spikes.

20. The confined emission light emitting diode of claim 15 wherein the Al-bearing layer is substantially transparent to wavelengths of light generated by the light emitting diode.